SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4148
RECTRON
1N4148 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items S
y
mbol Ratings Unit
Reverse Voltage VR 75 V
Reverse Recovery
Time
trr 4 ns
Power Dissipation
3.33mW/°C
(
25°C
)
P 500 mW
Forward Current IF 150 mA
Junction Temp. Tj -65 to 175 °C
Storage Temp. Tstg -65 to 175 °C
Mechanical Data
Items Materials
Package DO-35
Case Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip Glass Passivated
Dimensions (DO-35)
DO-35
0.457
0.559
2.0
max.
4.2
max.
26 MIN
26 MIN
Dimensions in millimeters
DIA.
DIA.
Electrical Characteristics (Ta=25°C)
Ratings Symbol Ratings Unit
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
BV
75
100
V
Peak Forward Surge Current PW= 1sec. IFsurge 2.0 A
Maximum Forward Voltage
IF= 10mA
VF
1.0
V
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
IR
0.025
5.0
50
uA
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Cj
4
pF
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100W
trr
4
ns
