HMC906A v02.0617 Amplifiers - Linear & Power - CHIP GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Typical Applications Features The HMC906A is ideal for: Saturated Output Power: +33.5 dBm @ 20% PAE * Satellite Communications High Output IP3: +44 dBm @ +24 dBm / tone * Point-to-Point Radios High Gain: 26.5 dB * Point-to-Multi-Point Radios DC Supply: +6V @ 1200 mA * VSAT No External Matching Required * Military & Space Die Size: 3.18 x 2.73 x 0.1 mm Functional Diagram General Description The HMC906A is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier which operates between 27.3 and 33.5 GHz. The HMC906A provides 26.5 dB of gain, and +33.5 dBm of saturated output power and 20% PAE from a +6V supply. The OIP3 of 40 dBm at 28 dBm / tone provides excellent linearity for satellite communications. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter wire bonds of length 0.31 mm (12 mils). Electrical Specifications, TA = +25 C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain 25 Input Return Loss Min. 26.5 25 Output Third Order Intercept (IP3) Pout / tone = +24 dBm Total Supply Current (Idd) Max. Units GHz 26.5 dB 16 dB 33.5 dBm 33.5 34 dBm 44 43 dBm 33 31.5 1200 5 Typ. 31.5 - 33.5 12 17 32 Saturated Output Power (Psat) Supply Voltage Max. 14 Output Return Loss Output Power for 1 dB Compression (P1dB) Typ. 27.3 - 31.5 6 1200 6.5 5 6 mA 6.5 V [1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve Idd = 1200 mA typical. Vgg typical = -0.7 V 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Gain & Return Loss Gain vs. Temperature 25 28 26 15 10 GAIN (dB) RESPONSE (dB) 20 5 0 22 -5 20 -10 18 -15 16 -20 14 -25 22 24 26 28 30 32 FREQUENCY (GHz) S21 34 27 36 28 29 S11 +25C S22 31 32 33 34 +85C -55C Gain vs. Idd 30 28 28 26 26 24 24 GAIN (dB) 30 22 20 22 20 18 18 16 16 14 14 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) 30 31 32 33 34 FREQUENCY (GHz) +5V +5.5V +6V +6.5V 1000mA 1100mA Input Return Loss vs. Temperature 1200mA 1300mA Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 30 FREQUENCY (GHz) Gain vs. Vdd GAIN (dB) 24 Amplifiers - Linear & Power - CHIP 30 30 -10 -15 -20 -10 -15 -20 -25 -25 27 28 29 30 31 32 33 34 FREQUENCY (GHz) +25C +85C 25 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) -55C +25C +85C -55C For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz 38 -10 36 -20 34 P1dB (dBm) ISOLATION (dB) P1dB vs. Temperature 0 -30 -40 32 30 -50 28 -60 26 -70 24 27 28 29 30 31 32 33 27 34 28 29 +25C +85C +25C -55C Psat vs. Temperature 36 34 34 P1dB (dBm) 38 36 32 30 32 33 34 +85C -55C 32 30 28 28 26 26 24 24 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) +25C 30 31 32 33 34 33 34 FREQUENCY (GHz) +85C +5V +5.5V -55C +6V +6.5V P1dB vs. Idd 38 38 36 36 34 34 P1dB (dBm) Psat (dBm) 31 P1dB vs. Vdd 38 Psat vs. Vdd 32 30 32 30 28 28 26 26 24 24 27 28 29 30 31 32 33 34 27 28 29 +5V +5.5V 30 31 32 FREQUENCY (GHz) FREQUENCY (GHz) 3 30 FREQUENCY (GHz) FREQUENCY (GHz) Psat (dBm) Amplifiers - Linear & Power - CHIP Reverse Isolation vs. Temperature +6V +6.5V 1100mA 1200mA 1300mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Power Compression @ 30 GHz 38 Psat (dBm) 34 32 30 28 26 24 27 28 29 30 31 32 33 2300 30 2100 24 1900 18 1700 12 1500 6 1300 -8 FREQUENCY (GHz) 1100mA 1100 0 34 Idd (mA) Pout(dBm), GAIN(dB), PAE(%) 36 36 -6 -4 -2 0 2 4 6 8 10 12 INPUT POWER (dBm) 1200mA Pout 1300mA Gain PAE Idd Gain and Power vs. Idd @ 30 GHz Gain and Power vs. Vdd @ 30 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 40 38 36 34 32 30 28 26 24 22 20 38 36 34 32 30 28 26 24 22 20 1100 1125 1150 1175 1200 1225 1250 1275 1300 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 Idd (mA) GAIN P1dB Psat GAIN PAE @ Psat vs. Temperature 6.1 6.2 6.3 6.4 6.5 P1dB Psat Power Dissipation @ 85C 12 25 11 POWER DISSIPATION (W) 30 20 PAE(%) 6 Vdd (V) Amplifiers - Linear & Power - CHIP Psat vs. Idd 15 10 5 0 10 9 8 7 6 27 28 29 30 31 32 33 FREQUENCY (GHz) +25C +85C 34 -8 -6 -4 -2 0 2 4 6 8 10 12 14 INPUT POWER (dBm) -55C 28GHz 29GHz 30GHz 31GHz 32GHz 33GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz 50 50 45 45 IP3 (dBm) IP3 (dBm) Output IP3 vs. Temperature, Pout/Tone = +28 dBm 40 35 30 40 35 30 25 25 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) +25C +85C +25C -55C 