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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
FRFET
TM
FQPF5N50CF
500V N-Channel MOSFET
Features
• 5A, 500V, R
DS(on)
= 1.55 Ω @V
GS
= 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect t ransis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced tec hnology has been es pecially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Charac t eris tics
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S
D
G
TO-220F
FQPF Series
GS
D
Symbol Parameter FQPF5N50CF Units
V
DSS
Drain-Source Voltage 500 V
I
D
Drain Current - Continuous (T
C
= 25°C) 5 A
- Continuous (T
C
= 100°C) 2.9 A
I
DM
Drain Current - Pulsed
(Note 1)
20 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
300 mJ
I
AR
Avalanche Current
(Note 1)
5A
E
AR
Repetitive Avalanche Ene rgy
(Note 1)
7.3 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C) 38 W
- Derate above 25°C 0.3 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FQPF5N50CF Units
R
θJC
Thermal Resistance, Junction-to-Case 3.31 °C/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 21.5 mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 5A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking Device Package Reel Size Tape Width Quantity
FQPF5N50CF FQPF5N50CF TO-220F - -
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA 500 -- -- V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature Coef-
ficient I
D
= 250 µA, Referenced to 25°C -- 0.5 -- V/°C
I
DSS
Zero Gate V oltage Drain Current V
DS
= 500 V, V
GS
= 0 V -- -- 1 µA
V
DS
= 400 V, T
C
= 125°C -- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA2.0--4.0V
R
DS(on)
Static Drain-Source
On-Resistance V
GS
= 10 V, I
D
= 2.5A -- 1.3 1.55 Ω
g
FS
Forward Trans conductance V
DS
= 40 V, I
D
= 2.5A
(Note 4)
-- 5.2 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 480 625 pF
C
oss
Output Capacitance -- 80 105 pF
C
rss
Reverse Transfer Capacitance - - 15 20 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 250 V, I
D
= 5A,
R
G
= 25 Ω
(Note 4, 5)
-- 12 35 ns
t
r
Turn-On Rise Time -- 46 100 ns
t
d(off)
Turn-Off Delay Time -- 50 110 ns
t
f
Turn-Off Fall Time -- 48 105 ns
Q
g
Total Gate Charge V
DS
= 400 V, I
D
= 5A,
V
GS
= 10 V
(Note 4, 5)
-- 18 24 nC
Q
gs
Gate-Source Charge -- 2.2 -- nC
Q
gd
Gate-Drain Charge -- 9.7 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 20 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 5 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 5 A,
dI
F
/ dt = 100 A/µs
(Note 4)
-- 65 -- ns
Q
rr
Reverse Recovery Charge -- 0.11 -- µC
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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
Typical Pe rformance Characte rist ics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
246810
10
-1
10
0
10
1
150
°
C
25
°
C
-55
°
C
Note s :
1. V
DS
= 40V
2. 250
µ
s Pulse Test
I
D
, Drain Current [A ]
V
GS
, Gate-S our c e V o l ta g e [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bo ttom : 5.0 V
No tes :
1. 25 0
µ
s Pulse Te st
2. T
C
= 25
°
C
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
051015
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
= 20V
V
GS
= 10V
No te : T
J
= 25
°
C
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.20.40.60.81.01.21.4
10
-1
10
0
10
1
150?
Note s :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
25?
IDR, Reverse Drain Current [A]
VSD, Source -Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacit ance [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100 V
V
DS
= 40 0V
Note : I
D
= 5A
V
GS
, Gate-Source Voltage [V]
Q
G
, To ta l Gate Ch a rg e [nC ]
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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
Typical Pe rformance Characte rist ics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs
Case Temperature
Figure 10. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
µ
A
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Tem perature [
°
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 2.5 A
R
DS(ON)
, (Normali zed)
Drain-Sour ce On-Resistance
T
J
, Junction Temperature [
°
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
µ
s
100 ms
DC
10 ms 1 ms 100
µ
s
Operation in This Area
is Limited by R
DS(on)
No te s :
1. T
C
= 25°C
2. T
J
= 150°C
3. S ing le P u lse
I
D
, Drain Current [A]
V
DS
, Drain-Source Vo ltage [V]
25 50 75 100 125 150
0
1
2
3
4
5
6
I
D
, Drain Current [A]
T
C
, Case Temperature [
°
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
No te s :
1 . Z
θ
JC
(t) = 3 .3 1
°
C/W M ax.
2 . D u t y Fa c to r , D= t
1
/t
2
3 . T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
JC
(t), Thermal Response
t
1
, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Wavef orms
Charge
V
GS
10V Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
10V Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS2
----
2
1
E
AS
=LI
AS2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controll ed by pul se peri od
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Per i o d
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
• dv/dt controlled by R
G
•I
SD
controll ed by pul se peri od
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Per i o d
--------------------------
D = Gate Pulse Width
Gate Pulse Per i o d
--------------------------
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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
Mechanical Dimens ions
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
8
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FQPF5N50CF Rev. B
FQPF5N50CF 500V N-Channel MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identificatio n Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinue d by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Rev. I15
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