APTGT50SK170TG Buck chopper Trench + Field Stop IGBT(R) Power Module Application * AC and DC motor control * Switched Mode Power Supplies NT C2 Q1 G1 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring E1 OUT 0/VBU S SENSE 0/VBUS SENSE VBUS E1 G1 0/VBUS 0/VBUS SENSE NT C1 Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant OUT OUT NTC2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25C Max ratings 1700 75 50 100 20 312 Tj = 125C 100A @ 1600V TC = 25C TC = 80C TC = 25C Unit V A July, 20061 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT50SK170TG - Rev 1 VBUS VCES = 1700V IC = 50A @ Tc = 80C APTGT50SK170TG All ratings @ Tj = 25C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Tf Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25C) VGE = 15V VBus = 900V IC = 50A R G = 10 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 50A R G = 10 VGE = 15V Tj = 125C VBus = 900V IC = 50A Tj = 125C R G = 10 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF Test Conditions Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 4400 180 150 370 40 Unit 250 2.4 A 6.5 400 V nA Max Unit VR=1700V ns 180 400 50 ns 800 300 16 mJ 15 Typ Max IF = 50A IF = 50A VR = 900V di/dt =800A/s www.microsemi.com Unit V Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C V pF 1700 DC Forward Current VF 2.0 2.4 5.8 Max 650 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 5.0 Typ 250 500 50 1.8 1.9 385 490 14 23 6 12 A A 2.2 V ns July, 20061 Symbol Characteristic C mJ 2-5 APTGT50SK170TG - Rev 1 Electrical Characteristics APTGT50SK170TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R 25 Max Unit k K Min Typ Max 0.4 0.7 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 3500 -40 -40 -40 2.5 C/W V 150 125 100 4.7 160 C N.m g July, 20061 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT50SK170TG - Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : APTGT50SK170TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 60 TJ=125C 60 40 40 20 20 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 VGE=9V 0 1 3 VCE (V) 4 5 50 V CE = 900V V GE = 15V RG = 10 T J = 125C TJ =25C 80 60 E (mJ) 40 T J=125C 40 TJ=125C 20 30 Eon Eoff 20 Er 10 0 0 5 6 7 8 9 10 11 12 0 13 20 Switching Energy Losses vs Gate Resistance 80 100 125 VCE = 900V VGE =15V IC = 50A TJ = 125C 100 Eon IC (A) 30 60 Reverse Bias Safe Operating Area 50 40 40 IC (A) V GE (V) 20 Eoff 75 50 V GE=15V T J=125C RG=10 25 10 Er 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 0.35 0.3 0.25 0.2 0.15 0 80 400 800 1200 1600 2000 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 70 IGBT 0.9 July, 20061 0 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT50SK170TG - Rev 1 E (mJ) 2 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) VGE =13V V GE=15V 0 0 Thermal Impedance (C/W) VGE=20V 80 IC (A) 80 IC (A) TJ = 125C T J=25C APTGT50SK170TG Forward Characteristic of diode VCE =900V D=50% RG=10 T J=125C T C=75C 25 20 ZVS 15 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 30 ZCS 10 hard switching 5 0 0 10 20 30 40 IC (A) 50 60 70 100 90 80 70 60 50 40 30 20 10 0 TJ =25C T J=125C TJ=125C 0 80 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.8 0.7 Diode 0.9 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT50SK170TG - Rev 1 July, 20061 rectangular Pulse Duration (Seconds)