TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices Qualified Level
2N2060
2N2060L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N2060 Unit
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current IC 500 mAdc
One
Section Both
Sections
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 540
1.5 600
2.12 mW
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
TO-78*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3)
RBE ≤ 10 Ω, IC = 10 mAdc V(BR)CER 80 Vdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc V(BR)CEO 60 Vdc
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 80 Vdc
ICBO
10
2.0
µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
VEB = 5.0 Vdc IEBO
10
2.0
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2060, 2N2060L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 100 µAdc, VCE = 5.0 Vdc
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
hFE
25
30
40
50
75
90
120
150
Collector-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc VCE(sat) 0.3 Vdc
Base-Emitter Saturation Voltage
IC = 50 mAdc, IB = 5.0 mAdc VBE(sat) 0.9 Vdc
DYNAMIC CHARACTERISTICS
Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz hfe 3 25
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz hib 20 30 Ω
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hfe 50 150
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hie 1,000 4,000 Ω
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz hoe 0 16 µmhos
Input Capacitance
VEB = 0.5 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 85 pF
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 15 pF
(3)Pulse Test: Pulse Width 250 to 350µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101
Page 2 of 2
