Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings Pre-Irradiation
Symbol Parameter Value Units
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -12.5
A
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -8.0
IDM @ TC = 25°C Pulsed Drain Current -50
PD @ TC = 25°C Maximum Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 96 mJ
IAR Avalanche Current -12.5 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt -6.2 V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5s)
Weight 1.0 (Typical) g
-55 to + 150
SMD-0.5
IRHNJ597130
JANSR2N7545U3
1 2019-02-25
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNJ597130 100 kRads(Si) 0.205 -12.5A JANSR2N7545U3
IRHNJ593130 300 kRads(Si) 0.205 -12.5A JANSF2N7545U3
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
PD-94047D
Description
For Footnotes, refer to the page 2.
100V, P-CHANNEL
REF: MIL-PRF-19500/712
R
5
TECHNOLOGY
Product Summary
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of 80
(MeV/(mg/cm2). The combination of low RDS(on) and low
gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
International Rectifier HiRel Products, Inc.
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International Rectifier HiRel Products, Inc.
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -12.5
ISM Pulsed Source Current (Body Diode) ––– ––– -50
VSD Diode Forward Voltage ––– ––– -5.0 V TJ=25°C, IS=-12.5A, VGS=0V
trr Reverse Recovery Time ––– ––– 191 ns TJ=25°C, IF=-12.5A,VDD ≤50V
Qrr Reverse Recovery Charge ––– ––– 778 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L = 1.2mH, Peak IL = -12.5A, VGS = -12V
ISD -12.5A, di/dt -320A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
Thermal Resistance
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 1.67 °C/W
RJ-PCB Junction-to-PC Board (Soldered to 2” sq copper clad board) ––– 6.9 –––
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.12 ––– V/°C Reference to 25°C, ID = -1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.205 VGS = -12V, ID2 = -8.0A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -1.0mA
Gfs Forward Transconductance 6.3 ––– ––– S VDS = -15V, ID2 = -8.0A
IDSS Zero Gate Voltage Drain Current ––– ––– -10 µA VDS = -80V, VGS = 0V
––– ––– -25 VDS = -80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V
Gate-to-Source Leakage Reverse ––– ––– 100 VGS = 20V
QG Total Gate Charge ––– ––– 45
nC
ID1 = -12.5A
QGS Gate-to-Source Charge ––– ––– 16 VDS = -50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 11 VGS = -12V
td(on) Turn-On Delay Time ––– ––– 25
ns
VDD = -50V
tr Rise Time ––– ––– 55 ID1 = -12.5A
td(off) Turn-Off Delay Time ––– ––– 33 RG = 7.5
tf Fall Time ––– ––– 103 VGS = -12V
Ls +LD Total Inductance ––– 4.0 ––– nH Measured from center of Drain
pad to center of Source pad
Ciss Input Capacitance ––– 1372 –––
pF
VGS = 0V
Coss Output Capacitance ––– 326 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 20 ––– ƒ = 1.0MHz
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International Rectifier HiRel Products, Inc.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol Parameter 100 kRads (Si)1
300 kRads (Si) 2
Units Test Conditions
Min. Max. Min. Max.
BVDSS Drain-to-Source Breakdown Voltage -100 ––– -100 ––– V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 V VDS = VGS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward ––– -100 ––– -100 nA VGS = -20V
IGSS Gate-to-Source Leakage Reverse ––– 100 ––– 100 nA VGS = 20V
IDSS Zero Gate Voltage Drain Current ––– -10 ––– -10 µA VDS = -80V, VGS = 0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) ––– 0.205 ––– 0.205 VGS = -12V, ID2 = -8.0A
VSD Diode Forward Voltage ––– -5.0 ––– -5.0 V VGS = 0V, IS = -12.5A
RDS(on) Static Drain-to-Source
On-State Resistance (SMD-0.5) ––– 0.205 ––– 0.205 VGS = -12V, ID2 = -8.0A
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
2. Part numbers IRHNJ593130, JANSF2N7545U3
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For Footnotes, refer to the page 2.
1. Part numbers IRHNJ597130, JANSR2N7545U3
Radiation Characteristics
Fig a. Typical Single Event Effect, Safe Operating Area
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm2))
Energy
(MeV)
Range
(µm)
VDS (V)
@ VGS = 0V @ VGS =5V @ VGS =10V @ VGS =20V
38 ± 5% 270 ± 7.5% 35 ± 7.5% -100 -100 -100 -100
61 ± 5% 330 ± 7.5% 30 ± 7.5% -100 -100 -100 -25
84 ± 5% 350 ± 7.5% 28 ± 7.5% -100 -100 -100 –––
@ VGS =15V
-100
-100
-30
-120
-100
-80
-60
-40
-20
0
0 5 10 15 20
Bias VDS (V)
Bias VGS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
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Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
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Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 8. Maximum Safe Operating Area
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty fac tor D = t / t
2. Peak T = P x Z + T
1 2
JDM th J C C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Therm al Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SIN GL E PU L SE
(THERMAL RESPONSE)
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International Rectifier HiRel Products, Inc.
Fig 12a. Unclamped Inductive Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
-12V
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Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
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IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
