1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suit able for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Medium power, high linearity, high breakdown voltag e RF transistor
AEC-Q101 qualified
Maximum stable gain 13 dB at 900 MHz
PL(1dB) 21.5 dBm at 900 MHz
8.5 GHz fT silicon technology
1.3 Applications
Automotive applications
Broadband amplifiers
Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
Large signal amplifiers for ISM applications
1.4 Quick reference data
BFU590G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014 Product data sheet
627
Table 1. Quick reference data
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
VCB collector-base voltage open emitter - - 24 V
VCE collector-emitter voltage open base - - 12 V
shorted base - - 24 V
VEB emitter-base voltage open collector - - 2 V
ICcollector current - 80 200 mA
Ptot total power dissipation Tsp 90 C[1] - - 2000 mW
hFE DC current gain IC=80mA; V
CE =8V 60 95 130
Cccollector c a pacitance VCB =8V; f=1MHz - 1.9 - pF
fTtransition frequency IC=80mA; V
CE = 8 V; f = 900 MHz - 8.5 - GHz
BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 2 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
[1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) =MSG.
2. Pinning information
3. Ordering information
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU580G and BFU590G samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
Gp(max) maximum power gain IC=80mA; V
CE = 8 V; f = 900 MHz [2] -13- dB
PL(1dB) output power at 1 dB gain
compression IC=80mA; V
CE =8V; Z
S=Z
L=50;
f=900MHz - 21.5 - dBm
Table 1. Quick reference data …continued
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector
PEE
Table 3. Ordering informatio n
Type number Package
Name Description Version
BFU590G - plastic surface-mounted package with increased heatsink; 4 leads SOT223
OM7966 - Customer evaluation kit for BFU580G and BFU590G [1] -
Table 4. Marking
Type number Marking
BFU590G BFU590
BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 3 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
5. Design support
6. Limiting values
7. Recommended operating conditions
[1] Tsp is the temperature at the solder point of the collector lead.
Table 5. Available design sup po rt
Download from the BFU590G product information page on http://www.nxp.com.
Support item Available Remarks
Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.
SPICE model yes Based on Gummel-Poon device
model.
S-parameters yes
Customer evaluation kit yes See Section 3 and Section 10.
Solder pattern yes
Application notes yes See Section 10.1 and Section 10.2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCB collector-base voltage open emitter - 30 V
VCE collector-emitter voltage open base - 16 V
shorted base - 30 V
VEB emitter-base voltage open collector - 3 V
ICcollector current -300mA
Tstg storage temperature 65 +150 C
VESD electrostatic discharge voltage Human Body Model (HBM) According to JEDEC
standard 22-A114E -250 V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B - 2kV
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB collector-base voltage open emitter - - 24 V
VCE collector-emitter voltage open base - - 12 V
shorted base - - 24 V
VEB emitter-base voltage open collector - - 2 V
ICcollector current - - 200 mA
Piinput power ZS= 50 --20dBm
Tjjunction temperature 40 - +150 C
Ptot total power dissipation Tsp 90 C[1] --2000mW
BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 4 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
8. Thermal characteristics
[1] Tsp is the temperature at the solder point of the collector lead.
