AP9575AGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Higher Gate-Source Voltage D Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free BVDSS -60V RDS(ON) 64m ID G -17A S Description The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9575AGJ) are available for low-profile applications. G D G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +30 V ID@TC=25 Continuous Drain Current, VGS @ 10V -17 A ID@TC=100 Continuous Drain Current, VGS @ 10V -11 A 1 IDM Pulsed Drain Current -60 A PD@TC=25 Total Power Dissipation 36 W Linear Derating Factor 0.29 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 3.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 201105313 AP9575AGH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-12A - - 64 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 12 - S IDSS Drain-Source Leakage Current VDS=-60V, VGS=0V - - -10 uA Drain-Source Leakage Current (T j=125oC) VDS=-48V, VGS=0V - - -250 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA ID=-12A - 35 56 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-48V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 12 - nC VDS=-30V - 12 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-12A - 23 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 45 - ns tf Fall Time RD=2.5 - 60 - ns Ciss Input Capacitance VGS=0V - 1440 2300 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 120 - pF Min. Typ. IS=-12A, VGS=0V - - -1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-12A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 75 - nC Notes: 1.Pulse width limited Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9575AGH/J-HF 60 40 -10V -7.0V 40 -5.0V -4.5V 20 V G =-3.0V 30 -5.0V 20 -4.5V V G =- 4 .0V 10 0 0 0 2 4 6 8 10 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 210 2.0 I D = -9 A T C =25 I D = - 12 A V G =-10V 1.8 Normalized RDS(ON) 170 RDS(ON) (m ) -10V -7.0V TC=150oC -ID , Drain Current (A) -ID , Drain Current (A) T C =25 o C 130 90 1.6 1.4 1.2 1.0 0.8 0.6 50 0.4 2 4 6 8 10 -50 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 16.0 3.0 12.0 2.5 -VGS(th) (V) -IS(A) Fig 3. On-Resistance v.s. Gate Voltage T j =150 o C 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 8.0 4.0 2.0 1.5 0.0 1.0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 12 2400 10 2000 8 f=1.0MHz 1600 I D = -12A V DS = -48V C (pF) -VGS , Gate to Source Voltage (V) AP9575AGH/J-HF 6 C iss 1200 4 800 2 400 0 0 0 10 20 30 40 C oss C rss 1 50 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Operation in this area limited by RDS(ON) 100us -ID (A) 10 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 -ID , Drain Current (A) V DS = -5V T j =25 o C VG T j =150 o C QG 20 -10V QGS QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4