2 3 4 1 2 1 Anti-Parallel APT2x30DQ60J 3 4 2 1 3 27 2 T- 4 SO Parallel APT2x31DQ60J "UL Recognized" ISOTOP (R) file # E145592 APT2x31DQ60J APT2x30DQ60J 600V 600V 30A 30A DUAL DIE ISOTOP(R) PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS * Anti-Parallel Diode * Ultrafast Recovery Times * Low Losses * Soft Recovery Characteristics * Low Noise Switching * Popular SOT-227 Package * Cooler Operation * Low Forward Voltage * Higher Reliability Systems * Uninterruptible Power Supply (UPS) * High Blocking Voltage * Increased System Power * Induction Heating * Low Leakage Current * High Speed Rectifiers * Avalanche Energy Rated -Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters * Snubber Diode All Ratings Per Diode: TC = 25C unless otherwise specified. MAXIMUM RATINGS Symbol VR Density Characteristic / Test Conditions APT2x31_30DQ60J UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 42 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 320 Operating and StorageTemperature Range 20 mJ -55 to 175 C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 1.8 2.2 IF = 60A 2.0 IF = 30A, TJ = 125C 1.3 VR = 600V Microsemi Website - http://www.microsemi.com Volts 25 VR = 600V, TJ = 125C 500 36 UNIT A pF 7-2008 VF Characteristic / Test Conditions 053-4203 Rev E Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C Maximum Reverse Recovery Current trr IRRM APT2x31_30DQ60J IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C Maximum Reverse Recovery Current MIN TYP MAX UNIT - 21 - 25 - 35 nC - 3 Amps - 160 ns - 480 nC - 6 Amps - 85 ns - 920 nC - 20 Amps MIN TYP ns THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) MAX UNIT 1.21 C/W Volts 2500 Package Weight 1.03 oz 29.2 g Maximum Mounting Torque 10 lb*in 1.1 N*m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1.20 D = 0.9 1.00 0.7 0.80 0.5 0.3 0.40 0.20 0 Note: PDM 0.60 t2 t 0.1 SINGLE PULSE 0.05 10 -5 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -4 7-2008 TJ (C) 053-4203 Rev E t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC TC (C) 0.320 0.515 0.375 Dissipated Power (Watts) 0.00278 0.0421 0.242 ZEXT Z JC, THERMAL IMPEDANCE (C/W) 1.40 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL TYPICAL PERFORMANCE CURVES 100 80 60 TJ = 125C 40 TJ = 175C 20 TJ = 25C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 1400 T = 125C J V = 400V R 1200 60A 1000 800 30A 600 400 15A 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 15A 100 80 60 40 25 T = 125C J V = 400V R 60A 20 15 30A 10 15A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change trr IRRM 0.8 0.6 trr 0.4 Duty cycle = 0.5 T = 175C J 70 Qrr 60 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 30A 120 0 1.0 50 40 30 Qrr 0.2 0.0 140 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1.4 1.2 R 60A 0 IRRM, REVERSE RECOVERY CURRENT (A) 0 T = 125C J V = 400V 160 20 TJ = -55C 0 APT2X31_30DQ60J 180 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 120 20 10 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 180 160 140 120 100 7-2008 80 60 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4203 Rev E CJ, JUNCTION CAPACITANCE (pF) 200 APT2x31_30DQ60J Vr diF /dt Adjust +18V APT6017LLL 0V D.U.T. 30H trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 053-4203 Rev E 7-2008 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Anti-parallel Parallel APT2x31DQ60J APT2x30DQ60J Anode 2 Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.