Tsp has the following relation to the ambient temperature Tamb:
Tsp =T
amb +PRth(sp-a)
With P being the power dissipation and Rth(sp-a) being the thermal resistance between the solder point and
ambient. Rth(sp-a) is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
9. Characteristics
Table 8. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to solder point [1] 30 K/W
Fig 1. Power derating curve
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Table 9. Characteristics
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base breakdown voltage IC= 100 nA; IE=0mA 24 - - V
V(BR)CEO collector-emitter breakdown voltage IC= 150 nA; IB=0mA 12 - - V
ICcollector current - 80 200 mA
ICBO collector-base cut-off current IE=0mA; V
CB =8V - <1 - nA
hFE DC current gain IC=80mA; V
CE = 8 V 60 95 130
Ceemitter capacitance VEB = 0.5 V; f = 1 MHz - 3.9 - pF
Cre feedback capacitance VCE = 8 V; f = 1 MHz - 1.1 - pF
Cccollector capacitance VCB = 8 V; f = 1 MHz - 1.9 - pF
fTtransition frequency IC=50mA; V
CE = 8 V; f = 900 MHz - 8.5 - GHz
BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 5 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
Gp(max) maximum power gain f = 433 MHz; VCE =8V [1]
IC= 10 mA - 18.5 - dB
IC= 50 mA - 19.5 - dB
IC= 80 mA - 19.5 - dB
f = 900 MHz; VCE =8V [1]
IC= 10 mA - 13.5 - dB
IC=50mA - 13 - dB
IC=80mA - 13 - dB
f = 1800 MHz; VCE =8V [1]
IC=10mA - 8 - dB
IC=50mA - 8 - dB
IC=80mA - 8 - dB
s212insertion power gain f = 433 MHz; VCE =8V
IC=10mA - 16 - dB
IC= 50 mA - 17.5 - dB
IC= 80 mA - 17.5 - dB
f = 900 MHz; VCE =8V
IC=10mA - 10 - dB
IC=50mA - 11 - dB
IC=80mA - 11 - dB
f = 1800 MHz; VCE =8V
IC= 10 mA - 4.5 - dB
IC= 50 mA - 5.5 - dB
IC= 80 mA - 5.5 - dB
PL(1dB) output power at 1 dB gain compression f = 433 MHz; VCE =8V; Z
S=Z
L=50
IC=50mA - 20 - dBm
IC= 80 mA - 22.5 - dBm
f = 900 MHz; VCE =8V; Z
S=Z
L=50
IC= 50 mA - 19.5 - dBm
IC= 80 mA - 21.5 - dBm
f = 1800 MHz; VCE =8V; Z
S=Z
L=50
IC= 50 mA - 18.5 - dBm
IC=80mA - 21 - dBm
Table 9. Characteristics …continued
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 6 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
[1] If K > 1 then Gp(max) is the maximum power gain. If K 1 then Gp(max) =MSG.
9.1 Graphs
IP3ooutput third-order intercept point f1= 433 MHz; f2= 434 MHz; VCE =8V;
ZS=Z
L=50
IC= 50 mA - 29.5 - dBm
IC=80mA - 32 - dBm
f1= 900 MHz; f2= 901 MHz; VCE =8V;
ZS=Z
L=50
IC=50mA - 29 - dBm
IC=80mA - 31 - dBm
f1= 1800 MHz; f2=1801MHz;
VCE =8V; Z
S=Z
L=50
IC=50mA - 28 - dBm
IC= 80 mA - 30.5 - dBm
Table 9. Characteristics …continued
Tamb =25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Tamb =25C.
(1) IB=25A
(2) IB=75A
(3) IB= 125 A
(4) IB= 175 A
(5) IB= 225 A
(6) IB= 275 A
(7) IB= 325 A
Fig 2. Collec tor current as a function of collector-emitte r voltage; typical values
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 7 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
Tamb =25C.
(1) VCE =3.0V
(2) VCE =8.0V
VCE =8V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +125 C
Fig 3. DC current gain as a function of collector
current; typical values Fig 4. DC current gain as a function of collector
current; typical values
Tamb =25C.
(1) VCE =3.0V
(2) VCE =8.0V
Tamb =25C.
(1) VCE =3.0V
(2) VCE =8.0V
Fig 5. Collector current as a funct ion of base-emitter
voltage; typical values Fig 6. Base cu rrent as a function of base-emitter
voltage; typical values
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 8 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
VCE =3V.
(1) Tamb = 40 C
(2) Tamb = +25 C
(3) Tamb = +125 C
IC = 0 mA; f = 1 MHz; Tamb =25C.
Fig 7. Revers e base current as a function of
emitter-base voltage; typical values Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
Tamb =25C.
(1) VCE =3.3V
(2) VCE =5.0V
(3) VCE =8.0V
(4) VCE = 12.0 V
Fig 9. T ransition frequency as a function of collector current; typical values
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 9 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
IC=50 mA; V
CE =8V; T
amb =25C. IC=80mA; V
CE =8V; T
amb =25C.
