Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
DA227Y
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Ultra small mold type. (EMD4)
2) High reliability.
Structure
Construction
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW/Total
Tj °C
Tstg °C
f MHz
(*1) Pd=120mW when only 1 circuit is operating.
CONDITION = Each terminal mounted on a recommended land pattern. (0.35x0.9mm)
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50
Capacitance between terminals
Reverse recovery time
ConditionsParameter
Forward voltage
Reverse current
Storage temperature 55 to 150
Rated in slash put frequency 100
Power dissipation (*1) 150
Junction temperature 150
Average rectified forward current (Single) 100
Surge current (t=1us) (Single) 4
Reverse voltage (DC) 80
Forward current (Single) 300
Parameter Limits
Reverse voltage (repetitive peak) 80
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
0.13±0.05
0.5±0.05
0～0.1
(1) (2)
(4) (3)
0.5
0.5
1.0±0.1
0.22±0.05
1.6±0.1
1.2±0.1
1.6±0.1
1.65±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
　　　　　 0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.8±0.1
5.5±0.2
1.65±0.1
0.65±0.1
0.3±0.1
0～0.1
1PIN
1.65±0.01
1.7±0.05
0.5
0.45
1.0
1.55
EMD4
1/2 2011.06 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DA227Y 　
0
5
10
15
20
AVE:3.50A
8.3ms
Ifsm 1cyc
0
1
2
3
4
5
6
7
8
9
10
AVE:1.93ns
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 100
0
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
0.1
1
10
0 5 10 15 20
f=1MHz
900
910
920
930
940
950
AVE:921.7mV
Ta=25℃
IF=100mA
n=30pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=80V
n=10pcs
AVE:9.655nA
0
1
2
3
4
5
110100
8.3ms
Ifsm
1cyc
8.3ms
1
10
100
0.1 1 10 100
t
Ifsm
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
0
1
2
3
4
5
6
7
8
9
10
AVE:0.97kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:2.54kV
0
1
2
3
4
5
6
7
8
9
10
AVE:1.17pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
2/2 2011.06 - Rev.A
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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Notes