Three Phase Rectifier Bridges PSD 162 IdAVM = 175 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 162/08 PSD 162/12 PSD 162/14 PSD 162/16 PSD 162/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 175 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1950 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1600 1800 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 16200 16200 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 12800 13400 A2 s A2 s -40 ... + 150 150 -40 ... + 125 C C C 2500 3000 V V 5 5 270 Nm Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque Terminal connection torque typ. (M6) (M6) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM 0.3 5 VF VTO rT RthJC IF = 150 A T VJ = 25C 1.55 V 0.8 3 V m per Diode; DC current per module 0.65 0.108 K/W K/W RthJK per Diode; DC current per module 0.83 0.138 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 10.0 9.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Characteristic Value mA mA POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSD 162 300 IF(OV) -----IFSM I FSM (A) [A] TVJ=45C 250 TVJ=150C 1800 1.6 200 5 10 2 As 1600 1.4 TVJ=45C 4 10 1.2 150 TVJ=150C 1 100 0 VRRM Tvj = 150C 0.8 1/2 VRRM 50 Tvj = 25C IF 0.6 1 VRRM 3 10 0 0.5 1 VF [V] 1.5 0.4 2 10 Fig. 1 Forward current versus voltage drop per diode 600 [W] 0 10 1 t[ms] 10 2 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 1 2 3 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 70 TC PSD 162 75 0.08 0.04 500 = RTHCA [K/W] 0.12 80 85 200 DC [A] sin.180 90 95 400 105 300 110 115 0.37 DC sin.180 rec.120 rec.60 rec.30 100 PVTOT 0 120 125 130 0.87 135 75 Tamb 50 100 [K] 145 0 150 1 K/W Z thJK Z thJC 0.8 0.6 0.4 0.2 Z th t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 50 25 I dAV C 175 0 [A] 0.1 100 140 Fig. 4 Power dissipation versus direct output current and ambient temperature 0.01 rec.30 125 125 150 25 75 IFAVM rec.60 100 0.2 200 rec.120 150 50 100 150 200 T C (C) Fig.5 Maximum forward current at case temperature