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Wideband and Narrowband Amplifiers
Frequency: DC to 3.5 GHz
Output power (P3dB): 37 W at 3.5 GHz
Linear gain: >16 dB at 3.5 GHz
Operating voltage: 32 V
Low thermal resistance package
35 W, 32 V, DC - 3.5 GHz GaN RF Power Transistor35 W, 32 V, DC - 3.5 GHz GaN RF Power Transistor
Part # T1G4003532-FL
Discontinued
End of Life announced Jan. 20, 2014.
Last Time Buy August 1, 2014.
Please use T2G4003532-FL for new designs.
Contact your local sales representative for
assistance.
Key Features
Description
The TriQuint T1G4003532-FL is a 35 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The
device is constructed with TriQuint's proven 0.25 um process, which features advanced field plate techniques to
optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system
costs in terms of fewer amplifier line-ups and lower thermal management costs.
Specifications
FrequencyFrequency (GHz) DC to 3.5
Linear GainLinear Gain (dB) 17
P1dBP1dB (dBm)
PsatPsat (dBm) 45.7
NFNF (dB)
PAEPAE (%) 54
VoltageVoltage (V) 32
CurrentCurrent (mA) 150
Package StylePackage Style NI-360
RoHSRoHS Yes
Lead FreeLead Free Yes
Hal ogen FreeHal ogen Free Yes
Typical Applications
Additional Information
StatusStatus Discontinued
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