Fig 10. Gain as a function of frequency; typical valu es Fig 11. Gain as a function of frequency; typ ic al valu es
VCE =8V; T
amb =25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
VCE =8V; T
amb =25C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertio n po we r ga in as a function of collector
current; typical values Fig 13. Maximum power gai n as a function of co llector
current; typical values
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 10 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
IC=50 mA; T
amb =25C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
IC=80mA; T
amb =25C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 14. Insertio n po we r ga in as a function of
collector -em itter voltage; typica l va lues Fig 15. Maximum power gain as a func tion of
collector-emitter voltage; typical values
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 11 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC= 50 mA
(2) IC= 80 mA
Fig 16. Input reflectio n co efficient (s11); typical values
VCE = 8 V; 40 MHz f 3 GHz.
(1) IC= 50 mA
(2) IC= 80 mA
Fig 17. Output reflection coefficient (s22); typical values
DDD
DDD
BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 12 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
VCE =8V; T
amb =25C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
VCE =8V; T
amb =25C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 18. Output third-order interc ept point as a function
of collector current; typical values Fig 19. Output power at 1 dB gain compression as a
function of collector current; typical values
IC= 80 mA; Tamb =25C.
(1) f1 = 433 MHz; f2 = 434 MHz
(2) f1 = 900 MHz; f2 = 901 MHz
(3) f1 = 1800 MHz; f2 = 1801 MHz
IC=80 mA; T
amb =25C.
(1) f = 433 MHz
(2) f = 900 MHz
(3) f = 1800 MHz
Fig 20. Output third-order interc ept point as a function
of collector-emitter voltage; typical values Fig 21. Output power at 1 dB gain compression as a
function of collector-emitter voltage;
typical values
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 13 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 “Design support”.
The following application example can be imple mented using the evaluation kit. See
Section 3 “Ordering information” for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 “Design support”.
10.1 Application example: 433 MHz PA
More detailed information of the application example can be found in the application note:
AN11503.
Remark: fine tuning of components maybe required depending on PCB parasitics.
Fig 22. Schematic 433 MHz powe r amplifier
Table 10. Application performan ce data at 433 MHz
ICC = 100 mA; VCC = 8 V
Symbol Parameter Conditions Min Typ Max Unit
s212insertion power gain - 15 - dB
s112input return loss - 7- dB
PL(1dB) output power at 1 dB gain compression - 26 - dBm
Ccollector efficiency - 60 - %
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 14 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
10.2 Application example: 866 MHz PA
More detailed information of the application example can be found in the application note:
AN11501.
Remark: fine tuning of components maybe required depending on PCB parasitics.
Fig 23. Schematic 866 MHz powe r amplifier
Table 11. Application performance data at 866 MHz
ICC = 100 mA; VCC = 8 V
Symbol Parameter Conditions Min Typ Max Unit
s212insertion power gain - 10 - dB
s112input return loss - 12 - dB
PL(1dB) output power at 1 dB gain compression - 27 - dBm
Ccollector efficiency - 55 - %
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 15 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
11. Package outline
Fig 24. Package outline SOT223
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BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 16 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
12. Handling information
13. Abbreviations
14. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 12. Abbreviations
Acronym Description
AEC Automotive Electronics Council
ISM Industrial, Scientific and Medical
LNA Low-Noise Amplifier
MSG Maximum Stable Gain
NPN Negative-Positive-Negative
PA Power Amplifier
SMA SubMiniature version A
Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU590G v.1 20140428 Product data sheet - -
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Product data sheet Rev. 1 — 28 April 2014 17 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
15. Legal information
15.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
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Limited warr a nty and liability — Information in this document is believed to
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Notwithstanding any damages that customer might incur for any reason
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
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accepts no liability for any assistance with applications or customer product
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors her eby exp r essly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BFU590G All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 28 April 2014 18 of 19
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a pri or
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BFU590G
NPN wideband silicon RF transistor
© NXP Semiconductors N.V. 2014 . All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 April 2014
Document identifier: BFU59 0G
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
17. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Design support . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Recommended operating conditions. . . . . . . . 3
8 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
9 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
9.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Application information. . . . . . . . . . . . . . . . . . 13
10.1 Application example: 433 MHz PA . . . . . . . . . 13
10.2 Application example: 866 MHz PA . . . . . . . . . 14
11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
12 Handling information. . . . . . . . . . . . . . . . . . . . 16
13 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
15.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
15.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
15.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
16 Contact information. . . . . . . . . . . . . . . . . . . . . 18
17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
