FDMS003N08C N-Channel Shielded Gate PowerTrench(R) MOSFET 80 V, 147 A, 3.1 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench(R) process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 56 A Max rDS(on) = 8.1 m at VGS = 6 V, ID = 28 A 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI Applications MSL1 robust package design 100% UIL tested Primary DC-DC MOSFET RoHS Compliant Synchronous Rectifier in DC-DC and AC-DC Motor Drive Solar Bottom Top S Pin 1 D D D S S Pin 1 S D G S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TC = 25 C -Continuous TC = 100 C -Continuous TA = 25 C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG Power Dissipation TC = 25 C Power Dissipation TA = 25 C Ratings 80 Units V 20 V (Note 5) 147 (Note 5) 92 (Note 1a) 22 (Note 4) 658 (Note 3) 486 125 (Note 1a) Operating and Storage Junction Temperature Range 2.7 -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient 1 (Note 1a) 45 C/W Package Marking and Ordering Information Device Marking FDMS003N08C Device FDMS003N08C Package Power 56 Semiconductor Components Industries, LLC, 2017 May, 2017, Rev. 1.0 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMS003N08C/D 1 FDMS003N08C N-Channel Shielded Gate PowerTrench(R) MOSFET www.onsemi.com Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 4.0 V 80 V 60 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 310 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 310 A, referenced to 25 C VGS = 10 V, ID = 56 A 2.6 3.1 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 28 A 3.8 8.1 VGS = 10 V, ID = 56 A, TJ = 125 C 4.3 5.2 VDS = 5 V, ID = 56 A 123 gFS Forward Transconductance 2.0 2.9 -8.2 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 40 V, VGS = 0 V, f = 1 MHz 0.1 3820 5350 1335 1870 pF pF 44 80 pF 0.6 1.3 20 36 ns 8 16 ns 40 64 ns 12 23 ns 52 73 nC 33 46 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VDD = 40 V, ID = 56 A, VGS = 10 V, RGEN = 6 Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 6 V Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge Qoss Output Charge VDD = 40 V, VGS = 0 V 77 nC Qsync Total Gate Charge Sync VDS = 0 V, ID = 56 A 44 nC VDD = 40 V, ID = 56 A nC 17 nC 10 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.2 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 56 A (Note 2) 0.8 1.3 IF = 28 A, di/dt = 300 A/s IF = 28 A, di/dt = 1000 A/s V 28 45 ns 53 84 nC 23 36 ns 121 194 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RCA is determined by the user's board design. b. 115 C/W when mounted on a minimum pad of 2 oz copper. a. 45 C/W when mounted on a 1 in2 pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 486 mJ is based on starting TJ = 25 C; N-ch: L = 3 mH, IAS = 18 A, VDD = 80 V, VGS =10 V. 100% test at L = 0.1 mH, IAS = 57 A. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. www.onsemi.com 2 FDMS003N08C N-Channel Shielded Gate PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted VGS = 10 V PULSE DURATION = 80 s VGS = 8 V DUTY CYCLE = 0.5% MAX 250 VGS = 7 V 200 VGS = 6 V 150 VGS = 5.5 V 100 VGS = 5 V 50 0 0 1 2 3 4 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 300 VGS = 5 V 4 VGS = 5.5 V 3 VGS = 6 V 2 VGS = 7 V 1 0 5 0 50 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 -50 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 ID = 56 A VGS = 10 V 0.6 -75 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 TJ = 150 oC TJ = 25 oC 50 TJ = -55 oC 2 3 4 5 6 300 ID = 56 A 10 TJ = 125 oC 5 TJ = 25 oC 4 5 6 7 8 9 10 Figure 4. On-Resistance vs. Gate to Source Voltage 200 100 250 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS = 5 V 250 200 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 15 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs. Junction Temperature 300 150 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.0 0 100 VGS = 10 V ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.8 VGS = 8 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 300 100 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDMS003N08C N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 10000 ID = 56 A 8 VDD = 40 V 6 VDD = 50 V 4 1000 Coss 100 Crss 10 2 0 Ciss VDD = 30 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 f = 1 MHz VGS = 0 V 0 10 20 30 40 50 1 0.1 60 1 10 80 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 100 150 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RJC = 1.0 C/W TJ = 25 oC TJ = 100 oC 10 TJ = 125 oC 1 0.001 0.01 0.1 1 10 100 120 VGS = 10 V 90 VGS = 6 V 60 30 0 25 1000 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 125 150 100000 10 s 100 100 s THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RJC = 1.0 oC/W 0.1 0.1 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1000 1 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 10 50 o tAV, TIME IN AVALANCHE (ms) TC = 25 oC 1 1 ms 10 ms CURVE BENT TO MEASURED DATA 10 100 ms/DC 100 SINGLE PULSE RJC = 1.0 oC/W TC = 25 oC 10000 500 1000 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1 FDMS003N08C N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -5 10 NOTES: SINGLE PULSE ZJC(t) = r(t) x RJC RJC = 1.0 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 -4 10 -3 -2 10 10 Figure 13. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 5 -1 10 t, RECTANGULAR PULSE DURATION (sec) 1 FDMS003N08C N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. FDMS003N08C N-Channel Shielded Gate PowerTrench(R) MOSFET Dimensional Outline and Pad Layout ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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