SiSH402DN www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PowerPAK(R) 1212-8SH * TrenchFET(R) power MOSFET D D 8 D 7 D 6 5 * 100 % Rg and UIS tested * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 0.9 mm 3.3 mm 1 1 2 S 3 S 4 S G m .3 m 3 Top View APPLICATIONS D * DC/DC converter - Notebook - POL Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration G 30 0.0060 0.0080 12 35 Single S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH402DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 C) Pulsed drain current Avalanche current Avalanche energy TC = 25 C TC = 70 C TA = 25 C TA = 70 C L = 0.1 mH TC = 25 C Continuous source-drain diode current TA = 25 C TC = 25 C TC = 70 C Maximum power dissipation TA = 25 C TA = 70 C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e SYMBOL LIMIT VDS VGS 30 20 35 a, g 35 g 19 b, c 15 b, c 70 35 61 43 3.2 b, c 52 33 3.8 b, c 2 b, c -55 to +150 260 ID IDM IAS EAS IS PD TJ, Tstg UNIT V A mJ A W C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum junction-to-ambient b, f t 10 s RthJA 24 33 Maximum junction-to-case (drain) Steady state RthJC 1.9 2.4 UNIT C/W Notes a. Based on TC = 25 C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 C/W g. Package limited S18-0697-Rev.B, 09-Jul-2018 Document Number: 75897 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH402DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 A 30 - - V - 24 - - -6 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 A mV/C VGS(th) VDS = VGS , ID = 250 A 1.15 - 2.2 V Gate-source leakage IGSS VDS = 0 V, VGS = 20 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 30 V, VGS = 0 V - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 C - - 5 VDS 5 V, VGS = 10 V 50 - - A VGS = 10 V, ID = 19 A - 0.0048 0.0060 VGS = 4.5 V, ID = 16.6 A - 0.0064 0.0080 VDS = 15 V, ID = 19 A - 82 - - 1700 - - 350 - - 140 - - 28 42 A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 19 A pF - 12 21 VDS = 15 V, VGS = 4.5 V, ID = 19 A - 5.4 - - 4.6 - f = 1 MHz - 1.2 2.4 - 25 40 - 20 30 - 25 40 tf - 15 25 td(on) - 12 20 - 10 15 - 25 40 - 10 15 - - 30 - - 70 - 0.8 1.2 V - 25 50 ns - 17 35 nC - 13 - - 12 - td(on) tr td(off) tr td(off) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tf nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 C IS = 10 A, VGS = 0 V IF = 10 A, di/dt = 100 A/s, TJ = 25 C A ns Notes a. Pulse test: pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0697-Rev.B, 09-Jul-2018 Document Number: 75897 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH402DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 70 10 VGS = 10 V thru 4 V TC = -55 C 60 I D - Drain Current (A) I D - Drain Current (A) 8 50 40 30 20 VGS = 3 V 6 TC = 25 C 4 2 TC = 125 C 10 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 2100 0.010 Ciss 1800 0.008 1500 C - Capacitance (pF) R DS(on) - On-Resistance () 1.0 VGS = 4.5 V 0.006 VGS = 10 V 1200 900 Coss 600 0.004 300 Crss 0.002 0 0 10 20 30 40 50 60 70 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 30 1.8 R DS(on) - On-Resistance (Normalized) VDS = 15 V ID = 19 A VGS - Gate-to-Source Voltage (V) 5 8 6 VDS = 24 V 4 2 0 ID = 19 A 1.6 1.4 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0.6 0 6 12 18 24 30 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature S18-0697-Rev.B, 09-Jul-2018 Document Number: 75897 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH402DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 0.015 100 TJ = 25 C TJ = 150 C 10 1 0.0 R DS(on) - On-Resistance () I S - Source Current (A) ID = 19 A 0.012 0.009 TJ = 125 C 0.006 TJ = 25 C 0.003 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.4 50 2.2 40 ID = 250 A Power (W) V GS(th) (V) 2.0 1.8 1.6 30 20 1.4 10 1.2 1.0 0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (C) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 IDM limited Limited by RDS(on) (1) 100 s I D - Drain Current (A) 10 1 ms ID(on) limited 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 C Single pulse 0.01 0.1 (1) DC BVDSS limited 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0697-Rev.B, 09-Jul-2018 Document Number: 75897 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH402DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 80 60 50 40 40 Power (W) I D - Drain Current (A) 60 Package Limited 30 20 20 10 0 0 0 25 50 75 100 TC - Case Temperature (C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0697-Rev.B, 09-Jul-2018 Document Number: 75897 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH402DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = RthJA = 65 C/W 3. T JM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75897. S18-0697-Rev.B, 09-Jul-2018 Document Number: 75897 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix D4 PowerPAK(R) 1212-8, (Single / Dual) W H E2 E4 L K M e 1 Z D5 D D2 2 2 D1 8 1 5 4 4 b 3 L1 E3 A1 Backside view of single pad H 2 E1 E Detail Z L K E2 E4 D2 D3(2x) D4 c A H 1 D1 2 K1 Notes 1. Inch will govern 2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs D2 3 4 b D5 E3 Backside view of dual pad DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 typ. D5 2.3 typ. 0.0185 typ 0.090 typ E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.034 typ. 0.013 typ. e 0.65 BSC 0.026 BSC K 0.86 typ. K1 0.35 - 0.034 typ. - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0 - 12 0 - 12 W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: S16-2667-Rev. M, 09-Jan-17 DWG: 5882 Revison: 09-Jan-17 Document Number: 71656 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK(R) 1212-SWLH 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 7 8 2 1 L K E E1 K1 2x 0.10 C 2x e b 4 3 Backside view 0.10 C A C A1 A3 0.08 C DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0 - 0.05 0 - 0.002 A3 0.20 ref. 0.008 ref. b 0.30 BSC 0.012 BSC D 3.30 BSC 0.130 BSC D1 2.15 E E1 2.25 2.35 0.084 3.30 BSC 1.60 e 1.70 0.088 0.092 0.130 BSC 1.80 0.063 0.067 0.65 BSC 0.026 BSC 0.030 typ. K 0.76 typ. K1 0.41 typ. 0.016 typ. L 0.43 BSC 0.017 BSC Z 0.525 typ. 0.021 typ. 0.071 ECN: C18-0001-Rev. A, 15-Jan-18 DWG: 6062 Revision: 15-Jan-18 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK(R) 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000