2007-05-29
1
BCR400W
Active Bias Controller
Characteristics
Supplies stable bias current even at low battery
voltage and extreme ambient temperature variatio
n
Low voltage drop of 0.7V
Application notes
Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
Ideal supplement for Sieget and other transistors
also usable as current source up to 5mA
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
12
3
4
EHA07188
4 3
21
Type Marking Pin Configuration Package
BCR400W W4s 1=GND/ENPN 2=Contr/BNPN 3VS4=Rext/CNPN SOT343
(ENPN, BNPN, CNPN are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter Symbol Value Unit
Source voltage VS18 V
Control current IContr. 10 mA
Control voltage VContr. 16 V
Reverse voltage between all terminals VR0.5
Total power dissipation, TS = 117 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS 100 K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
2007-05-29
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BCR400W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Additional current consumption
VS = 3 V
I0- 20 40 µA
Lowest stabilizing current
VS = 3 V
Imin - 0.1 - mA
DC Characteristics with stabilized NPN-Transistors
Lowest sufficient battery voltage
IB (NPN) < 0.5mA
VSmin - 1.6 - V
Voltage drop (VS - VCE)
IC = 25 mA
Vdrop - 0.65 -
Change of IC versus hFE
hFE = 50
IC/IC- 0.08 - hFE /
hFE
Change of IC versus VS
VS = 3 V
IC/IC- 0.15 - VS/VS
Change of IC versus TAIC/IC- 0.2 - %/K
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BCR400W
Collector current IC = f (hFE)
IC and hFE refer to stabilized NPN Transisto
r
Parameter Rext. ()
0 50 100 150 200 250 -350
hFE
-1
10
0
10
1
10
2
10
3
10
mA
IC
760
5.9
67
Collector Current IC = f (VS)
of stabilized NPN Transistor
Parameter Rext. ()
02468V11
VS
-1
10
0
10
1
10
2
10
3
10
mA
IC
2.1
5.9
12.4
67
760
4.3k
Voltage drop Vdrop = f (IC)
10 -2 10 -1 10 0 10 1 10 2 10 3
mA
IC
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
V2
Vdrop
Collector current IC = f (Rext.)
of stabilized NPN Transistor
10 0 10 1 10 2 10 3 10 4
Ohm
Rext.
-1
10
0
10
1
10
2
10
3
10
mA
IC
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BCR400W
Control current I = f (Rext.)
in current source application
10 -1 10 0 10 1 10 2 10 3
KOhm
Rext.
-1
10
0
10
1
10
mA
IContr.
Collector current TA = f (IC)
of stabilized NPN Transistor
Parameter: Rext.()
-40 -20 0 20 40 60 80 100 120 °C 160
TA
-1
10
0
10
1
10
2
10
3
10
mA
IC
2.2
6
26
65
290
760
4.3k
Control current I = f (VS)
in current source application
02468V11
VS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
mA
2.2
IContr.
Control current I = f (TA)
in current source application
-20 0 20 40 60 80 °C 110
TA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
mA
1.5
IContr.
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BCR400W
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Note that up to TS=115°C
it is not possible to exceed Ptot
respecting the maximum
ratings of VS and IContr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
Typical application for GaAs FET
with active bias controller
EHA07190
400BCR
4
3
1
2
+S
V
Rext
100 pF
VG
-
k100
100 k
1 nF
RF IN RF OUT
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BCR400W
RF transistor controlled by BCR400
EHA07217
VS
+
3
4
BCR 400
12
RF-Transistor
ext.
R
Ι
contr.
C
Ι
drop
V
C21
C
RF IN
RF OUT
Be aware that BCR400 stabilized
bias current of transistors in an active
control loop
In order to avoid loop ascillation
(hunting),
time constants must be chosen
adequately, i.e. C1 >= 10 x C2
RX/TX antenna switch, compatible to control logic
and working at wide battery voltage range
EHA07218
BCR 400
4
3
1
2+
S
V
R
ext
4λ/
TX RX
TX
RX
> 2.7 V
= 100 -220
Antenna
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BCR400W
Low voltage reference
EHA07219
BCR 400
4
3
1
2+S
V
VREF
Red
LED
Precision timer with BCR400
providing constant charge current
EHA07191
3
41
2
7
6
215
S
V+
84
3
Timer IC
(555)
R
ext
BCR 400
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BCR400W
Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2 ±0.1
0.9
12
34 A
+0.1
0.6 A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2007-05-29
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BCR400W
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
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For information on the types in question please contact your nearest
Infineon Technologies Office.
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systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.