SCHOTTKY
BARRIER DIODE
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9627
Issue 1
Page 1 of 2
SML5082-2800CSM
High Breakdown Voltage (VBR = 70V)
Low Forward Voltage
Hermetic Ceramic Surface Mount Package
Suitable for Low Current, Fast Switching Applications.
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VBR Breakdown Voltage 70V
IF Forward Current 35mA
PD Total Power Dissipation at TA = 75°C 250mW
Derate Above 75°C 2mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA Thermal Resistance, Junction To Ambient 500 °C/W
SCHOTTKY
BARRIER DIODE
SML5082-2800CSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9627
Issue 1
Page 2 of 2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
VBR Breakdown Voltage IR = 10µA 70
IF = 1.0mA 0.41
IF = 15mA 1.0
VF
(1)
Forward Voltage
TA = -55°C 1.1
V
VR = 50V 200 nA
IR Reverse Current
TA = 150°C 200 µA
DYNAMIC CHARACTERISTICS
CT Capacitance VR = 0V f = 1.0MHz 2.2 2.5 pF
τ
(2)
Minority Carrier Lifetime IF = 5mA 100 ps
Notes
NotesNotes
Notes
(1) Pulse Width 300us, δ 2%
(2) By design only, not a production test.
MECHANICAL DATA
Dimensions in mm (inches)
2 1
0.51 ± 0.10
(0.02 ± 0.004) R0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.40
(0.055)
max.
0.31
(0.012)rad.
3
1.02 ± 0.10
(0.04 ± 0.004)
LCC1
(Underside View)
Pad 1 - Anode Pad 2 – N/C Pad 3 - Cathode