PTMA180402EL
PTMA180402FL
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 12 Rev. 09.1, 2013-07-30
PTMA180402EL
Package H-33265-8
Wideband RF LDMOS Integrated Power Amplifier
40 W, 1800 – 2000 MHz
Description
The PTMA180402EL and PTMA180402FL are matched, wideband
40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all
typical modulation formats from 1800 to 2000 MHz. These devices
are offered in thermally-enhanced ceramic packages for cool and
reliable operation.
Features
• Designed for wide RF and modulation bandwidths
and low memory effects
• On-chip matching, integrated input DC block,
50-ohm input and > 5-ohm output
• Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 4 W
- Linear gain = 30 dB
- Efficiency = 14%
- Adjacent channel power = –53 dBc
• Typical 2-tone performance, 1960 MHz, 28 V
- Output power (PEP) = 50 W at IM3 = –30 dBc
- Efficiency = 33%
• Capable of handling 10:1 VSWR @ 28 V, 40 W
(CW) output power
• Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
• High-performance, thermally-enhanced packages,
Pb-free and RoHS compliant, with solder-friendly
plating
*See Infineon distributor for future availability.
PTMA180402FL
Package H-34265-8
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
1700 1800 1900 2000 2100 2200
Return Loss (dB)
Gain (dB)
Frequency (MHz)
Broadband Performance
VDD = 28 V, IDQ1 = 110 mA, IDQ1 = 330 mA
Gain
Return Loss
PTMA180402EL
PTMA180402FL
Data Sheet 2 of 12 Rev. 09.1, 2013-07-30
RF Characteristics
CDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA, POUT = 4 W average, ƒ = 1960 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 28.5 30 — dB
Drain Efficiency ηD 13 14 — %
Adjacent Channel Power Ratio ACPR — –53 –50 dBc
DC Characteristics
Stage 1 Characteristics Conditions Symbol Min Typ Max Unit
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 1.6 — Ω
Operating Gate Voltage VDS = 28 V, IDQ = 160 mA VGS 2.0 2.5 3.0 V
Stage 2 Characteristics Conditions Symbol Min Typ Max Unit
Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.21 — Ω
Operating Gate Voltage VDS = 28 V, IDQ = 330 mA VGS 2.0 2.5 3.0 V
Data Sheet 3 of 12 Rev. 09.1, 2013-07-30
PTMA180402EL
PTMA180402FL
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Operating Voltage VDD 24 to 28 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Overall Thermal Resistance (TCASE = 70°C) 1st Stage RθJC 5.0 °C/W
POUT = 40 W, IDQ1 = 160 mA, IDQ2 = 330 mA 2nd Stage RθJC 1.1 °C/W
Ordering Information
Type and Version Package Type Package Description Shipping
PTMA180402EL V1 H-33265-8 Themally-enhanced, slotted flange Tray
PTMA180402EL V1 R50 H-33265-8 Themally-enhanced, slotted flange Tape
PTMA180402FL V1 H-34265-8 Themally-enhanced, earless flange Tray
PTMA180402FL V1 R50 H-34265-8 Themally-enhanced, earless flange Tape
Typical Performance (data taken in a production test fixture)
0
10
20
30
40
50
27
28
29
30
31
32
30 35 40 45 50
Gain (dB)
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 330 mA
Gain
Efficiency
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
Power Added Efficiency (%)
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
5
10
15
20
25
30
35
40
30 35 40 45
IMD3 (dBc)
PAE (%)
Output Power, avg. (dBm)
Two-tone at Selected Frequencies
VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 330 mA
Efficiency
IMD3
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
PTMA180402EL
PTMA180402FL
Data Sheet 4 of 12 Rev. 09.1, 2013-07-30
Typical Performance (cont.)
