Collmer
Semiconductor
C
iss
(pf)
MOS-FET, High Voltage Diodes
Same Day Shipments For Product In Stock ALLIED
c
803
N-Channel Silicon Power MOS-FET
2SJ314-01L FAP-III Ð60 Ð5.0 20 0.480 0.300 750 300 53 270 K-PACK L
2SJ314-01S FAP-III Ð60 Ð5.0 20 0.480 0.300 750 300 53 270 K-PACK S
2SK2248-01L FAP-III 30 35.0 60 0.037 0.022 2630 1200 188 720 K-PACK L
2SK2248-01S FAP-III 30 35.0 60 0.037 0.022 2630 1200 188 720 K-PACK S
2SK2687-01 FAP-III 30 50.0 60 0.017 0.010 4130 1950 103 520 TO220
2SK2893-01 FAP-IIIB 30 100.0 150 0.007 0.004 9900 4950 260 1270 TO3P
2SK2900-01 FAP-IIIBH 60 45.0 60 Ñ 0.140 3450 1370 110 200 TO220
2SK2690-01 FAP-III 60 80.0 125 0.017 0.010 5250 1870 143 450 TO3P
2SK2906-01 FAP-IIIBH 60 100.0 150 Ñ 0.007 8100 3150 400 470 TO3P
2SK3270-01 Trench 60 80.0 135 Ñ 0.006 9000 1250 250 285 TO-220
2SK3271-01 Trench 60 100.0 155 Ñ 0.006 9000 1250 250 285 TO3P
2SK3216-01 FAP-IIIBH 100 45.0 80 Ñ 0.026 4800 1140 186 240 TO220
2SK3217-01MR FAP-IIIBH 100 50.0 70 Ñ 0.025 4800 1140 230 265 TO-220F15
2SK3218-01 FAP-IIIBH 150 35.0 80 Ñ 0.048 3900 800 158 270 TO220
2SK3219-01MR FAP-IIIBH 150 40.0 70 Ñ 0.043 3980 830 174 263 TO-220F15
2SK2521-01 FAP-II 200 18.0 50 Ñ 0.180 1650 330 150 150 TO220
2SK3262-01MR FAP-IIIB 200 20.0 45 0.15 0.100 2550 435 85 520 TO-220F15
2SK900 F-I250 12.0 80 Ñ 0.300 1800 300 75 260 TO220
2SK902 F-I250 30.0 150 Ñ 0.100 3900 900 200 1000 TO3P
2SK1017-01 F-II 450 20.0 150 Ñ 0.350 3300 480 375 740 TO3P
2SK2021-01 FAP-IIA 500 5.0 60 Ñ 1.600 1500 130 55 100 TO220
2SK2642-01MR FAP-IIS 500 15.0 50 Ñ 0.550 2100 380 220 230 TO220F15
2SK2757-01 FAP-IIS 500 10.0 80 Ñ 0.900 950 180 25 60 TO220
2SK725 F-I500 15.0 125 Ñ 0.380 4000 500 130 440 TO3P
2SK1941-01R FAP-IIA 600 16.0 100 Ñ 0.550 4950 470 165 420 TO3PF
2SK2646-01 FAP-II 800 4.0 80 Ñ 4.000 450 75 20 50 TO220
2SK956-01 FAP-II 800 9.0 150 Ñ 1.500 2100 300 425 690 TO3P
2SK2648-01 FAP-IIS 800 9.0 150 Ñ 1.500 1200 180 30 95 TO3P
2SK2654-01 FAP-IIS 900 8.0 150 Ñ 2.000 1200 180 30 95 TO3P
2SK2082-01 FAP-IIA 900 9.0 150 Ñ 1.400 3300 320 130 320 TO3P
2SK1986-01 FAP-II 1000 4.0 80 Ñ 3.600 1950 150 55 160 TO220
2SK2258-01 FAP-II 1000 4.0 100 Ñ 3.600 1950 150 55 160 TO3P
Ratings
R
DS(ON)
(½) (Max.)
Mfr.Õs Series
Type
Characteristics
Package
c
F-I Series = Low RDS(ON)
c
F-II Series = VGS ±30 V, Reduced Turn Off Time
c
FAP-II Series = High Avalanche Ruggedness
c
F-III Series = Logic Level, High g
fs
c
FAP-III = Logic Level, High Avalanche Ruggedness
c
FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
c
FAP-IIA = Reduced Turn Off Time
c
FAP-IIIBH = High Speed Non Logic
c
FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
t
on
(ns)
t
off
(ns)
C
oss
(pf)
V
DSS
(V)
I
D
(A)
P
D
(W) VGS=4V VGS=10V
ESJC30-08 12 300 15.0 16.0 10 Ñ
CS57-04A 4 25 1.0 15.0 1 2
CS54-08A 8 25 1.0 30.0 1 2
CS52-12A 12 10 0.5 45.0 1 1
CS52-14A 14 10 0.5 51.0 1 1
CS56-24 24 10 0.5 75.0 1 1
Notes: *Single phase; half sine wave in oil bath or filled epoxy at ambient temperature 25¡C. **
1
/
2
cycle, 60 Hz at full load. Reverse Recovery Time: ÒAÓ Type Ñ 80 nsec max. @ T
a
= 25¡C, I
F
= 2 mA, I
R
= 1 mA; Non ÒAÓ Type Ñ 100 nsec max. @ T
a
=
25¡C, I
F
= 2 mA, I
R
= 1 mA. Storage and Operating Junction Temperature, T
j
:Ð65¡C to +150¡C. Packaging: Bulk or tape and reel available (please specify).
Mfr.Õs
Type
Fast Recovery High Voltage Silicon Rectifiers
Repetitive
Peak Reverse
Voltage
V
RRM
Average
Forward
Current
I
o
*
Non-Repetitive
Peak Surge
Current
I
FSM
**
Maximum Forward
Voltage Drop
(at 1 mA, T
a
= 25¡C)
V
FM
Maximum Reverse
Current Repetitive
(at VRRM, T
a
= 25¡C)
I
RRM
kV mA A Volts µA
Maximum Junction
Capacitance
(at VRRM = 0V, T
a
= 25¡C)
@ 1 MHz
pF
13
