CAT6218
© Catalyst Semiconductor, Inc. 1 Doc. No. MD-10010 Rev. C
Characteristics subject to change without notice
300mA CMOS LDO Regulator
FEATURES
Guaranteed 300mA output current
Low dropout voltage of 180mV typical at 300mA
Stable with 1μF ceramic output capacitor
External 10nF bypass capacitor for low noise
Quick-start feature
No-load ground current of 55μA typical
Full-load ground current of 80μA typical
±1.0% initial accuracy (VOUT ≥ 2.0V)
±2.0% accuracy over temperature (VOUT ≥ 2.0V)
“Zero” current shutdown mode
Fold-back current limit and under-voltage
lockout
Thermal protection
Thin SOT23-5 package
APPLICATIONS
Cellular phones
Battery-powered devices
Consumer Electronics
DESCRIPTION
The CAT6218 is a 300mA CMOS low dropout
regulator that provides fast response time during load
current and line voltage changes.
The quick-start feature allows the use of an external
bypass capacitor to reduce the overall output noise
without affecting the turn-on time of just 150μs.
With zero shutdown current and low ground current of
55μA typical, the CAT6218 is ideal for battery-
operated devices with supply voltages from 2.3V to
5.5V. An internal under voltage lockout circuit disables
the output at supply voltages under 2.1V typical.
The CAT6218 offers 1% initial accuracy and low
dropout voltage, 180mV typical at 300mA. Stable
operation is provided with a small value ceramic
capacitor, reducing required board space and compo–
nent cost.
Other features include fold-back current current limit
and thermal protection.
The device is available in the low profile (1mm max
height) 5-lead thin SOT23 package.
PIN CONFIGURATION
TSOT-23 5-Lead
(1mm height)
VOU
T
EN
2
3
1
BYP
5
4
VIN
GND
Top View
TYPICAL APPLICATION CIRCUIT
For Ordering Information details, see page 9.
VIN
CAT6218
BYPEN
VOUT
GND
OFF ON
V
IN
1µF
2.3V
to 5.5V
C
IN
V
OUT
1µF
C
OUT
10nF
C
BYP
(Optional
)
CAT6218
Doc. No. MD-10010 Rev. C 2 © Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
PIN DESCRIPTIONS
Pin # Name Function
1 VIN Supply voltage input.
2 GND Ground reference.
3 EN
Enable input (active high); a 2.5MΩ
pull-down resistor is provided.
4 BYP
Optional bypass capacitor connection
for noise reduction and PSRR
enhancing.
5 VOUT LDO Output Voltage.
BLOCK DIAGRAM
Figure 2. CAT6218 Functional Block Diagram
PIN FUNCTION
VIN is the supply pin for the LDO. A small 1μF
ceramic bypass capacitor is required between the VIN
pin and ground near the device. When using longer
connections to the power supply, CIN value can be
increased without limit. The operating input voltage
range is from 2.3V to 5.5V.
EN is the enable control logic (active high) for the regu-
lator output. It has a 2.5MΩ pull-down resistor, which
assures that if EN pin is left open, the circuit is disabled.
VOUT is the LDO regulator output. A small 1μF cera-
mic bypass capacitor is required between the VOUT pin
and ground for stability. For better transient response,
its value can be increased to 4.7μF.
The capacitor should be located near the device. ESR
domain is 5mΩ to 500mΩ. VOUT can deliver a maxi-
mum guaranteed current of 300mA. For input-to-
output voltages higher than 1V, a continuous 300mA
output current might turn-on the thermal protection. A
250Ω internal shutdown switch discharges the output
capacitor in the no-load condition.
GND is the ground reference for the LDO. The pin
must be connected to the ground plane on the PCB.
BYP is the reference bypass pin. An optional 0.01μF
capacitor can be connected between BYP pin and
GND to reduce the output noise and enhance the
PSRR at high frequency.