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-30 -10 10 30 50 70 90
Normalized Gate – Source Voltage
(threshold), V
Temperature (°C)
Gate – Source Voltage vs. Temperature
VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA
Slope = –1.3 mV/°C
0
5
10
15
20
25
-65
-60
-55
-50
-45
-40
-35
0 2 4 6 8 10
ACPR (dBc)
Output Power (W)
IS-95 at Selected Frequencies
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA
ACPR
Efficiency
Power Added Efficiency (%)
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
-65
-60
-55
-50
-45
-40
-5
5
15
25
35
0 2 4 6 8 10
Gain (dB),
Power Added Efficiency (%)
Output Power, avg. (W)
IS-95 at Selected Temperatures
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA,
ƒ = 1960 MHz
Gain
PAE
+25ºC
–25ºC
+90ºC
ACPR
Adj. Ch. Power Ratio (dBc)
0
5
10
15
20
25
-55
-50
-45
-40
-35
-30
1 3 5 7 9 11
ACPR (dBc)
Output Power (W)
WCDMA Performance
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA,
Test Mode 1 w/64 DPCH, PAR = 7.5 dB
ACPR
Efficiency
Power Added Efficiency (%)
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
Data Sheet 5 of 12 Rev. 09.1, 2013-07-30
PTMA180402EL
PTMA180402FL
Typical Performance (cont.)
0
1
2
3
0
5
10
15
20
25
30
30 32 34 36 38 40 42 44
EVM RMS (average %) .
Drain Efficiency (%)
Output Power (dBm)
EDGE EVM Performance
VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA,
ƒ = 1960 MHz
EVM
Efficiency
0
5
10
15
20
25
-55
-50
-45
-40
-35
-30
31 32 33 34 35 36 37 38 39
Efficiency (%)
ACPR (dBc)
Output Power (dBm)
Six-carrier TD-SCDMA Drive-up
VDD = 28 V, IDQ1 = 230 mA, IDQ2 = 335 mA,
ƒ = 2017.5 MHz
Adj Lower
Adj Upper
Alt Lower
Alt Upper
Effciency
0
8
16
24
32
40
-85
-75
-65
-55
-45
-35
30 32 34 36 38 40 42 44
Efficiency (%)
ACPR (dB) .
Output Power (dBm)
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ! = 160 mA, IDQ2 = 330 mA,
ƒ = 1960 MHz
600 kHz
400 kHz
Efficiency
PTMA180402EL
PTMA180402FL
Data Sheet 6 of 12 Rev. 09.1, 2013-07-30
Broadband Circuit Impedance
Z0 = 50 Ω
Frequency Z Load Ω
MHz R jX
1700 8.89 –3.62
1800 7.27 –2.99
1900 6.26 –2.13
2000 5.59 –1.19
2100 5.14 –0.27
2200 4.89 0.67
Data Sheet 5 of 11 Rev. 08, 2009-08-31
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Six-carrier TD-SCDMA Drive-up
VDD = 28 V, IDQ1 = 230 mA, IDQ2
= 335 mA,
ƒ = 2017.5 MHz
-55
-50
-45
-40
-35
-30
31 32 33 34 35 36 37 38 39
Output Power (dBm )
ACPR (dBc)
0
5
10
15
20
25
Efficiency (%)
Adj Low er
Adj Upper
Alt Low er
Alt Upper
Effciency
Broadband Circuit Impedance
Frequency Z Load Ω
MHz R jX
1700 8.89 –3.62
1800 7.27 –2.99
1900 6.26 –2.13
2000 5.59 –1.19
2100 5.14 –0.27
2200 4.89 0.67
0.1
0.3
0.5
0.2
0.4
0.1
-
W
AV
E
LE
N
GT
H
S
T
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
1700 MHz
2200 MHz
Z Load
Z0 = 50 Ω
Z Load
D
S
IN
Data Sheet 7 of 12 Rev. 09.1, 2013-07-30
PTMA180402EL
PTMA180402FL
Reference Circuit
