ZMY3V9 to ZMY100
Document Number 85788
Rev. 1.7, 07-Aug-06
Vishay Semiconductors
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1
18315
Zener Diodes
Features
Silicon Planar Power Zener Diodes
For use in stablilizing and clipping circuits
with high power rating
The Zener voltages are graded according
to the international E 24 standard. Smaller voltage
tolerances are available upon request
These diodes are also available in the DO41 case
with the type designation ZPY3V9 to ZPY100
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: MELF Glass case
Weight: approx. 135 mg
Cathode Band Color: black
Packaging Codes/Options:
GS18/ 5 k per 13" reel (12 mm tape), 10 k/box
GS08/ 1.5 k per 7" reel (12 mm tape), 12 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Parameter Test condition Symbol Value Unit
Zener current (see Table "Characteristics")
Power dissipation Ptot 1.01) W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air RthJA 1701) K/W
Thermal resistance junction to case RthJC 60 K/W
Junction temperature Tj175 °C
Storage temperature Tstg - 55 to + 175 °C
e2
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Document Number 85788
Rev. 1.7, 07-Aug-06
ZMY3V9 to ZMY100
Vishay Semiconductors
Electrical Characteristics
1) Valid provided that electrodes are kept at ambient temperature
2) Tested with pulses tp = 5 ms
Partnumber Zener Voltage (2) Dynamic Resistance Temperature
Coefficient of
Zener Voltage
Te s t
Current
Reverse Voltage Admissible Zener
Current1)
VZ at IZT rzj at IZT, f = 1 kHz αVZ at IZT IZT VR at
IR = 0.5 µA
IZ at
Tamb = 25 °C
VΩ10-4/°C mA VmA
min max typ min max
ZMY3V9 3.7 4.1 7 4 - 7 2 100 - 203
ZMY4V3 4 4.6 7 4 - 7 3 100 - 182
ZMY4V7 4.4 5 7 4 - 7 4 100 - 165
ZMY5V1 4.8 5.4 5 2 - 6 5 100 0.7 150
ZMY5V6 5.2 6 2 1 - 3 5 100 1.5 135
ZMY6V2 5.8 6.6 2 1 - 1 6 100 2 128
ZMY6V8 6.4 7.2 2 1 0 7 100 3 110
ZMY7V5 7 7.9 2 1 0 7 100 5 100
ZMY8V2 7.7 8.7 2 1 3 8 100 6 89
ZMY9V1 8.5 9.6 4 2 3 8 50 7 82
ZMY10 9.4 10.6 4 2 5 9 50 7.5 74
ZMY11 10.4 11.6 7 3 5 10 50 8.5 66
ZMY12 11.4 12.7 7 3 5 10 50 9 60
ZMY13 12.4 14.1 9 4 5 10 50 10 55
ZMY15 13.8 15.8 9 4 5 10 50 11 49
ZMY16 15.3 17.1 10 5 7 11 25 12 44
ZMY18 16.8 19.1 11 5 7 11 25 14 40
ZMY20 18.8 21.2 12 6 7 11 25 15 36
ZMY22 20.8 23.3 13 7 7 11 25 17 34
ZMY24 22.8 25.6 14 8 7 12 25 18 29
ZMY27 25.1 28.9 15 9 7 12 25 20 27
ZMY30 28 32 20 10 7 12 25 22.5 25
ZMY33 31 35 20 11 7 12 25 25 22
ZMY36 34 38 60 25 7 12 10 27 20
ZMY39 37 41 60 30 8 12 10 29 18
ZMY43 40 46 80 35 8 13 10 32 17
ZMY47 44 50 80 40 8 13 10 35 15
ZMY51 48 54 100 45 8 13 10 38 14
ZMY56 52 60 100 50 8 13 10 42 13
ZMY62 58 66 130 60 8 13 10 47 11
ZMY68 64 72 130 65 8 13 10 51 10
ZMY75 70 79 160 70 8 13 10 56 9
ZMY82 77 88 160 80 8 13 10 61 8
ZMY91 85 96 250 120 9 13 5 68 7.5
ZMY100 94 106 250 130 9 13 5 75 7
ZMY3V9 to ZMY100
Document Number 85788
Rev. 1.7, 07-Aug-06
Vishay Semiconductors
www.vishay.com
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Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Dynamic Resistance vs. Zener Current
Figure 2. Dynamic Resistance vs. Zener Current
Figure 3. Dynamic Resistance vs. Zener Current
1
2
10 100
mA
10
3
10
2
1
Ω
r
zj
I
Z
18312
54
3254
3
2
5
4
3
2
5
4
3
2
5
4
3
10
77
ZMY5.1
ZMY4.3
ZMY18
ZMY12
ZMY7.5
ZMY6.2
ZMY10
ZMY...
1
210 100 mA
100
10
1
Ω
2
5
4
3
rzj
IZ
18313
54
3254
3
7
2
5
4
3
7
ZMY43
ZMY36
ZMY30
ZMY24
ZMY22
ZMY...
ZMY18
ZMY...
0.1
2
110
mA
10
3
10
2
10
Ω
2
5
4
3
r
zj
I
Z
18314
54
3254
3
7
2
5
4
3
7
ZMY100
ZMY82
ZMY68
ZMY56
ZMY43
Figure 4. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Pulse Thermal Resistance vs. Pulse Duration
0 100 200 °C
0.8
0.4
0
W
Ptot
Tamb
19969
ZMY...
1.0
0.6
0.2
10-5 10-4 10-3 10-2 10-1 110
s
103
102
10
1
°C/W
2
5
4
3
2
5
4
3
2
5
4
3
rthA
tP
18286
tP
v =
T
PI
___
T
tP
0.5
0.2
0.1
0.05
0.02
0.01
ZMY...
V = 0
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Document Number 85788
Rev. 1.7, 07-Aug-06
ZMY3V9 to ZMY100
Vishay Semiconductors
Figure 6. Breakdown Characteristics
Figure 7. Breakdown Characteristics
0123456789 1011 12131415 V
0
40
80
120
160
200
240
mA
IZ
VZ
18309
ZMY...
Tj = 25 °C
Test Current lZ
100 mA
50 mA
ZMY4.7
ZMY3.9
ZMY5.6
ZMY6.8
ZMY8.2
ZMY10
ZMY12
0 5 101520253035
40 45 50 V
10
20
30
40
50
60
mA
IZ
VZ
18310
Tj = 25 °C
ZMY...
Test Current lZ
25 mA
10 mA
ZMY22
ZMY18
ZMY27
ZMY33
ZMY15
ZMY39
ZMY47
0
Figure 8. Breakdown Characteristics
0 100 200 V
0
10
20
mA
IZ
VZ
18311
50 150
Test Current l
Z
10 mA
5 mA
Tj = 25 °C
ZMY56
ZMY68
ZMY82
ZMY100
ZMY...
ZMY3V9 to ZMY100
Document Number 85788
Rev. 1.7, 07-Aug-06
Vishay Semiconductors
www.vishay.com
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Package Dimensions of MELF Glass in mm (Inches): DO41
18317
Cathode Identification
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Document Number 85788
Rev. 1.7, 07-Aug-06
VISHAY
ZMY3V9 to ZMY100
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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