2SK3147(L), 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition Feb. 1999 Features * Low on-resistance R DS =0.1 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline DPAK-2 4 4 D 2 1 2 G 1 3 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3147(L),2SK3147(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current ID 5 A 20 A 5 A 5 A 2.5 mJ 20 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK3147(L),2SK3147(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS 100 -- -- V I D = 10mA, VGS = 0 V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) -- 0.1 0.13 I D = 3A, VGS = 10VNote4 resistance RDS(on) -- 0.13 0.18 I D = 3A, VGS = 4V Note4 Forward transfer admittance |yfs| 3.5 6 -- S I D = 3A, VDS = 10V Note4 Input capacitance Ciss -- 420 -- pF VDS = 10V Output capacitance Coss -- 185 -- pF VGS = 0 Reverse transfer capacitance Crss -- 100 -- pF f = 1MHz Turn-on delay time t d(on) -- 10 -- ns I D = 3A, VGS = 10V Rise time tr -- 35 -- ns RL = 10 Turn-off delay time t d(off) -- 110 -- ns Fall time tf -- 60 -- ns Body-drain diode forward voltage VDF -- 0.85 -- V I F = 5A, VGS = 0 Body-drain diode reverse recovery time t rr -- 85 -- ns I F = 5A, VGS = 0 diF/ dt =50A/s voltage Gate to source breakdown voltage Note: 4. Pulse test 3 2SK3147(L),2SK3147(S) Main Characteristics Power vs. Temperature Derating PW (1 sh ot ) c = ) C 25 Drain Current s (T 50 100 Case Temperature Ta = 25 C 150 1 200 Tc (C) 10 V Pulse Test 3.5 V (A) 4V ID 3V 2 Drain Current 6V 4 8 2 4 6 Drain to Source Voltage 10 20 50 100 200 500 Drain to Source Voltage V DS (V) 8 V DS (V) V DS = 10 V Pulse Test 6 4 Tc = 75C -25C 2 VGS =2.5 V 0 5 10 8 6 2 Typical Transfer Characteristics Typical Output Characteristics 10 I D (A) m 0.2 0 Drain Current 0 1 Operation in this area is 0.5 limited by R DS(on) 0.1 4 =1 n tio ra pe O Channel Dissipation C D 10 2 s s m I D (A) 0 s 10 10 5 20 10 30 20 1 Pch (W) Maximum Safe Operation Area 50 40 25C 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK3147(L),2SK3147(S) 2.0 1.5 0.5 ID=5A 1A 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.50 Pulse Test 0.40 1, 2 A 0.30 5A V GS = 4 V 5A 0.10 10 V 0 -40 0.2 VGS = 4 V 0.1 10 V 0.02 2A 0.20 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.05 1.0 0 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 1, 2 A 0 40 80 120 160 Case Temperature Tc (C) 0.01 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 2.5 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 Tc = -25 C 10 25 C 5 75 C 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK3147(L),2SK3147(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 di / dt = 50 A / s V GS = 0, Ta = 25 C 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 2000 1000 500 Ciss 200 Coss 100 50 Crss VGS = 0 f = 1 MHz 20 10 0.1 10 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 10 Dynamic Input Characteristics Drain to Source Voltage 120 V DS 80 40 0 6 16 V GS 12 8 V DD = 100 V 50 V 25 V 8 16 24 32 Gate Charge Qg (nc) 40 50 4 0 40 500 300 Switching Time t (ns) V DD = 100 V 50 V 25 V 160 V GS (V) ID=5A 30 Switching Characteristics 20 Gate to Source Voltage V DS (V) 200 20 Drain to Source Voltage V DS (V) t d(off) 100 tf 30 tr 10 t d(on) 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.3 3 1 Drain Current 10 I D (A) 30 100 2SK3147(L),2SK3147(S) Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 10 8 6 10 V 4 2 V GS = 0, -5 V 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.5 I AP = 5 A V DD = 50 V duty < 0.1 % Rg > 50 2.0 1.5 1.0 0.5 2.0 0 25 50 V SD (V) 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK3147(L),2SK3147(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C 0.02 1 0.0 0.03 t ho lse PDM Pu D= 1s PW T PW T 0.01 10 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3147(L),2SK3147(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 4.7 0.5 1.2 0.3 16.2 0.5 1.15 0.1 0.8 0.1 (0.7) 3.1 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) -- -- 0.42 g 9 2SK3147(L),2SK3147(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) -- Conforms 0.28 g 2SK3147(L),2SK3147(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) -- Conforms 0.28 g 11 2SK3147(L),2SK3147(S) Cautions 1. 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