IS725 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 DESCRIPTION The IS725 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (300V min.) l Low collector dark current :1A max. at 200V VCE l Low input current 1mA IF APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances Dimensions in mm 2.54 1 7.0 6.0 7.62 6.62 7.62 1.25 0.75 7.62 13 Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR 300V 300V 6V 150mA 300mW POWER DISSIPATION 350mW 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 7/12/00 4 4.0 3.0 Total Power Dissipation 10.46 9.86 5 3 OPTION G SURFACE MOUNT 0.6 0.1 2 1.2 Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-baseVoltage BVECO Collector Current IC Power Dissipation OPTION SM 6 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91065m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 Collector-emitter Breakdown (BVCEO ) Collector-base Breakdown (BVCBO ) Emitter-base Breakdown (BVEBO ) 1.2 1.4 V V A IF = 10mA IR = 10A VR = 6V 300 300 V V IC = 1mA IC = 0.1mA 6 V IE = 0.1mA 1 A VCE = 200V 1.2 % V 1mA IF , 2V VCE 20mA IF , 100mA IC VRMS VPK See note 1 See note 1 pF VIO = 500V (note 1) V = 0, f =1MHz kHz VCE = 2V, IC= 20mA, RL = 100, RBE= open s s VCE = 2V, IC= 20mA, RL = 100, RBE= open 10 Collector-emitter Dark Current (ICEO ) Coupled Current Transfer Ratio (CTR) 1000 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 4000 5300 7500 Input-output Isolation Resistance RISO 5x1010 Input-output Capacitance Cf Note 1 Note 2 Cut-off frequency fc Output Rise Time Output Fall Time tr tf TEST CONDITION 1 1 300 100 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC Input ton 100 toff tr Input 7/12/00 IC = 20mA Output tf Output 10% 10% 90% 90% DB91065m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 300 200 100 120 2mA 100 80 60 1mA 40 IF = 0.5mA 20 0 0 -30 0 25 50 75 100 0 125 0.4 Forward Current vs. Ambient Temperature Relative current transfer ratio Forward current I F (mA) 1.6 2.0 IF = 1mA VCE= 2V 1.5 50 40 30 20 10 0 1.0 0.5 0 -30 0 25 50 75 100 125 -30 0 25 50 75 Ambient temperature TA ( C ) Ambient temperature TA ( C ) 10-5 Collector dark current I CEO (A) 1.2 1.0 0.8 IF = 20mA IC = 100mA 0.6 100 Collector Dark Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature (V) CE(SAT) 1.2 Relative Current Transfer Ratio vs. Ambient Temperature 60 Collector-emitter saturation voltage V 0.8 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( C ) 0.4 0.2 0 VCE= 200V 10-6 10-7 10-8 10-9 10-10 10-11 -30 0 25 50 75 Ambient temperature TA ( C ) 7/12/00 4mA 10mA 140 Collector current I C (mA) Collector power dissipation P C (mW) 400 100 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB91065m-AAS/A1