BC846CMTF - ON SEMICONDUCTOR

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BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor

BC846 / BC847 / BC848 / BC850 Rev. 1.9 1

August 2015

BC846 / BC847 / BC848 / BC850

NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Suitable for Automati c Insertion in Thick and Thin-film Circuits

• Low Noise: BC850

• Complement to BC856, BC857, BC858, BC859, and BC860

Ordering Information(1)

Note:

1. Affix “-A,-B,-C” means hFE clas sification. Affix “-M” mea ns SOT-23 packa ge. Affi x “-TF” means the t ape and ree l type

packing.

Part Number Marking Package Packing Method

BC846AMTF 8AA SOT-23 3L Tape and Reel

BC846BMTF 8AB SOT-23 3L Tape and Reel

BC846CMTF 8AC SOT-23 3L Tape and Reel

BC847AMTF 8BA SOT-23 3L Tape and Reel

BC847BMTF 8BB SOT-23 3L Tape and Reel

BC847CMTF 8BC SOT-23 3L Tape and Reel

BC848BMTF 8 CB SOT-23 3L Tape and Reel

BC848CMTF 8CC SOT-23 3L Tape and Reel

BC850AMTF 8EA SOT-23 3L Tape and Reel

BC850CMTF 8EC SOT-23 3L Tape and Reel

1. Base 2. Emitter 3. Collector

SOT-23

BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor

BC846 / BC847 / BC848 / BC850 Rev. 1.9 2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Thermal Characteristics(2)

Values are at TA = 25°C unless otherwise noted.

Note:

2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Symbol Parameter Value Unit

VCBO Collector-Base Voltage BC846 80 VBC847 / BC850 50

BC848 30

VCEO Collector-Emitter Voltage BC846 65 VBC847 / BC850 45

BC848 30

VEBO Emitter-Base Voltage BC846 / BC847 6 V

BC848 / BC850 5

ICCollector Current (DC) 100 mA

TJJunction Temperat ure 150 °C

TSTG Storage Temperature Range -65 to +150 °C

Symbol Parameter Value Unit

PDPower Dissipation 310 mW

Derate Above 2 5°C2.48mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W

BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor

BC846 / BC847 / BC848 / BC850 Rev. 1.9 3

Electrical Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%

hFE Classification

Symbol Parameter Conditions Min. Typ. Max. Unit

ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA

hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800

VCE(sat) Collector-Emitter Saturation

Voltage IC = 10 mA, IB = 0.5 mA 90 250 mV

IC = 100 mA, IB = 5 mA 200 600

VBE(sat) Collector-Base Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 mV

IC = 100 mA, IB = 5 mA 900

VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 2 mA 580 660 700 mV

VCE = 5 V, IC = 10 mA 720

fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,

f = 100 MHz 300 MHz

Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF

Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF

NF Noise

Figure

BC846 / BC847 / BC848 VCE = 5 V, IC = 200 μA,

RG = 2 kΩ, f = 1 kHz 2.0 10.0

BC850 1.2 4.0

BC850 VCE = 5 V, IC = 200 μA,

RG = 2 kΩ, f = 30 to 15000 Hz 1.4 3.0

Classification A B C

hFE 110 ~ 220 200 ~ 450 420 ~ 800

BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor

BC846 / BC847 / BC848 / BC850 Rev. 1.9 4

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Currector-Emitter Saturation Voltage Figure 4. Currector-Emitt er Saturation Voltage

Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage

0 4 8 121620

100

IB = 50μA

IB = 100μA

IB = 150μA

IB = 200μA

IB = 250μA

IB = 300 μA

IB = 350μA

IB = 400μA

IC[mA], COLLECTOR CURRENT

VCE[V], COLL ECTOR-EMITTE R VOLTAGE

0.1 1 10 100 1000

100

1000

TA = 150 oC

TA = 25 oC

VCE = 5V

hFE, DC CURRENT GAIN

IC [mA], COLLECTOR CURRENT

TA = -55 oC

0.1 1 10 100 1000

0.01

0.1

TA = 150oC

TA = -55oC

IC = 10IB

VCE(SAT) [V], COLLECTOR-EMITTER

SATURATION VOLTAGE

IC [mA], COLLECTOR CURRENT

TA = 25oC

0.1 1 10 100 1000

0.01

0.1

TA = 150oC

TA = -55oC

IC = 20IB

VCE(SAT) [V], COLLECTOR-EMITTER

SATURATION VOLTAGE

IC [mA], COLLECTOR CURRENT

TA = 25oC

0.1 1 10 100 1000

0.2

0.4

0.6

0.8

1.0

1.2

TA = 150oC

TA = -55oC

IC = 10IB

VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE

IC [mA], COLLECTOR CURRENT

TA = 25oC

0.1 1 10 100 1000

0.2

0.4

0.6

0.8

1.0

1.2

TA = 150oC

TA = -55oC

IC = 20IB

VBE(SAT) [V], BASE-EMITTER SATU RATION VOLTAGE

IC [mA], COLLECTOR CURRENT

TA = 25oC

BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor

BC846 / BC847 / BC848 / BC850 Rev. 1.9 5

Typical Performance Characteristics (Continued)

Figure 7. Base-Emitter On Voltage Figure 8. Collector Output Capacitance

Figure 9. Current Gain Bandwidth Product

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

100

TA = 150oCTA = -55oC

VCE = 5V

IC [mA], COLLECTOR CURRENT

VBE(ON) [V], BASE-EMITTER ON VOLTAGE

TA = 25oC

1 10 100 1000

0.1

100

f=1MHz

Cob[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 100

100

1000

VCE=5V

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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