KVR16R11S8/4 - KINGSTON TECHNOLOGY

KVR16R11S8/4

4GB 1Rx8 512M x 72-Bit PC3-12800

CL11 Registered w/Parity 240-Pin DIMM

DESCRIPTION

This document describes ValueRAM's 512M x 72-bit (4GB)

DDR3-1600 CL11 SDRAM (Synchronous DRAM), registered w/

parity, 1Rx8 ECC, memory module, based on nine 512M x 8-bit

FBGA components. The SPD is programmed to JEDEC stan-

dard latency DDR3-1600 timing of 11-11-11 at 1.5V. This 240-

pin DIMM uses gold contact fingers. The electrical and me-

chanical specifications are as follows:

FEATURES

•JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

•VDDQ = 1.5V (1.425V ~ 1.575V)

•800MHz fCK for 1600Mb/sec/pin

•8 independent internal bank

•Programmable CAS Latency: 11, 10, 9, 8, 7, 6

•Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

•8-bit pre-fetch

•Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

•Bi-directional Differential Data Strobe

•Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

•On Die Termination using ODT pin

•On-DIMM thermal sensor (Grade B)

•Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

•Asynchronous Reset

•PCB : Height 1.180” (30.00mm), double sided component

Document No. VALUERAM1331-001.B00 11/20/13 Page 1

Memory Module Speciﬁ cations

SPECIFICATIONS

CL(IDD) 11 cycles

Row Cycle Time (tRCmin) 48.125ns (min.)

Refresh to Active/Refresh 260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin) 35ns (min.)

Maximum Operating Power 2.814 W*

UL Rating 94 V - 0

Operating Temperature 0o C to 85o C

Storage Temperature -55o C to +100o C

*Power will vary depending on the SDRAM and

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