RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.280 4LFL (SO51)
epoxy sealed
.1025 - 1150 MHz
.RUGGEDIZED VSWR ∞:1
.INTERNAL INPUT MATCHING
.LOW THERMAL RESISTANCE
.POUT = 4.0 W MIN. WITH 9.0 dB GAIN
DESCRIPTION
The MSC1004MP is a low-level Class C pulsed
transistor specifically designed for DME/IFF driver
or output applications.
These devices are capable of withstanding a ∞:1
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and auto-
matic bonding techniques ensure high reliability
and product consistency.
The MSC1004MP is housed in the IMPAC
package with internal input matching.
PIN CO NNECTION
BRANDING
1004MP
ORDER CODE
MSC1004MP
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 100°C) 18 W
ICDevice Current* 65 0 mA
VCC Collector-Suppl y Voltage* 32 V
TJJunction Temperature 20 0 °C
TSTG S torage Temperature − 65 to +150 °C
RTH(j-c) Junction-Case Thermal Resistance* 5 °C/W
*A ppli es only to rated RF amplifi er opera t ion
MSC1004MP
1. Collector 3. Emitter
2. Base 4. Base
THER MAL D A TA
June 1 2, 1995 1/3
ELECTRICAL SPECIFICATIONS (Tcase = 25 °C)
Symbol Test Conditions Value Unit
Min. Typ. Max.
POUT f = 102 5 − 1150 MHz PIN = 50 0 mW VCC = 28 V 4.0 —W
η
cf = 102 5 − 1150 MHz PIN = 50 0 mW VCC = 28 V 35 —%
G
Pf = 102 5 − 1150 MHz PIN = 50 0 mW VCC = 28 V 9.0 —dB
Note: Pulse Width = 10µSec
Duty Cy cle = 1%
STATIC
Symbol Test Conditions Value Unit
Min. Typ. Max.
BVCBO IC = 1 mA IE = 0 mA 45 — — V
BVCER IC = 5 mA RBE = 10 Ω45 — — V
BVEBO IE = 1 mA IC = 0mA 3.5 — — V
ICES VCE = 28 V — 1.0 mA
hFE VCE = 5 V IC = 200 mA 30 — 300 —
DYNAMIC
TEST CIRCUI T
All dimensions are in inches.
Ref.: Dwg. No. C12 7299
MSC1004MP
June 1 2, 1995 2/3
PACKAGE MECHANICAL DA TA
Ref.: Dwg. No. 12-02 17 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
suppo rt d ev ice s o r syste ms w ithou t ex pres s wr itten approval of SGS-THOMSON Microelectronics.
©1995 SGS-THOMSON Microelectronics - All Rights Reserv ed
SGS-THOMSON M icroelectronics GROUP OF COMPANIES
Austr alia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Mal ta - Moroc co - The Neth erlan ds -
Singapor e - Spa in - Sw eden - Switzerl and - Taiwan - Thailand - Un ited Kingdo m - U.S.A.
MSC1004MP
June 1 2, 1995 3/3