Reference circuit schematic for ƒ = 1930 – 1990 MHz
Circuit Assembly Specifications
DUT PTMA180402EL or PTMA180402FL LDMOS Integrated Power Amplifier
Test Fixture Part No. LTN/PTMA180402EFL
PCB Rogers 4350, 0.76 mm [.030"] thick, 1 oz. copper, εr = 3.48
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Microstrip Electrical Characteristics at 1960 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)
1 0.224 λ, 49.8 Ω 20.75 x 1.70 0.817 x 0.067
2 0.022 λ, 10.4 Ω 1.85 x 13.00 0.073 x 0.512
3 0.027 λ, 10.4 Ω 2.26 x` 13.00 0.089 x 0.512
4 0.035 λ, 34.1 Ω 3.18 x 3.00 0.125 x 0.118
5 0.048 λ, 34.1 Ω 4.29 x 3.00 0.169 x 0.118
6 0.153 λ, 44.5 Ω 14.07 x 2.03 0.554 x 0.080
7 0.046 λ, 49.8 Ω 4.27 x 1.70 0.168 x 0.067
8, 9 0.136 λ, 61.1 Ω 12.83 x 1.19 0.505 x 0.047
Data Sheet 7 of 12 Rev. 09, 2011-12-13
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 1930 – 1990 MHz
Circuit Assembly Specifications
DUT PTMA180402EL or PTMA180402FL LDMOS Integrated Power Amplifi er
Test Fixture Part No. LTN/PTMA180402EFL
PCB Rogers 4350, 0.76 mm [.030"] thick, 1 oz. copper, εr = 3.48
Find Gerber fi les for this test fi xture on the Infi neon Web site at http://www.infi neon.com/rfpower
Microstrip Electrical Characteristics at 1960 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)
1 0.224 λ, 49.8 Ω 20.75 x 1.70 0.817 x 0.067
2 0.022 λ, 10.4 Ω 1.85 x 13.00 0.073 x 0.512
3 0.027 λ, 10.4 Ω 2.26 x` 13.00 0.089 x 0.512
4 0.035 λ, 34.1 Ω 3.18 x 3.00 0.125 x 0.118
5 0.048 λ, 34.1 Ω 4.29 x 3.00 0.169 x 0.118
6 0.153 λ, 44.5 Ω 14.07 x 2.03 0.554 x 0.080
7 0.046 λ, 49.8 Ω 4.27 x 1.70 0.168 x 0.067
8, 9 0.136 λ, 61.1 Ω 12.83 x 1.19 0.505 x 0.047
VD2
1PTMA18040
J1 J2
VD1
C2
10µF
C1
100µF
50V
C4
0.1µF
C5
12pF
C19
12pF
C22
10µF
C20
0.1µF
C23
100µF
50V
C31
12pF
C24
12pF
C25
0.1µF
C27
10µF
C28
100µF
50V
DUT
1
2
3
5
6
7
48
C30
2.7pF
24567
8
VG1
C6
10µF
C8
0.1µF
C9
12pF
C11
1µF
C12
0.1µF
C13
12pF
G2V
C3
1µF
C7
1µF
C10
10µF
C21
1µF
C26
1µF
C14
12pF
C15
0.1µF
C16
1µF
C17
10µF
C18
100µF
50V
C29
2.2pF
3
9
PTMA180402EL
PTMA180402FL
Data Sheet 8 of 12 Rev. 09.1, 2013-07-30
Reference Circuit (cont.)
Reference circuit asembly diagram* (not to scale)*
Component Description Suggested Manufacturer P/N or Comment
C1, C18, C23, C28 Electrolytic capacitor, 100 µF, 50 V Panasonic Electronic Components EEV-FK1H101GP
C2, C6, C10, C17, C22, C27 Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL
C3, C7, C11, C16, C21, C26 Ceramic capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA
C4, C8, C12, C15, C20, C25 Capacitor, 0.1 µF Kemet C1210C104K5RACTU
C5, C9, C13, C14, C19, C24, Ceramic capacitor, 12 pF ATC 600S120JT
C31
C29 Ceramic capacitor, 2.2 pF ATC 600S2R2CT
C30 Ceramic capacitor, 2.7 pF ATC 600S2R7BT
PTMA180402EL
PTMA180402FL
Confidential, Limited Internal Distribution
Data Sheet 8 of 12 Rev. 09, 2011-12-13
Reference Circuit (cont.)