ABSOLUTE MAXIMUM RATINGS (1)
Parameter Rating Unit
VIN 0 to 6.5 V
VEN, VOUT -0.3 to VIN + 0.3 V
Junction Temperature, TJ +150
°C
Power Dissipation, PD Internally Limited (2) mW
Storage Temperature Range, TS -65 to +150 °C
Lead Temperature (soldering, 5 sec.) 260 °C
ESD Rating (Human Body Model) 3 kV
RECOMMENDED OPERATING CONDITIONS (3)
Parameter Range Unit
VIN 2.3 to 5.5 V
VEN 0 to VIN V
Junction Temperature Range, TJ -40 to +125 °C
Package Thermal Resistance (SOT23-5), θJA 235 °C/W
Typical application circuit with external components is shown on page 1.
Notes:
(1) Exceeding maximum rating may damage the device
(2) The maximum allowable power dissipation at any TA (ambient temperature) is PDmax = (TJmax – TA)/θJA. Exceeding the maximum allowable
power dissipation will result in excessive die temperature, and the regulator will go into thermal shutdown.
(3) The device is not guaranteed to work outside its operating rating.
BYP
EN
GND
VIN
VOUT
V
IN
V
OUT
Shutdown
Switch
LDO
Reference
CAT6218
© Catalyst Semiconductor, Inc. 3 Doc. No. MD-10010 Rev. C
Characteristics subject to change without notice
ELECTRICAL OPERATING CHARACTERISTICS (1)
VIN = VOUT + 1.0V, VEN = High, IOUT = 100μA, CIN = COUT = 1µF, ambient temperature of 25ºC (over recommended
operating conditions unless specified otherwise). Bold numbers apply for the entire junction temperature range.
Symbol Parameter Conditions Min Typ Max Unit
-1.0 +1.0
VOUT-ACC Output Voltage Accuracy Initial accuracy for VOUT ≥ 2.0V (4)
-2.0 +2.0 %
TCOUT Output Voltage Temp. Coefficient 40 ppm/ºC
-0.2 ±0.1 +0.2
VR-LINE Line Regulation VIN = VOUT + 1.0V to 5.5V -0.4 +0.4 %/V
0.7 1.2
VR-LOAD Load Regulation IOUT = 100μA to 300 mA
1.5 %
180 250
VDROP Dropout Voltage (2) I
OUT = 300mA
300 mV
55 75
IOUT = 0μA
90
IGND Ground Current
IOUT = 300mA 80
μA
1
IGND-SD Shutdown Ground Current VEN < 0.4V
2 μA
f = 1kHz, CBYP = 10nF 64
PSRR Power Supply Rejection Ratio f = 20kHz, CBYP = 10nF 54 dB
ISC Output short circuit current limit VOUT = 0V 180 mA
TON Turn-On Time CBYP = 10nF 150 μs
eN Output Noise Voltage (3) BW = 10Hz to 100kHz 45 μVrms
ROUT-SH Shutdown Switch Resistance 250 Ω
REN Enable pull-down resistor 2.5 MΩ
VUVLO Under-voltage lock out (UVLO)
threshold 2.1 V
ESR COUT equivalent series resistance 5 500 mΩ
Enable Input
VIN = 2.3 to 5.5V 1.8
VHI Logic High Level VIN = 2.3 to 5.5V, 0ºC to
+125ºC junction temperature 1.6 V
VLO Logic Low Level VIN = 2.3 to 5.5V 0.4 V
VEN = 0.4V 0.15 1
IEN Enable Input Current VEN = VIN 1.5
4 μA
Thermal Protection
TSD Thermal Shutdown 160 ºC
THYS Thermal Hysteresis 10 ºC
Notes:
(1 Specification for 2.85V output version unless specified otherwise.
(2) Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value measured at
1V differential. During test, the input voltage stays always above the minimum 2.3V.
(3) Specification for 1.8V output version.
(4) For VOUT < 2.0V, the initial accuracy is ±2% and across temperature ±3%.
CAT6218
Doc. No. MD-10010 Rev. C 4 © Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
TYPICAL CHARACTERISTICS (shown for 2.85V output version)
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.
