Type
BSS131
SIPMOS® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic level
• dv/dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Parameter Symbol Conditions Unit
Value
VDS 240 V
RDS(on),max 14 Ω
ID0.1 A
Product Summary
PG-SOT-23
Type Package Pb-free Tape and Reel Information Marking
BSS131 PG-SOT23 Yes H6327 SRs
Rev. 2.6 page 1 2012-03-29
Continuous drain current IDTA=25 °C 0.11 A
TA=70 °C 0.09
Pulsed drain current ID,pulse TA=25 °C 0.4
Reverse diode dv/dtdv/dtID=0.1 A, VDS=192 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD Class JESD22-A114-HBM Class 0
Power dissipation Ptot TA=25 °C 0.36 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 2.6 page 1 2012-03-29
BSS131
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RthJA - - 350 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 240 - - V
Gate threshold voltage VGS(th) VDS=0 V, ID=56 µA 0.8 1.4 1.8
Drain-source leakage current ID (off) VDS=240 V, VGS=0 V,
Tj=25 °C - - 0.01 µA
VDS=240 V, VGS=0 V,
Tj=150 °C --5
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 10 nA
Values
Rev. 2.6 page 2 2012-03-29
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=0.09 A - 9.07 20 Ω
VGS=10 V, ID=0.1 A - 7.7 14
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.08 A 0.06 0.13 - S
Rev. 2.6 page 2 2012-03-29
BSS131
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
Input capacitance Ciss -5877pF
Output capacitance Coss - 7.3 10
Reverse transfer capacitance Crss - 2.8 4.2
Turn-on delay time td(on) - 3.3 5.0 ns
Rise time tr- 3.1 4.6
Turn-off delay time td(off) - 13.7 20
Fall time tf- 64.5 97
Gate Charge Characteristics
Gate to source charge Qgs - 0.16 0.22 nC
Gate to drain charge Qgd - 0.8 1.2
Gate charge total Qg- 2.1 3.1
Gate plateau voltage Vplateau - 2.90 - V
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=120 V,
VGS=10 V, ID=0.1 A,
RG=6 Ω
VDD=192 V, ID=0.1 A,
VGS=0 to 10 V
Rev. 2.6 page 3 2012-03-29
Reverse Diode
Diode continous forward current IS- - 0.11 A
Diode pulse current IS,pulse - - 0.43
Diode forward voltage VSD VGS=0 V, IF=0.1 A,
Tj=25 °C - 0.81 1.2 V
Reverse recovery time trr - 42.9 64.3 ns
Reverse recovery charge Qrr - 22.6 34 nC
VR=120 V, IF=0.1 A,
diF/dt=100 A/µs
TA=25 °C
Rev. 2.6 page 3 2012-03-29
BSS131
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
0
0.1
0.2
0.3
0.4
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.02
0.04
0.06
0.08
0.1
0.12
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.6 page 4 2012-03-29
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
100 ms
30 µs
100 µs
1 ms
10 ms
DC
10-3
10-2
10-1
100
1 10 100 1000
ID[A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100101
100
101
102
103
ZthJA [K/W]
tp[s]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.02
0.04
0.06
0.08
0.1
0.12
0 40 80 120 160
ID[A]
TA[°C]
Rev. 2.6 page 4 2012-03-29
BSS131
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
2.3 V 2.7 V 3.3 V 3.9 V
4.5 V
5 V
7 V
10 V
5
7
9
11
13
15
17
19
21
23
25
0 0.1 0.2 0.3 0.4
RDS(on) [Ω]
ID[A]
2.3 V
2.7 V
3.3 V
3.9 V
4.5 V
5 V
7 V
10 V
0
0.1
0.2
0.3
0.4
01234567
ID[A]
VDS [V]
Rev. 2.6 page 5 2012-03-29
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
2.3 V 2.7 V 3.3 V 3.9 V
4.5 V
5 V
7 V
10 V
5
7
9
11
13
15
17
19
21
23
25
0 0.1 0.2 0.3 0.4
RDS(on) [Ω]
ID[A]
0
0.1
0.2
0.3
0.4
01234
ID[A]
VGS [V]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.0 0.1 0.2 0.3 0.4
gfs [S]
ID[A]
2.3 V
2.7 V
3.3 V
3.9 V
4.5 V
5 V
7 V
10 V
0
0.1
0.2
0.3
0.4
01234567
ID[A]
VDS [V]
Rev. 2.6 page 5 2012-03-29
BSS131
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.1 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=56 µA
parameter: ID
typ
98 %
0
10
20
30
40
50
-60 -20 20 60 100 140
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
-60 -20 20 60 100 140
VGS(th) [V]
Tj[°C]
Rev. 2.6 page 6 2012-03-29
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
10
20
30
40
50
-60 -20 20 60 100 140
RDS(on) [Ω]
Tj[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
-60 -20 20 60 100 140
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
103
0 102030
C[pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-3
10-2
10-1
100
0 0.4 0.8 1.2 1.6 2 2.4 2.8
IF[A]
VSD [V]
Rev. 2.6 page 6 2012-03-29
BSS131
13 Typ. gate charge 14 Drain-source breakdown voltage
VGS=f(Qgate); ID=0.1 A pulsed VBR(DSS)=f(Tj); ID=250 µA
parameter: VDD
200
210
220
230
240
250
260
270
280
290
300
-60 -20 20 60 100 140
VBR(DSS) [V]
Tj[°C]
48 V
120V
192 V
0
2
4
6
8
10
12
00.511.522.5
VGS [V]
Qgate [nC]
Rev. 2.6 page 7 2012-03-29
200
210
220
230
240
250
260
270
280
290
300
-60 -20 20 60 100 140
VBR(DSS) [V]
Tj[°C]
48 V
120V
192 V
0
2
4
6
8
10
12
00.511.522.5
VGS [V]
Qgate [nC]
Rev. 2.6 page 7 2012-03-29
BSS131
Packa
g
e Outline:
Footprint: Packaging:
Rev. 2.6 page 8 2012-03-29Rev. 2.6 page 8 2012-03-29
BSS131
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditio ns o r charac ter is tic s. With res pe c t to any ex ample s o r hints g iv en her e in, any typ ical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
inc lu d ing without limi ta t io n , w arrant i e s of non- infrin g e ment of int e ll ectual prop e rty r i g h ts
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in qu estion, please contact the nearest Infineon Tech nologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or pro tect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.6 page 9 2012-03-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditio ns o r charac ter is tic s. With res pe c t to any ex ample s o r hints g iv en her e in, any typ ical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
inc lu d ing without limi ta t io n , w arrant i e s of non- infrin g e ment of int e ll ectual prop e rty r i g h ts
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in qu estion, please contact the nearest Infineon Tech nologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or pro tect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.6 page 9 2012-03-29