50 45 45 IP3 (dBm) 50 40 35 30 32 33 34 +85C -55C 40 35 30 25 25 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) +5V +5.5V 30 31 32 33 34 33 34 FREQUENCY (GHz) +6V +6.5V +5V +5.5V +6V +6.5V Output IP3 vs. Idd, Pout/Tone = +28 dBm 50 50 45 45 IP3 (dBm) IP3 (dBm) 31 Output IP3 vs. Vdd, Pout/Tone = +28 dBm Output IP3 vs. Idd, Pout/Tone = +24 dBm 40 35 30 40 35 30 25 25 27 28 29 30 31 32 33 34 27 28 29 FREQUENCY (GHz) 1100mA 5 30 FREQUENCY (GHz) Output IP3 vs. Vdd, Pout/Tone = +24 dBm IP3 (dBm) Amplifiers - Linear & Power - CHIP Output IP3 vs. Temperature, Pout/Tone = +24 dBm 1200mA 30 31 32 FREQUENCY (GHz) 1300mA 1100mA 1200mA 1300mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz 80 70 70 60 60 50 40 50 40 30 30 20 20 10 10 12 14 16 18 20 22 24 26 28 12 14 16 Pout/TONE (dBm) 20 22 24 26 28 26 28 Pout/TONE (dBm) 28GHz 29GHz 30GHz 31GHz 32GHz 33GHz 28GHz 29GHz 30GHz Output IM3 @ Vdd=6V 31GHz 32GHz 33GHz Output IM3 @ Vdd=6.5V 90 80 80 70 70 60 60 IM3 (dBc) IM3 (dBc) 18 50 50 40 40 30 30 20 20 10 10 12 14 16 18 20 22 24 26 28 12 14 16 Pout/TONE (dBm) 31GHz 32GHz 33GHz 22 28GHz 29GHz 30GHz 24 31GHz 32GHz 33GHz Idd vs. Vgg Representative of a Typical Device Igg 2vs. Input Power 1800 1 1600 0 1400 -1 1200 -2 1000 Idd(mA) Igg(mA) 20 Pout/TONE (dBm) 28GHz 29GHz 30GHz -3 -4 -5 800 600 400 -6 200 -7 -8 -10 18 Amplifiers - Linear & Power - CHIP Output IM3 @ Vdd=5.5V 80 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd=5V 0 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 8 10 12 -200 -1.6 -1.4 -1.2 -1 -0.8 -0.6 Vgg1(V) 28GHz 29GHz 30GHz 31GHz 32GHz 33GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Amplifiers - Linear & Power - CHIP Absolute Maximum Ratings 7 Reliabilty Information Drain Bias Voltage (Vd) +7V Channel Temperature 175 C RF Input Power (RFIN) +20 dBm 134.2 C Continuous Pdiss (T= 85 C) (derate 146.4 mW/C above 85 C) Nominal Junction Temperature (T=85 C, Vdd = 10V) 13.18 W 6.83 C/W Storage Temperature -65 to +150 C Thermal Resistance (channel to die bottom) Operating Temperature -55 to +85 C Stresses at or above those listed in the Absolute Maximum ESD Sensitivity (HBM) Class 0B - Passed 150V Ratings may cause permanent damage to the product. This is a stress rating only, functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating condition for extended periods may affect product reliability. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Amplifiers - Linear & Power - CHIP Outline Drawing Die Packaging Information [1] Standard Alternate GP-1 (Gel Pack) [2] [1] Refer to the "Packaging Information" section on our website for die packaging dimensions. [2] For alternate packaging information contact Analog Devices Inc. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE 0.002" For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 8 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Amplifiers - Linear & Power - CHIP Pad Descriptions 9 Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 2, 12 Vgg Gate control for amplifier. External bypass caps 100 pF, 0.1 F and 4.7 F are required. Only one pad connection is required as these two pads are connected on-chip. 3-6 Vdd1 Drain bias voltage for the top half of the amplifier. External bypass capacitors of 100 pF required for each pad, followed by common 0.1 F and 4.7 F are capacitors. 7 RFOUT . This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 8 - 11 Vdd2 Drain bias voltage for the lower half of the amplifier. External bypass capacitors of 100 pF required for each pad, followed by common 0.1 F and 4.7 F are capacitors. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz *Vgg may be applied to either pad 2 or pad 12. Assembly Diagram [1] Amplifiers - Linear & Power - CHIP Application Circuit [1] Vgg may be applied to either pad 2 or pad 12. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 10 HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Amplifiers - Linear & Power - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 11 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC906A v02.0617 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz Amplifiers - Linear & Power - CHIP Notes: For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 * Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 12