AMPLIFIERS - LINEAR & POWER - CHIP
1
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
General Description
Features
Functional Diagram
The HMC906A is a four stage GaAs pHEMT MMIC
2 Watt Power Amplier which operates between
27.3 and 33.5 GHz. The HMC906A provides 26.5 dB
of gain, and +33.5 dBm of saturated output power and
20% PAE from a +6V supply. The OIP3 of 40 dBm
at 28 dBm / tone provides excellent linearity for sat-
ellite communications. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCMs). All data is taken with
the chip in a 50 Ohm test xture connected via two
0.025 mm (1 mil) diameter wire bonds of length
0.31 mm (12 mils).
Saturated Output Power: +33.5 dBm @ 20% PAE
High Output IP3: +44 dBm @ +24 dBm / tone
High Gain: 26.5 dB
DC Supply: +6V @ 1200 mA
No External Matching Required
Die Size: 3.18 x 2.73 x 0.1 mm
Typical Applications
The HMC906A is ideal for:
• Satellite Communications
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Electrical Specications, TA = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1]
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 27.3 - 31.5 31.5 - 33.5 GHz
Gain 25 26.5 25 26.5 dB
Input Return Loss 14 12
Output Return Loss 17 16 dB
Output Power for 1 dB Compression (P1dB) 32 33 31.5 33.5 dBm
Saturated Output Power (Psat) 33.5 34 dBm
Output Third Order Intercept (IP3)
Pout / tone = +24 dBm 44 43 dBm
Total Supply Current (Idd) 1200 1200 mA
Supply Voltage 5 6 6.5 5 6 6.5 V
[1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve Idd = 1200 mA typical. Vgg typical = -0.7 V
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
2
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Gain & Return Loss Gain vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
22 24 26 28 30 32 34 36
S21 S11 S22
FREQUENCY (GHz)
RESPONSE (dB)
14
16
18
20
22
24
26
28
30
27 28 29 30 31 32 33 34
+25C +85C -55C
FREQUENCY (GHz)
GAIN (dB)
Gain vs. Vdd Gain vs. Idd
14
16
18
20
22
24
26
28
30
27 28 29 30 31 32 33 34
1000mA
1100mA 1200mA
1300mA
FREQUENCY (GHz)
GAIN (dB)
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
-25
-20
-15
-10
-5
0
27 28 29 30 31 32 33 34
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
25 26 27 28 29 30 31 32 33 34
+25C +85C -55C
RETURN LOSS (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
27 28 29 30 31 32 33 34
+5V
+5.5V
+6V
+6.5V
FREQUENCY (GHz)
GAIN (dB)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
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HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Reverse Isolation vs. Temperature P1dB vs. Temperature
Psat vs. Temperature
-70
-60
-50
-40
-30
-20
-10
0
27 28 29 30 31 32 33 34
+25C +85C -55C
ISOLATION (dB)
FREQUENCY (GHz)
24
26
28
30
32
34
36
38
27 28 29 30 31 32 33 34
+25C +85C -55C
P1dB (dBm)
FREQUENCY (GHz)
24
26
28
30
32
34
36
38
27 28 29 30 31 32 33 34
+25C +85C -55C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Vdd
24
26
28
30
32
34
36
38
27 28 29 30 31 32 33 34
+5V
+5.5V
+6V
+6.5V
P1dB (dBm)
FREQUENCY (GHz)
Psat vs. Vdd
24
26
28
30
32
34
36
38
27 28 29 30 31 32 33 34
+5V
+5.5V
+6V
+6.5V
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Idd
24
26
28
30
32
34
36
38
27 28 29 30 31 32 33 34
1100mA 1200mA 1300mA
P1dB (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
4
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Psat vs. Idd
24
26
28
30
32
34
36
38
27 28 29 30 31 32 33 34
1100mA 1200mA 1300mA
Psat (dBm)
FREQUENCY (GHz)
Power Compression @ 30 GHz
0
6
12
18
24
30
36
1100
1300
1500
1700
1900
2100
2300
-8 -6 -4 -2 0 2 4 6 8 10 12
Idd
Pout Gain PAE
Pout(dBm), GAIN(dB), PAE(%)
Idd (mA)
INPUT POWER (dBm)
Gain and Power vs. Idd @ 30 GHz
PAE @ Psat vs. Temperature
Gain and Power vs. Vdd @ 30 GHz
20
22
24
26
28
30
32
34
36
38
40
1100 1125 1150 1175 1200 1225 1250 1275 1300
GAIN P1dB Psat
Idd (mA)
Gain (dB), P1dB (dBm), Psat (dBm)
20
22
24
26
28
30
32
34
36
38
40
5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 6.2 6.3 6.4 6.5
GAIN P1dB Psat
Vdd (V)
Gain (dB), P1dB (dBm), Psat (dBm)
0
5
10
15
20
25
30
27 28 29 30 31 32 33 34
+25C +85C -55C
PAE(%)
FREQUENCY (GHz)
Power Dissipation @ 85C
6
7
8
9
10
11
-8 -6 -4 -2 0 2 4 6 8 10 12 14
28GHz
29GHz
30GHz
31GHz
32GHz
33GHz
POWER DISSIPATION (W)
INPUT POWER (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
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HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Output IP3 vs. Temperature,
Pout/Tone = +24 dBm
25
30
35
40
45
50
27 28 29 30 31 32 33 34
+25C +85C -55C
