2MBI200NB-120 IGBT Module 1200V / 200A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Continuous 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *2 Unit V V A A A A W C C V N*m N*m Rating 1200 20 200 400 200 400 1500 +150 -40 to +125 AC 2500 (1min.) 3.5 4.5 Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr t n o c Characteristics Min. Typ. Max. - - 2.0 - - 30 4.5 - 7.5 - - 3.3 - 32000 - - 11600 - - 10320 - - 0.65 1.2 - 0.25 0.6 - 0.85 1.5 - 0.35 0.5 - - 3.0 - - 0.35 Dis E2 C1 G1 E1 G2 Current control circuit . t c u d e u n i Electrical characteristics (at Tj=25C unless otherwise specified) Symbol C2E1 *1 : Recommendable value : 2.5 to 3.5 N*m(M5) or (M6) *2 : Recommendable value : 3.5 to 4.5 N*m(M6) Item Equivalent Circuit Schematic d o r p Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=200mA VGE=15V, IC=200A VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE=15V RG=4.7 ohm IF=200A, VGE=0V IF=200A mA A V V pF Conditions Unit IGBT Diode the base to cooling fin C/W C/W C/W s V s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*3 Characteristics Min. Typ. - - - - - 0.025 Max. 0.085 0.18 - *3 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ E2 IGBT Module 2MBI200NB-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=125C 500 500 400 400 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 300 200 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 VCE [V] 10 8 Collector-Emitter voltage : VCE [V] 200 100 100 Collector-Emitter voltage : 300 6 4 2 0 0 5 10 15 Di Gate-Emitter voltage : VGE [V] . t c u 6 4 d e u n i t n o c s 20 8 2 d o r p 0 25 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 10 0 100 200 300 400 Collector current : Ic [A] http://store.iiic.cc/ 0 100 200 Collector current : Ic [A] 300 400 IGBT Module 2MBI200NB-120 Dynamic input characteristics 25 800 20 1000 600 15 400 10 200 5 100 10 0 0 30 500 1000 1500 2000 0 2500 Gate charge : Qg [nC] Gate resistance : RG [ohm] Reverse recovery characteristics trr, Irr, vs. IF Forward current vs. Forward voltage VGE=0V 500 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] Collector current : -Ic [A] (Forward current : IF [A] ) 400 300 200 100 0 0 1 2 3 4 100 d e u n i t n o c s Di Emitter-Collector voltage VECD [V] (Forward voltage : VF [V]) . t c u d o r p 0 5 100 200 300 400 Forward current : IF [A] Reversed biased safe operating area < 15V, Tj < +VGE=15V, -VGE = = 125C, RG > = 4.7 ohm Switching loss vs. Collector current Vcc=600V, RG=4.7 ohm, VGE=15V 2000 1600 50 Collector current : Ic [A] Switching loss : Eon, Eoff, Err [mJ/cycle] 60 40 30 20 1200 800 400 10 0 0 0 100 200 300 400 0 Collector current : Ic [A] http://store.iiic.cc/ 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] 1200 Gate-Emitter voltage : VGE [V] Tj=25C 1000 Collector-Emitter voltage : VCE [V] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=600V, Ic=200A, VGE=15V, Tj=25C IGBT Module 2MBI200NB-120 Capacitance vs. Collector-Emitter voltage Tj=25C Transient thermal resistance Capacitance : Cies, Coes, Cres [nF] Thermal resistance : R th (j-c) [C/W] 100 0.1 0.01 1 0.001 0.001 10 0.01 0.1 0 1 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Pulse width : PW [sec.] Outline Drawings, mm Di d e u n i t n o c s . t c u d o r p mass : 370g http://store.iiic.cc/ 30 35