Dropout Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01.02.03.04.05.06.0
INPUT VOLTAGE [V]
OUTPUT VOLTAGE [V]
100μA
300mA
Line Regulation
2.82
2.83
2.84
2.85
2.86
2.87
2.5 3.0 3.5 4.0 4.5 5.0 5.5
INPUT VOLTAGE [V]
OUTPUT VOLTAGE [V]
Load Regulation
2.75
2.80
2.85
2.90
2.95
0 50 100 150 200 250 300
OUTPUT LOAD CURRENT [mA]
OUTPUT VOLTAGE [V]
Output Voltage vs. Temperature
2.82
2.83
2.84
2.85
2.86
2.87
-40 -10 20 50 80 110 140
TEMPERATURE [°C]
OUTPUT VOLTAGE [V]
Ground Current vs. Load Current
50
60
70
80
90
100
0 25 50 75 100 125 150
OUTPUT LOAD CURRENT [mA]
GROUND CURRENT [μA]
Ground Current vs. Temperature
45
50
55
60
65
-40 -10 20 50 80 110 140
TEMPERATURE [°C]
GROUND CURRENT [μA]
CAT6218
© Catalyst Semiconductor, Inc. 5 Doc. No. MD-10010 Rev. C
Characteristics subject to change without notice
TYPICAL CHARACTERISTICS (shown for 2.85V output option)
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.
Output Voltage vs. Load Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 100 200 300 400 500 600 700
OUTPUT LOAD CURRENT [mA]
OUTPUT VOLTAGE [V]
Ground Current vs. Input Voltage
0
10
20
30
40
50
60
70
0.0 1.0 2.0 3.0 4.0 5.0 6.0
INPUT VOLTAGE [V]
GROUND CURRENT [μA]
Dropout vs. Temperature (300mA Load)
100
150
200
250
300
350
-40 -10 20 50 80 110 140
TEMPERATURE [°C]
DROPOUT VOLTAGE [mV]
Dropout vs. Load Current
0
50
100
150
200
250
300
0 50 100 150 200 250 300
OUTPUT LOAD CURRENT [mA]
DROPOUT VOLTAGE [mV]
Enable Threshold vs. Input Voltage
0.0
0.4
0.8
1.2
1.6
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
INPUT VOLTAGE [V]
ENABLE THRESHOLD [V]
PSRR vs. Frequency (10mA Load)
0
10
20
30
40
50
60
70
80
0.01 0.1 1 10 100
FREQUENCY [kHz]
PSRR [dB]
C
BYP
= 0
C
BYP
= 10nF
CAT6218
Doc. No. MD-10010 Rev. C 6 © Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
TYPICAL CHARACTERISTICS (shown for 2.85V output option)
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.
PSRR (30mA Load)
0
10
20
30
40
50
60
70
0 100 200 300 400 500
VIN - VOUT [mV]
PSRR [dB]
100kHz
10kHz
1kHz
PSRR (200mA Load)
0
10
20
30
40
50
60
70
0 100 200 300 400 500
VIN - VOUT [mV]
PSRR [dB]
100kHz
10kHz
1kHz
CAT6218
© Catalyst Semiconductor, Inc. 7 Doc. No. MD-10010 Rev. C
Characteristics subject to change without notice
TRANSIENT CHARACTERISTICS (shown for 2.85V output option)
VIN = 3.85V, IOUT = 100μA, CIN = COUT = 1μF, CBYP = 10nF, TA = 25°C unless otherwise specified.
Note: All transient characteristics are generated using the evaluation board CAT621XEVAL1.
Enable Turn-On (100μA Load) Enable Turn-Off (100μA Load)
Enable Turn-On (300mA Load)
Enable Turn-Off (300mA Load)
Line Transient Response (3.85V to 4.85V)
Load Transient Response (0.1mA to 300mA)
CAT6218
Doc. No. MD-10010 Rev. C 8 © Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
PACKAGE OUTLINE DRAWING
5-LEAD TSOT-23 (1)(2)
Notes:
(1) All dimensions are in millimeters, angles in degrees.