FREQUENCY (GHz)
IP3 (dBm)
Output IP3 vs. Temperature,
Pout/Tone = +28 dBm
25
30
35
40
45
50
27 28 29 30 31 32 33 34
+25C +85C -55C
FREQUENCY (GHz)
IP3 (dBm)
Output IP3 vs. Vdd,
Pout/Tone = +24 dBm
Output IP3 vs. Idd,
Pout/Tone = +24 dBm
Output IP3 vs. Vdd,
Pout/Tone = +28 dBm
Output IP3 vs. Idd,
Pout/Tone = +28 dBm
25
30
35
40
45
50
27 28 29 30 31 32 33 34
+5V
+5.5V
+6V
+6.5V
FREQUENCY (GHz)
IP3 (dBm)
25
30
35
40
45
50
27 28 29 30 31 32 33 34
+5V
+5.5V
+6V
+6.5V
FREQUENCY (GHz)
IP3 (dBm)
25
30
35
40
45
50
27 28 29 30 31 32 33 34
1100mA 1200mA 1300mA
FREQUENCY (GHz)
IP3 (dBm)
25
30
35
40
45
50
27 28 29 30 31 32 33 34
1100mA 1200mA 1300mA
FREQUENCY (GHz)
IP3 (dBm)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
6
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Output IM3 @ Vdd=5V
Output IM3 @ Vdd=6V Output IM3 @ Vdd=6.5V
Igg vs. Input Power
Idd vs. Vgg
Representative of a Typical Device
Output IM3 @ Vdd=5.5V
10
20
30
40
50
60
70
80
12 14 16 18 20 22 24 26 28
28GHz
29GHz
30GHz
31GHz
32GHz
33GHz
IM3 (dBc)
Pout/TONE (dBm)
10
20
30
40
50
60
70
80
12 14 16 18 20 22 24 26 28
28GHz
29GHz
30GHz
31GHz
32GHz
33GHz
IM3 (dBc)
Pout/TONE (dBm)
10
20
30
40
50
60
70
80
90
12 14 16 18 20 22 24 26 28
28GHz
29GHz
30GHz
31GHz
32GHz
33GHz
IM3 (dBc)
Pout/TONE (dBm)
10
20
30
40
50
60
70
80
12 14 16 18 20 22 24 26 28
28GHz
29GHz
30GHz
31GHz
32GHz
33GHz
IM3 (dBc)
Pout/TONE (dBm)
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
-10 -8 -6 -4 -2 0 2 4 6 8 10 12
28GHz
29GHz
30GHz
31GHz
32GHz
33GHz
Igg(mA)
INPUT POWER (dBm)
-200
0
200
400
600
800
1000
1200
1400
1600
1800
-1.6 -1.4 -1.2 -1 -0.8 -0.6
Idd(mA)
Vgg1(V)
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
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HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vd) +7V
RF Input Power (RFIN) +20 dBm
Continuous Pdiss (T= 85 °C)
(derate 146.4 mW/°C above 85 °C) 13.18 W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 0B - Passed 150V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Channel Temperature 175 °C
Nominal Junction Temperature
(T=85 °C, Vdd = 10V) 134.2 °C
Thermal Resistance
(channel to die bottom) 6.83 °C/W
Reliabilty Information
Stresses at or above those listed in the Absolute Maximum
Ratings may cause permanent damage to the product. This
is a stress rating only, functional operation of the product
at these or any other conditions above those indicated in
the operational section of this specication is not implied.
Operation beyond the maximum operating condition for
extended periods may affect product reliability.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
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HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± 0.002”
Die Packaging Information [1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section on our
website for die packaging dimensions.
[2] For alternate packaging information contact Analog
Devices Inc.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
9
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1RFIN This pad is AC coupled and matched to 50 Ohms
over the operating frequency range.
2, 12 Vgg
Gate control for amplier. External bypass caps
100 pF, 0.1 µF and 4.7 µF are required. Only one pad
connection is required as these two pads are connected
on-chip.
3 - 6 Vdd1
Drain bias voltage for the top half of the amplier. External
bypass capacitors of 100 pF required for each pad, followed
by common 0.1 µF and 4.7 µF are capacitors.
7RFOUT . This pad is AC coupled and matched to 50 Ohms
over the operating frequency range.
8 - 11 Vdd2
Drain bias voltage for the lower half of the amplier. Exter-
nal bypass capacitors of 100 pF required for each pad,
followed by common 0.1 µF and 4.7 µF are capacitors.
Die Bottom GND Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
10
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Application Circuit
*Vgg may be applied to either pad 2 or pad 12.
Assembly Diagram [1]
[1] Vgg may be applied to either pad 2 or pad 12.
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
11
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-
up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force
of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds
should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a
nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
AMPLIFIERS - LINEAR & POWER - CHIP
12
HMC906A
v02.0617
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Notes: