44
VTB Proc ess Photodiode VTB9412BH, 9413BH
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a
recessed ceramic package. The package
incorporates an infrared rejection filter. These
diodes have very high shunt resistance and
have good blue response.
PACKAGE DIMENSIONS inch (mm)
CASE 20F 6 m m CERAMIC
CHIP ACTIVE AREA: .0025 in
2
(1.60 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 75°C
Ope rati ng Temp erature: -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBO L CHARACTERI ST IC TEST C O ND I TI ONS VTB9412BH VTB9413BH UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K .8 1.3 .8 1.3 µA
TC ISC ISC Temperature Coefficient 2850 K .02 .08 .02 .0 8 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV
TC V OC VOC Tem perature Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 100 20 pA
RSH Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 .31 .31 nF
λrange Spectral Applica tion Range 330 720 330 720 nm
λpSpectral Response - Pea k 580 580 nm
VBR Breakdown Voltage 2 40 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±50 ±50 Degrees
NEP Noise Equivalent Power 5.3 x 10-14 (Typ.) 1.1 x 10-14 (Typ.)
D* Specific Detectivity 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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