Document Number: 81472 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.3, 03-Nov-09 307
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
VSMG2700
Vishay Semiconductors
DESCRIPTION
VSMG2700 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 830 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 18 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8553
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMG2700 10 ± 60 830 20
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMG2700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2
VSMG2700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81472
308 Rev. 1.3, 03-Nov-09
VSMG2700
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
Note
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. figure 8, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 250 K/W
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21339 Tamb - Ambient Temperature (°C)
PV - Power Dissipation (mW)
RthJA = 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21340
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
IF = 1 A, tp = 100 μs VF2.3 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj125 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie61022mW/sr
IF = 1 A, tp = 100 μs Ie100 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe40 mW
Temperature coefficient of φeIF = 100 mA TKφe- 0.35 %/K
Angle of half intensity ϕ± 60 deg
Peak wavelength IF = 100 mA λp830 nm
Spectral bandwidth IF = 100 mA Δλ 40 nm
Temperature coefficient of λpIF = 100 mA TKλp0.25 nm/K
Rise time IF = 100 mA tr20 ns
Fall time IF = 100 mA tf20 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc18 MHz
Virtual source diameter d 0.44 mm
Document Number: 81472 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.3, 03-Nov-09 309
VSMG2700
High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
0.01 0.1 1 10
1
10
100
1000
10 000
tp - Pulse Length (ms)
100
95 9985
IF - Forward Current (mA)
DC
tp/T = 0.005
0.5
0.2
0.1
0.01
0.05
0.02
Tamb < 60 °C
18873_1
IF - Forward Current (mA)
1000
100
10
1
VF - Forward Voltage (V)
02413
t
p
= 100 µs
t
p
/T = 0.001
0.1
1
10
100
110
100 1000
18874
I
F
- Forward Pulse Current (mA)
I
e
- Radiant Intensity (mW/sr)
t
p
= 1 µs
740 800
λ- Wavelength (nm)
900
16972_1
0
0.25
0.5
0.75
1.0
1.25
Φe, rel - Relative Radiant Power
0.4 0.2 0
I
e, rel
- Relative Radiant Intensity
94 8013
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81472
310 Rev. 1.3, 03-Nov-09
VSMG2700
Vishay Semiconductors High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
20541
Mounting Pad Layout
1.2
2.6 (2.8)
1.6 (1.9)
4
4
area covered with
solder resist
3.5 ± 0.2
3 + 0.15
1.75 ± 0.1
0.9
2.8 ± 0.15
CA
Pin identification
2.2
Ø 2.4
technical drawings
according to DIN
specifications
Drawing-No.: 6.541-5067.01-4
Issue: 5; 04.11.08
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
Document Number: 81472 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.3, 03-Nov-09 311
VSMG2700
High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero Vishay Semiconductors
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
Fig. 9 - Blister Tape
Fig. 10 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
Fig. 11 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
Fig. 12 - Dimensions of Reel-GS08
Fig. 13 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
Adhesive tape
Component cavity
Blister tape
94 8670
1.85
1.65
4.0
3.6
3.6
3.4
2.05
1.95
1.6
1.4
4.1
3.9
4.1
3.9
5.75
5.25
8.3
7.7
3.5
3.1
2.2
2.0
0.25
94 8668
De-reeling direction
Tape leader
min. 75 empty
compartments
> 160 mm
40 empty
compartments
Carrier leader Carrier trailer
94 8158
180
178
4.5
3.5
2.5
1.5
13.00
12.75
63.5
60.5
14.4 max.
10.0
9.0
120°
94 8665
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
321
329
Identification
4.5
3.5
2.5
1.5
13.00
12.75
62.5
60.0
14.4 max.
10.4
8.4
120°
18857
Label:
Vishay
type
group
tape code
production
code
quantity
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
