Preliminary Specifications are subject to change without notice. DESCRIPTION The FA01391 is GaAs RF amplifier designed for W-CDMA hand-held phone. FEATURES Low voltage High power Po=26.5dBm High gain Gp=26.5dB stage amplifier Internal input and output matching Vd=3.5V @1920~1980MHz @Po=26.5dBm APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (UE Power Class 3). FA01391 GaAs FET HYBRID IC OUTLINE DRAWING Unit : millimeters 1B Pout @ GND a vs % @) 6nd vaz @ Vee2 GND unit cm ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Parameter Condition Ratings Unit Vd Supply voltage of HPA 6 Pin Input power ZG=ZL=500Q 5 dBm Tc(op) Operating case temp. -30 ~ +85 C Tstg Storage temp. -30 ~ +125 C *Note : Each maximum rating is guaranteed independently . ELECTRICAL CHARACTERISTICS(Ta=25C) Symbol Parameter Limits Test conditions** MIN TYP | MAX Unit f Frequency 1920 1980 MHz Id_idle Idle drain current No REF input 80 mA \dt Total drain current Po=26.5dBm 303 mA PAE Power added efficiency Vd1=Vd2=Vd3=3.5V 42 % Gain Gain Vgg1=Vgg2=-2.5V 26.5 dB pin Return loss dB ACP Adjacent channel power at SMHz dBc Adjacent channel power at 10MHz dBc 2sp 2nd harmonics dBc 3sp 3rd harmonics dBc *NOTE : ZG=ZL=500 3.84Mcps spreading, HPSK. MITSUBISHI ELECTRIC CORP. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (iijuse of non-flammable material or (iii)jprevention against any malfunction or mishap. June, 00