(2) Refer JEDEC MO-193.
For current Tape and Reel information, download the PDF file from:
htt
p
://www.catsemi.com/documents/ta
p
eandreel.
p
df.
θ
E1 E
A2
A1
e
b
D
c
A
TOP VIEW
SIDE VIEW END VIEW
L1
LL2
SYMBOL MIN NOM MAX
A1.00
A1 0.01 0.05 0.10
A2 0.80 0.87 0.90
b 0.30 0.45
c 0.12 0.15 0.20
D 2.90 BSC
E 2.80 BSC
E1 1.60 BSC
e0.95TYP
L 0.30 0.40 0.50
L1 0.60 REF
L2 0.25 BSC
θ0º 8º
CAT6218
© Catalyst Semiconductor, Inc. 9 Doc. No. MD-10010 Rev. C
Characteristics subject to change without notice
EXAMPLE OF ORDERING INFORMATION (1)(2)(3)(5)
Notes:
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).
(2) The standard finish is NiPdAu.
(3) The device used in the above example is a CAT6218-180 TD-GT3 (VOUT = 1.8V, in an TSOT-23 package, NiPdAu, Tape and Reel, 3,000/Reel).
(4) Standard voltages are 1.8V, 2.4V, 2.7V, 3.0V, and 3.3V. For other voltage options, please contact your nearest Catalyst Semiconductor
Sales office.
(5) Top marking for CAT6218 is RU.
ORDERING INFORMATION
Part Number VOUT Voltage Package Quantity per Reel
CAT6218-150TD-GT3(4) 1.50V TSOT-23 3,000
CAT6218-180TD-GT3 1.80V TSOT-23 3,000
CAT6218-240TD-GT3 2.40V TSOT-23 3,000
CAT6218-250TD-GT3(4) 2.50V TSOT-23 3,000
CAT6218-270TD-GT3 2.70V TSOT-23 3,000
CAT6218-280TD-GT3(4) 2.80V TSOT-23 3,000
CAT6218-285TD-GT3(4) 2.85V TSOT-23 3,000
CAT6218-300TD-GT3 3.00V TSOT-23 3,000
CAT6218-320TD-GT3(4) 3.20V TSOT-23 3,000
CAT6218-330TD-GT3 3.30V TSOT-23 3,000
Prefix Device # Suffix
CAT 6218 -180 TD -G T3
Product Numbe
r
6218
V
OUT
V
oltage
(4)
150: 1.50V
180: 1.80V
240: 2.40V
250: 2.50V
270: 2.70V
280: 2.80V
285: 2.85V
300: 3.00V
320: 3.20V
330: 3.30V
Com
p
an
y
ID Package
TD: TSOT-23
Lead Finish
G: NiPdAu
Tape & Reel
T: Tape & Reel
3: 3,000/Reel
For Product Top Mark Codes, click here:
http://www.catsemi.com/techsupport/producttopmark.asp
REVISION HISTORY
Date Rev. Reason
06/19/2007 A Preliminary Revision
02/11/2008 B
Update Electrical Operating Characteristics
Update Package Outline Drawing
Change Document Number from MD-4010 to MD-10010
21-May-08 C
Add other voltage options
Add link to Top Mark Codes
Copyrights, Trademarks and Pat ents
© Catalyst Semiconductor, Inc.
Trademarks and registered trademarks of Catalyst Semiconductor include each of the following:
Adaptive Analog™, Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™, Quad-Mode™ and Quantum Charge Programmable™
Catalyst Semiconductor has been issued U. S. and foreign patents and has patent applications pending that protect its products.
CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS
PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE
RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING
OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.
Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where
personal injury or death may occur.
Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled
"Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.
Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical
semiconductor applications and may not be complete.
Catalyst Semiconductor, Inc.
Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054
Phone: 408.542.1000 Document No: MD-10010
Fax: 408.542.1200 Revision: C
www.catsemi.com Issue date: 05
/
21
/
08
