© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1Publication Order Number:
BCP56T1/D
BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
•High Current: 1.0 A
•The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
•Available in 12 mm Tape and Reel
Use BCP56T1 to Order the 7 inch/1000 Unit Reel
Use BCP56T3 to Order the 13 inch/4000 Unit Reel
•PNP Complement is BCP53T1
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 80 Vdc
Collector−Base Voltage VCBO 100 Vdc
Emitter−Base Voltage VEBO 5 Vdc
Collector Current IC1 Adc
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD
1.5
12
W
mW/°C
Operating and Storage
Temperature Range
TJ, Tstg −65 to 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
RqJA 83.3 °C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL
260
10
°C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
COLLECTOR 2,4
BASE
1
EMITTER 3
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
12
3
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
AYW
xxxxxG
G
xx = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
BCP56 Series, SBCP56 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO 100 − − Vdc
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 80 − − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 5.0 − − Vdc
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO − − 100 nAdc
Emitter−Base Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO − − 10 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 5.0 mA, VCE = 2.0 V) All Part Types
(IC = 150 mA, VCE = 2.0 V)BCP56T1, SBCP56T1, SBCP56T3
BCP56−10T1, SBCP56−10T1
BCP56−16T1, SBCP56−16T1, SBCP56−16T3
(IC = 500 mA, VCE = 2.0 V)All Types
hFE
25
40
63
100
25
−
−
−
−
−
−
250
160
250
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) − − 0.5 Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on) − − 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz)
fT−130 −MHz
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Device Marking Package Shipping†
BCP56T1G BH SOT−223
(Pb−Free)
1000 / Tape & Reel
SBCP56T1G
BCP56T3G BH SOT−223
(Pb−Free)
4000 / Tape & Reel
SBCP56T3G
BCP56−10T1G BH−10 SOT−223
(Pb−Free)
1000 / Tape & Reel
SBCP56−10T1G
BCP56−16T1G BH−16 SOT−223
(Pb−Free)
1000 / Tape & Reel
SBCP56−16T1G
BCP56−16T3G BH−16 SOT−223
(Pb−Free)
4000 / Tape & Reel
SBCP56−16T3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BCP56 Series, SBCP56 Series
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
hFE, DC CURRENT GAIN
100
10 1000100101
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain − Bandwidth Product
f, CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)
T
1000
100
10 100101.0 1000
C, CAPACITANCE (pF)
80
60
40
20
10
8.0
6.0
4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
TJ = 125°C
TJ = 25°C
TJ = - 55°C
TJ = 25°C
Cibo
Cobo
1000
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.001
0.2
0.3
0.4
0.6
0.8
0.9
1.1
1.2
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10 150°C
25°C
−55°C
0.5
0.7
1.0
IC/IB = 10
150°C
25°C
−55°C
BCP56 Series, SBCP56 Series
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
IC, COLLECTOR CURRENT (mA)
0.05 0.1 0.2 0.5 2.0 5.0 10 20 50
VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
1.0
50
mA
100mA
TJ = 25°C
250mA 500mA
IC = 10mA
Figure 6. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.4
0.6
0.8
0.9
1.1
1.2
VBE(on), BASE−EMITTER VOLTAGE (V)
0.5
0.7
1.0
VCE = 2 V
150°C
25°C
−55°C
Figure 7. Collector Saturation Region
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Safe Operating Area
1.6
0.8
0.0
100200 160
PD, POWER DISSIPATION (W)
12040 14060 80
1.0
0.2
1.2
0.4
1.4
0.6
Figure 9. Power Derating Curve
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.01
1
IC, COLLECTOR CURRENT (A)
0.1
100 mS
10 mS
1 mS
1 S
BCP56 Series, SBCP56 Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
0°10°0°10°
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BCP56T1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative