IHW15N120R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: C *Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly *TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat *LowEMI *QualifiedaccordingtoJEDECfortargetapplications *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: *Inductivecooking *Inverterizedmicrowaveovens *Resonantconverters *Softswitchingapplications G C E KeyPerformanceandPackageParameters Type IHW15N120R3 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1200V 15A 1.48V 175C H15R1203 PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Datasheet 2 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DCcollectorcurrent,limitedbyTvjmax Tc=25C Tc=100C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A TurnoffsafeoperatingareaVCE1200V,Tvj175C - 45.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25C Tc=100C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 25 V PowerdissipationTc=25C PowerdissipationTc=100C Ptot 254.0 127.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+175 C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.59 K/W Diode thermal resistance, junction - case Rth(j-c) - - 0.59 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W Datasheet 3 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 1200 - - VGE=15.0V,IC=15.0A Tvj=25C Tvj=125C Tvj=175C - 1.48 1.70 1.80 1.70 - - 1.55 1.70 1.80 1.75 - Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25C Tvj=125C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 5.1 5.8 6.4 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25C Tvj=175C - - 100 2500 A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 13.9 - S Integrated gate resistor rG V none ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1165 - - 40 - - 32 - - 165.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=15.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 300 - ns - 46 - ns - 0.70 - mJ IGBTCharacteristic,atTvj=25C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Datasheet Tvj=25C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=14.6,RG(off)=14.6, L=180nH,C=39pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 4 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 370 - ns - 90 - ns - 1.25 - mJ IGBTCharacteristic,atTvj=175C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Datasheet Tvj=175C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=14.6,RG(off)=14.6, L=180nH,C=39pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 5 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries 50 100 TC=80 30 tp=1s IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 40 TC=110 20 10 20s 50s 200s 1ms 10ms 1 DC 10 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj175C,D=0.5,VCE=600V,VGE=15/0V, RG=14,6) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25C,Tj175C;VGE=15V) 300 40 30 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 250 200 150 100 20 10 50 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj175C) Datasheet 25 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 4. Collectorcurrentasafunctionofcase temperature (VGE15V,Tj175C) 6 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries 45 VGE=20V VGE=20V 17V 17V 15V 15V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 45 13V 30 11V 9V 7V 5V 15 0 0 1 2 13V 30 11V 9V 7V 5V 15 0 3 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25C) 3 4 3.0 IC=7.5A IC=15A IC=30A VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tvj=25C Tvj=175C IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175C) 45 30 15 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 2 4 6 8 10 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] Figure 7. Typicaltransfercharacteristic (VCE=20V) Datasheet 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 7 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries 1000 1000 td(off) tf t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf 100 10 0 5 10 15 20 25 100 10 30 10 20 IC,COLLECTORCURRENT[A] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175C,VCE=600V,VGE=0/15V, RG(on)=14,6,RG(off)=14,6,testcircuitin Fig. E) 50 7 100 25 50 typ. min. max. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] td(off) tf t,SWITCHINGTIMES[ns] 40 Figure 10. Typicalswitchingtimesasafunctionofgate resistance (ind.load,Tj=175C,VCE=600V,VGE=0/15V, IC=15A,testcircuitinFig.E) 1000 10 30 RG,GATERESISTANCE[] 75 100 125 150 6 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=600V,VGE=0/15V,IC=15A, RG(on)=14,6,RG(off)=14,6,testcircuitin Fig. E) Datasheet 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.4mA) 8 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries 2.5 1.6 Eoff 1.5 2.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff 1.5 1.0 0.5 0.0 1.4 1.3 1.2 1.1 0 5 10 15 20 25 1.0 30 10 20 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175C,VCE=600V,VGE=0/15V, RG(on)=14,6,RG(off)=14,6,testcircuitin Fig. E) 50 2.0 Eoff Eoff 1.8 E,SWITCHINGENERGYLOSSES[mJ] 1.2 E,SWITCHINGENERGYLOSSES[mJ] 40 Figure 14. Typicalswitchingenergylossesasa functionofgateresistance (ind.load,Tj=175C,VCE=600V,VGE=0/15V, IC=15A,testcircuitinFig.E) 1.3 1.1 1.0 0.9 0.8 1.6 1.4 1.2 1.0 0.7 0.6 30 RG,GATERESISTANCE[] 0.8 25 50 75 100 125 150 0.6 400 175 Tj,JUNCTIONTEMPERATURE[C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=600V,VGE=0/15V,IC=15A, RG(on)=14,6,RG(off)=14,6,testcircuitin Fig. E) Datasheet 500 600 700 800 900 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175C,VGE=0/15V,IC=15A, RG(on)=14,6,RG(off)=14,6,testcircuitin Fig. E) 9 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries 1.4 16 Tvj=25C Tvj=175C 240V 960V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 1.2 1.0 0.8 0.6 0.4 12 10 8 6 4 0.2 2 0.0 100 1000 0 1E+4 0 25 dv/dt,VOLTAGESLOPE[V/s] 50 75 100 125 150 175 QGE,GATECHARGE[nC] Figure 17. Typicalturnoffswitchingenergylossfor softswitching (indload,VCE=600V,VGE=15/0V,IC=15A, RG=14,6,testcircuitinFig.E) Figure 18. Typicalgatecharge (IC=15A) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 C,CAPACITANCE[pF] 1000 Cies Coes Cres 100 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 7 ri[K/W]: 4.6E-3 0.1431 0.2097 0.2185 0.01204762 1.9E-3 2.1E-4 i[s]: 2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402 10 0 10 20 30 0.001 1E-6 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 19. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Datasheet 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. IGBTtransientthermalimpedance (D=tp/T) 10 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries 1 45 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Tvj=25C Tvj=175C D=0.5 IF,FORWARDCURRENT[A] 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 30 15 i: 1 2 3 4 5 6 7 ri[K/W]: 4.6E-3 0.1431 0.2097 0.2185 0.012 1.9E-3 2.1E-4 i[s]: 2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 1 tp,PULSEWIDTH[s] 0 1 2 3 VF,FORWARDVOLTAGE[V] Figure 21. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 22. Typicaldiodeforwardcurrentasafunction offorwardvoltage 2.5 VF,FORWARDVOLTAGE[V] IF=7.5A IF=15A IF=30A 2.0 1.5 1.0 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 23. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Datasheet 11 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries Package Drawing PG-TO247-3 Datasheet 12 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 13 V2.5 2018-03-29 IHW15N120R3 ResonantSwitchingSeries RevisionHistory IHW15N120R3 Revision:2018-03-29,Rev.2.5 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2009-04-01 - 2.1 2009-05-27 - 2.2 2011-04-05 Pack. draw. rev. 05, marking update 2.3 2013-02-12 Layout change 2.4 2015-01-26 Minor changes 2.5 2018-03-29 Fig.12 and Fig.17 minor change of legend Datasheet 14 V2.5 2018-03-29 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie").Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseof theproductofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer'stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies'productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.