NTE5351
Silicon Controlled Rectifier (SCR)
for High Speed Switching
Features:
DFast Turn–Off Time
DHigh di/dt and dv/dt Capabilities
DShorted–Emitter Gate–Cathode Construction
DCenter Gate Construction
Non–Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRSOM 700V. . . . . . . . . . . . . . . . . . . . .
Non–Repetitive Peak Off–State Voltage (Gate Open, Note 1), VDSOM 700V. . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRROM 600V. . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Off–State Voltage (Gate Open, Note 1), VDROM 600V. . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +60°C, 180° conduction angle), IT(RMS) 5.0A. . . . . . . . . . . . . . . . . . . .
Average On–State Current (TC = +60°C, 180° conduction angle), IT(AV) 3.2A. . . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current, ITSM
(TC = +60°C, for one full cycle at applied voltage)
60Hz (Sinusoidal) 80A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50Hz (Sinusoidal) 65A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Rate of Change of On–State Current (VD = 600V, IGT = 50mA, t = 1 to 8.3ms), di/dt 200A/µs. . . . .
Fusing Current (TJ = –40° to +100°C, t = 1 to 8.3ms), I2t 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Gate Power Dissipation (10µs Max, Note 2), PGM 3W. . . . . . . . . . . . . . . . . . . . . . . . .
Peak Reverse Gate Power Dissipation (10µs Max, Note 2), PRGM 3W. . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation (10µs Max, Note 2), PG(AV) 0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Case Temperature Range, TC–40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 8°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA 40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/32” from seating plane, 10sec max), TL+225°C. . . . . . . . .
Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased.
Note 2. A n y pr oduct of gate c urr ent a nd g ate v oltage w hic h r esults i n a g ate p ower l ess t han t he m axim um
is permitted .
Electrical Characteristics: (At “Maximum Ratings” and TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Forward Current IDOM VD = 600V, TC = +100°C, Gate Open –0.5 3.0 mA
Peak Off–State Reverse Current IROM VD = 600V, TC = +100°C, Gate Open –0.3 1.5 mA
Instantaneous On–State Voltage vTiT = 30A Peak –2.2 3.0 V
Instantaneous Holding Current iHO Gate Open –20 50 mA
Critical Rate of Rise of Off–State
Current dv/dt VD = 600V, exponential voltage rise,
TC = +80°C, Gate Open 100 250 –V/µs
DC Gate Trigger Current IGT VD = 12V, RL = 30Ω–15 40 mA
DC Gate Trigger Voltage VGT VD = 12V, RL = 30Ω–1.8 3.5 V
Gate Con t rolled Turn–On Time tgt VDX = 600V, IGT = 300mA, tr = 0.1µs,
IT = 2A peak –0.7 –µs
Circuit Commutated Turn–Off
Time tqVCX = 600V, iT = 2A, pu lse duration = 50µs,
dv/dt = 100V/µs, –di/dt = –10A/µs,
IGT = 100mA, VGT = 0V (at turn–off),
TC = +80°C
–4 6 µs
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3) Gate
.580 (14.7)
.200
(5.08)
CathodeAnode/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
