DSI30-12AS
Single Diode
Standard Rectifier
2/4
1
3
Part number
DSI30-12AS
Backside: cathode
FAV
F
VV1.25
RRM
30
1200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.29
R0.9 K/W
R
min.
30
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
130
P
tot
160 WT = 25°C
C
RK/W
30
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.60
T = 25°C
VJ
150
V
F0
V0.82T = °C
VJ
175
r
F
14.1 mΩ
V1.25T = °C
VJ
I = A
F
V
30
1.66
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
10
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
300
325
325
315
A
A
A
A
255
275
450
440
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
Ratings
Product M
a
r
k
i
n
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
yywwz
000000
Assembly Line
DSI30-12AC ISOPLUS220AC (2) 1200
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
175-40
DSI30-16AS
DSI30-16A
TO-263AB (D2Pak) (2)
TO-220AC (2)
1600
1600
DSI30-08AS
DSI30-08A
DSI30-08AC
TO-263AB (D2Pak) (2)
TO-220AC (2)
ISOPLUS220AC (2)
800
800
800
TO-263
(
D2Pak
)
Similar Part Package Voltage class
DSI30-12A TO-220AC (2) 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSI30-12AS 507511Tube 50DSI30-12ASStandard
threshold voltage V0.82
mΩ
V
0 max
R
0 max
slope resistance * 11
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
minmaxminmax
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim. Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
2/4
1
3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
0.001 0.01 0.1 1
100
150
200
250
23456789
011
0
100
200
300
400
500
0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
10
20
30
40
50
60
0102030
0
10
20
30
40
50
0 50 100 150 200
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
0 50 100 150 200
0
10
20
30
40
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
10.03 0.0004
2 0.08 0.002
3 0.2 0.003
40.39 0.03
50.2 0.29
T
VJ
= 25°C
T
VJ
=150°C
T
VJ
=45°C
50 Hz, 80% V
RRM
T
VJ
=45°C
T
VJ
= 150°C
V
R
=0V
T
VJ
= 125°C
150°C
R
thHA
:
0.6 K/W
0.8 K/W
1K/W
2K/W
4K/W
8K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
