BSX32 HIGH-VOLTAGE, HIGH-CURRENT SWITCH DESCRIPTION The BSX32 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is designed for high voltage, high current switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 65 V V CEO Collector-emitter Voltage (I B = 0) 40 V V EBO Emitter-base Voltage (I C = 0) 6 V IC Pt o t T s t g, T j October 1988 Collector Current Total Power Dissipation at T amb 25 C at T c as e 25 C Storage and Junction Temperature 1 mA 0.8 3.5 W W - 55 to 200 C 1/6 BSX32 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max C/W C/W 50 219 ELECTRICAL CHARACTERISTICS (T amb = 25 C unless otherwise specified) Symbol I CBO Parameter Collector Cutoff Current (I E = 0) Test Conditions Min. V CB = 50 V Typ. Max. Unit 0.25 4 A V (B R)CBO Collector-base Breakdown Voltage (I E = 0) I C = 100 A 65 V V (BR)CE O * Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA 40 V V (B R)E BO Emitter-base Breakdown Voltage (I C = 0) I E = 100 A 6 V V CE( sat )* Collector-emitter Saturation Voltage V BE( sat )* h F E* fT C EBO C CBO t o n ** t o f f** Base-emitter Saturation Voltage DC Current Gain I C = 100 mA I C = 500 mA I C = 1A I B = 10 mA I B = 50 mA I B = 100 mA 0.17 0.36 0.6 0.25 0.5 0.85 V V V I C = 100 mA I C = 500 mA IC = 1 A I B = 10 mA I B = 50 mA I B = 100 mA 0.8 0.9 1.5 2 V V V I C = 10 mA I C = 100 mA I C = 500 mA IC = 1 A V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 5 V T am b = - 55 C I C = 100 mA I C = 500 mA Transition Frequency I C = 50 mA f = 100 MHz V CE = 10 V Emitter-base Capacitance IC = 0 f = 1 MHz V EB = 0.5 V IE = 0 f = 1 MHz V CB = 10 V I C = 500 mA I B1 = 50 mA V CC = 30 V Collector-base Capacitance Turn-on Time Turn-off Time 2/6 60 90 60 60 30 15 45 35 150 400 I C = 500 mA V CC = 30 V I B1 = - I B 2 = 50 mA * Pulsed : pulse duration = 300 s, duty cycle = 1 %. ** See test circuit. 30 60 25 20 MHz 40 55 pF 6 10 pF 22 35 ns 40 60 ns BSX32 DC Current Gain. Collector-emitter Saturation Voltage. Base-emitter Saturation Voltage. Collector-base Capacitance. 3/6 BSX32 Test circuit for ton, toff. PULSE GENERATOR : tr, tf 1.0 ns PW 1.0 s ZIN = 50 DC < 2 % 4/6 TO OSCILLOSCOPE : tr < 1.0 ns ZIN 100 K BSX32 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 5/6 BSX32 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6