OPTEK TECHNOLOGY INC ObE D B ersasao dooo31e a i Optoslactronics Division Tv Wy | _ a aaa TRW Electronic Components Group 7 ) 3 a a vy Product Bulletin 5284 January 1985 Reflective Object Sensor Type OPB703A 34S 18.76} git 10.41) 1325 (8.26) | ae (0.01) ed a tan RNOM - SS . - d a0 FG mae +X - Ty. aa 0 w . 130 (338) ina) (ay ~| ROTOR 150 13.81) nH DOT INDICATES nestonse i gett oy eaTine LEAD, omnen LEADS ARE .060 (1.52) igtnsay so "om po aee Cae (k) = caTHaDE 2185.33) [ t ' tA) ANGDE aie - ! 4 ARE IN (NCHES (MILLIMETERS) Features ; Absolute Maximum Ratings (Ta = 25C untess otharwise notad) Phototransistor output Storage Tamporatura Ranga 0.0... .. cc cece cece cence ec ee tee eee eteneebeeteeuas -40C to +85C High sensitivity Operating Tamperatura Range............ 00. cece eect e rece ee eee te tenons -40 to +85 Low cost plastic housing Lead Soldaring Temperature (1/16 in. [1.6 mm] from case for sec, with soldering ironf........... 240C Lensed for dust.protection and ambient light Input Diode filtration Forward DC Current............... Deedee eee ene ene eet net eee a teeta een FEE ner EeE 40 mA . Reverse DC Voltage ....... 2. eee cece eee tee reece eee eb entre ee eeetetereeenets 2.0 Descripticn Power Dissipation 2.0.0.2... 0. cece cece eee ence eee cae eeteceeenenebeaneernees 70 mwa The OPB703A consists of an infrared emitting Output Photosensor code and an NPN silicon phototransistor mounted Collector-Emitter Voltage .............ccecececceneseeneeeeeaeasssepeseesteeeetaenes 30V side-by-side on converging optical axes, in a black Emitter-Collector Voltage ............cccccecseeeeeeeccaeseueeaeeteeeseeeneeecaeeenenas 5.0V plastic housing, A filtering lens in the face of the Power Dissipation ...........cccccecescesseeceeseeeeeeteeeseeeeeteeessateneseaes 60 mw housing seals the device from dust and dirt and Notes: reduces ambient light noise. The photosensor (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. responds to radiati {2} Derate linearly 1.27 mW/C above 25C. 0 radiation from the LED only when a (3) Derate linearly 0.91 mWPC above 26C. reflective object passes within its fisld of view. {4} d is the distance fram the assembly face to the reflective surface, OPB703A utilizes an OP160 or OP260 LED and an _(5) Measured using an Eastman Kodak neutral white test card having 90% diffuse raffectance as 9 raflecting surface. OP500 family sensor. (8) Measured using a reflecting surfaca that has a very black dull curface with optical reflectance qualities comparable to 8 . surfaca coated with carben black printer's ink. (7) Lower curve is based on a calculated worst casa condition rather then the conventional ~2o limit. eg es RP PE SA Ea Optoelectronics Division, TRW Electronic Components Group, 1215 W. Crosby Rd., Carrollton, TX 75006 (214) 323-2200, TLX 6716032 or 215848 218 OPTEK TECHNOLOGY INC ObE D Bj ersssac coo0313 1 i Type OPB703A T-41-93 Electrical Characteristics (Ta ~ 25C unless otherwise noted) pevonemeiia eam tt [ Symbai_ | Parameter 7 Min. | Max. | Units | Test Conditions | - Input Diods VE Forward Voltage 1.70 v \p= 40 mA lp Reversa Currant 100 pA Vp = 2.0 V Output Phototransistor Viericeo _ | Callector-Emitter Breakdown Voltage 30 v Ice = 100 2A Verieco | Emitter-Collector Breakdown Voltage 5.0 v lee = 100 xA {ceo Collector Dark Current 100 nA Veg = 10.0 V, p= 0, Ey = 0 Combined IciON) On-State Collector Current 200 pA p= 40 mA, Veg = 6.0 V, d= 0.20 in. 15.08 mmbHs), VceISat) | Collector-Emitter Saturation Voltage 0.40 Vv Ip = 40 mA, te = 100 pA, d= 0.20 in, (6.00 mmpttet Typical Performance Curves Reflective Surface Collector Current vs. Diode Forward Current Diffused Surface Collector Current vs. Diode Forward Current Normalized Collector Current vs, Ambient Temperature 16 100 16 E t z 1 1 1 10 12 & = = 2 @ S 3 3 a & @1 = 18 a 4s o o o 5 5 3 3 3 q & as 8 a z oa ipa Oma 4 Woe =5 4 Voe=6V z Vee #5 V = 20.20 in, (5.08 mm) 2 = 0.20 fn. (5.08 mm) 3 6*0.20in, (5.08 mm) (See Nota 5) (See Note 5) (See Note 5) O60 ent Q 8 15 26 30 4 i) 8 18 20 EL] 4a oe -60 -48 -26 6 2 64006 6@ O80 Ig DIODE FORWARD CURRENT mA Ig DIODE FORWARD CURRERT mA Ta - AMBIENT TEMPERATURE C Normalized Collector Current Rise and Fall Time vs. Test Condition vs. Object Distance Load Resistance 18 1008 REFLECTING SURFACE Ip = 48 mA ote z Moe =5 a vor"s Z + Pe (Sea Nate 5} ' ce 12 2 7 . o e@aoo +20 = 190 wr] a e wi 4 os 757 = ye" = a 3 : Zn 8 2 10 i gu = st 3 3 ww z ' 1.8 02 as as 10 1K tax took wy ( a) d DISTANCE TO REFLECTIVE SURFACE tnches BL ~ LOAD RESISTANCE $2 LED PHOTOTRANSISTOR TRW reserves the right to make changes at any time in ofder to improve design and to supply the best product possible. Optoelectronics Division, TRW Electronic Components Group, 1215 W. Crosby Ad., Carrollton, TX 75008 (214) 929-2200, TLX 6716032 or 216849 @TAW Ine. 1985, 1982. TAW is the nama and mark of TRW Inc. . Printed in U.S.A. 207