NTE67
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
DLower RDS(ON)
DImproved Inductive Ruggedness
DFast Switching Times
DLower Input Capacitance
DExtended Safe Operating Area
DImproved High Temperature Reliability
Absolute Maximum Ratings:
Drain–Source Voltage (TJ = +25°C to +150°C), VDSS 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR 400V. . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, VGS ±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Drain Current, ID
TC = +25°C 4.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 3.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 2), IDM 18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Gate Current, IGM ±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 3), EAS 290mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current, IAS 5.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.6W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/8” from case, 5sec max.), TL+300°C. . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.67K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RthJA 80K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS 0.24K/W
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, Vdd = 50V, RG = 25Ω, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 400 – – V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 –4.0 V
Gate–Source Leakage, Forward IGSS VGS = 20V – – 100 nA
Gate–Source Leakage, Reverse IGSS VGS = –20V – – –100 nA
Zero Gate Voltage Drain Current IDSS VDS = Max. Rating, VGS = 0V – – 250 µA
VDS = Max. Rating x 0.8, VGS = 0V,
TC = +125°C– – 1000 µA
On–State Drain–Source Current ID(on) VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1 4.5 – – A
Static Drain–Source On–State
Resistance RDS(on) VGS = 10V, ID = 3A, Note 1 –1.0 1.5 Ω
Forward Transconductance gfs VDS ≥ 50V, ID = 3A, Note 1 2.9 4.4 –mhos
Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz –780 –pF
Output Capacitance Coss –99 –pF
Reverse Transfer Capacitance Crss –43 –pF
Turn–On Delay Time td(on) VDD = 0.5BVDSS, ID = 5.5A, ZO = 12Ω–11 17 ns
Rise Time tr(MOSFET switching times are essentially
independent of operating temperature) –19 29 ns
Turn–Off Delay Time td(off)
independent of operating temperature) –37 56 ns
Fall Time tf–16 24 ns
Total Gate Charge
(Gate–Source Plus Gate–Drain) QgVGS = 10V, ID = 5.5A, VDS = 0.8 Max. Rating
(Gate charge is essentially independent of –18 30 nC
Gate–Source Charge Qgs operating temperature) –40 –nC
Gate–Drain (“Miller”) Charge Qgd –14 –nC
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Source–Drain Diode Ratings and Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Source Current (Body Diode) IS– – 4.5 A
Pulse Source Current (Body Diode) ISM Note 2 – – 18 A
Diode Forward Voltage VSD TC = +25°C, IS = 4.5A, VGS = 0V – – 1.6 V
Reverse Recovery Time trr TJ = +25°C, IF = 5.5A, dIF/dt = 100A/µs–310 660 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