Reference circuit asembly diagram* (not to scale)*
Component Description Suggested P/N or Comment
Supplier
C1, C18, C23, C28 Electrolytic capacitor, 100 µF, 50 V Digi-Key PCE3718CT-ND
C2, C6, C10, C17, C22, C27 Ceramic capacitor, 10 µF Murata GRM422Y5V106Z050AL
C3, C7, C11, C16, C21, C26 Ceramic capacitor, 1 µF Digi-Key 445-1411-2-ND
C4, C8, C12, C15, C20, C25 Capacitor, 0.1 µF Digi-Key 399-1267-2-ND
C5, C9, C13, C14, C19, C24, Ceramic capacitor, 12 pF ATC 600S120JT
C31
C29 Ceramic capacitor, 2.2 pF ATC 600S2R2CT
C30 Ceramic capacitor, 2.7 pF ATC 600S2R7BT
Data Sheet 9 of 12 Rev. 09.1, 2013-07-30
PTMA180402EL
PTMA180402FL
Package Specifications
Package H-33265-8 Outline
Diagram
Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: S – source; see Pinout Diagram for complete list.
5. Lead thickness: 0.127±0.025 [.005±0.001]
6. Exposed metal plane on bottom of ceramic insulator.
7. Gold plating thickness: 0.25 micron [10 microinch] max.
15.24±0.51
[.600±.020]
2.54±0.51
[.100±.020]
(45° X 2.03 [.08])
C
L
L
C
C
L
1.02
[.040]
10.16
[.400]
SPH 1.57
[.062]
3.68±.38
[.145±.015]
10.16
[.400]
7.11
[.280]
4X R 0.63 [.025] MAX
4X R 0.13 [.05] MAX
9.55
[.376]
REF
2X 2.21
[.087]
0.76
[.030]
6X 0.406
[.016]
2X 3.48
[.137]
2X 4.57
[.180]
12 3 4
8
5 6 7
9.78
[.385]
[.600]
S
20.32
[.800]
2X R1.59
[R.063]
4X R1.52
[R.060]
6.
L
C
L
C
(2.73
[.107])
H-33265-8_po_02_08-02-2013
15.24
PTMA180402EL
PTMA180402FL
Data Sheet 10 of 12 Rev. 09.1, 2013-07-30
Package Specifications (cont.)
Package H-34265-8 Outline
S
C
L
1.02
[.040]
10.16
[.400]
10.16
[.400]
SPH 1.57
[.062]
3.68±.38
[.145±.015]
H-34265-8_po_03_08-02-2013
15.24±0.51
[.600±.020]
2.54±0.51
[.100±.020]
L
C
C
L
10.16
[.400]
7.11
[.280]
4X R 0.63 [.025] MAX
4X R 0.13 [.05] MAX
9.55
[.376]
REF
2X 2.21
[.087]
0.76
[.030]
6X 0.406
[.016]
2X 3.48
[.137]
2X 4.57
[.180]
1 2 3 4
8
5 6 7
(45° X 2.03 [.08])
Diagram
Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: S – source; see Pinout Diagram for complete list.
5. Lead thickness: 0.127±0.025 [.005±0.001]
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Data Sheet 11 of 12 Rev. 09.1, 2013-07-30
PTMA180402EL
PTMA180402FL
Pin # Function
S (flange, see Package Outlines) Source
1 Drain 1
2 FET_D
3 FET_G
4 RF In
5 Gate 1
6 Gate 2
7 NC
8 RF Out/D2
Pinout Diagram
Pin Diagram for PTMA180402EL and PTMA180402FL
Packages H-33265-8 and H-34265-8
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
48
NC
1
2
5
6
3
7
Thermal FET
2nd1st
a180402efl PD pi nout 2007 12 12
Edition 2013-07-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
PTMA180402EFL V1
Page Subjects (major changes since last revision)
Data Sheet 12 of 12 Rev. 09.1, 2013-07-30
Revision History: 2013-07-30 Data Sheet
Previous Version: 2011-12-13, Data Sheet
3 Added operating voltage in Maximum Ratings table
8 Revised manufacturer and part number in component list
9, 10 Minor cosmetic changes only