PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 - 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices are offered in thermally-enhanced ceramic packages for cool and reliable operation. PTMA180402EL Package H-33265-8 PTMA180402FL Package H-34265-8 Features * Designed for wide RF and modulation bandwidths and low memory effects * On-chip matching, integrated input DC block, 50ohm input and > 5-ohm output * Typical single-carrier CDMA performance at 1960 MHz, 28 V - Average output power = 4 W - Linear gain = 30 dB - Efficiency = 14% - Adjacent channel power = -53 dBc * Typical 2-tone performance, 1960 MHz, 28 V - Output power (PEP) = 50 W at IM3 = -30 dBc - Efficiency = 33% -25 * -30 2200 Capable of handling 10:1 VSWR @ 28 V, 40 W (CW) output power * Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F * High-performance, thermally-enhanced packages, Pb-free and RoHS compliant, with solder-friendly plating Broadband Performance VDD = 28 V, IDQ1 = 110 mA, IDQ1 = 330 mA 35 0 Gain -5 25 -10 20 -15 Return Loss 15 10 5 1700 1800 1900 2000 2100 -20 Return Loss (dB) Gain (dB) 30 Frequency (MHz) All published data at TCASE = 25C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 12 Rev. 09.1, 2013-07-30 PTMA180402EL PTMA180402FL RF Characteristics CDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA, POUT = 4 W average, = 1960 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 28.5 30 -- dB Drain Efficiency D 13 14 -- % Adjacent Channel Power Ratio ACPR -- -53 -50 dBc Symbol Min Typ Max Unit DC Characteristics Stage 1 Characteristics Conditions Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 1.6 -- Operating Gate Voltage VDS = 28 V, IDQ = 160 mA VGS 2.0 2.5 3.0 V Stage 2 Characteristics Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.21 -- Operating Gate Voltage VDS = 28 V, IDQ = 330 mA VGS 2.0 2.5 3.0 V Data Sheet 2 of 12 Rev. 09.1, 2013-07-30 PTMA180402EL PTMA180402FL Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -0.5 to +12 V Operating Voltage VDD 24 to 28 V 200 C -40 to +150 C Junction Temperature TJ Storage Temperature Range TSTG Overall Thermal Resistance (TCASE = 70C) POUT = 40 W, IDQ1 = 160 mA, IDQ2 = 330 mA Unit 1st Stage RJC 5.0 C/W 2nd Stage RJC 1.1 C/W Ordering Information Type and Version Package Type Package Description Shipping PTMA180402EL V1 H-33265-8 Themally-enhanced, slotted flange Tray PTMA180402EL V1 R50 H-33265-8 Themally-enhanced, slotted flange Tape PTMA180402FL V1 H-34265-8 Themally-enhanced, earless flange Tray PTMA180402FL V1 R50 H-34265-8 Themally-enhanced, earless flange Tape Typical Performance (data taken in a production test fixture) Two-tone at Selected Frequencies CW Performance 32 Gain (dB) 40 Gain 30 30 29 20 = 1930 MHz = 1960 MHz = 1990 MHz 28 27 30 35 40 45 10 50 PAE (%) Efficiency 31 Power Added Efficiency (%) 50 -20 35 -25 30 -30 25 -35 Efficiency 20 -40 IMD3 15 10 0 0 -45 -50 = 1930 MHz = 1960 MHz = 1990 MHz 5 Output Power (dBm) Data Sheet 40 30 35 40 IMD3 (dBc) VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 330 mA VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 330 mA -55 45 -60 Output Power, avg. (dBm) 3 of 12 Rev. 09.1, 2013-07-30 PTMA180402EL PTMA180402FL Typical Performance (cont.) IS-95 at Selected Temperatures IS-95 at Selected Frequencies VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, = 1960 MHz Efficiency 20 -45 15 -50 10 -55 ACPR -60 -65 0 2 4 6 8 5 10 0 -45 25 +25C -25C +90C 15 -55 ACPR 5 -5 0 2 6 8 10 WCDMA Performance 25 -30 1.15 1.10 = 1930 MHz = 1960 MHz = 1990 MHz -35 ACPR (dBc) 1.05 1.00 Slope = -1.3 mV/C 0.95 -65 VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, Test Mode 1 w/64 DPCH, PAR = 7.5 dB VDD = 28 V, IDQ1 = 110 mA, IDQ2 = 335 mA Normalized Gate - Source Voltage (threshold), V 4 -60 Output Power, avg. (W) Gate - Source Voltage vs. Temperature 20 Efficiency -40 15 10 -45 5 -50 0.90 Data Sheet -50 PAE Output Power (W) 0.85 -40 Gain 35 ACPR -30 -10 10 30 50 70 -55 90 Temperature (C) 1 3 5 7 9 11 0 Power Added Efficiency (%) ACPR (dBc) -40 Gain (dB), Power Added Efficiency (%) 25 = 1930 MHz = 1960 MHz = 1990 MHz Power Added Efficiency (%) -35 Adj. Ch. Power Ratio (dBc) VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA Output Power (W) 4 of 12 Rev. 09.1, 2013-07-30 PTMA180402EL PTMA180402FL Typical Performance (cont.) EDGE EVM Performance EDGE Modulation Spectrum Performance VDD = 28 V, IDQ1 = 160 mA, IDQ2 = 330 mA, = 1960 MHz VDD = 28 V, IDQ! = 160 mA, IDQ2 = 330 mA, = 1960 MHz Efficiency 20 2 15 EVM 10 1 5 0 30 32 34 36 38 40 42 44 -45 ACPR (dB) . Drain Efficiency (%) 25 40 -35 -55 24 400 kHz 16 -65 -75 0 -85 Output Power (dBm) 32 Efficiency 8 600 kHz 30 32 34 36 38 40 42 Efficiency (%) 3 EVM RMS (average %) . 30 44 0 Output Power (dBm) Six-carrier TD-SCDMA Drive-up VDD = 28 V, IDQ1 = 230 mA, IDQ2 = 335 mA, = 2017.5 MHz 25 -30 Adj Lower Adj Upper 20 ACPR (dBc) Alt Lower Alt Upper -40 15 Effciency -45 10 -50 5 -55 31 32 33 34 35 36 37 38 39 Efficiency (%) -35 0 Output Power (dBm) Data Sheet 5 of 12 Rev. 09.1, 2013-07-30 Adj Upper 20 Alt Low er Alt Upper -40 15 Effciency -45 10 -50 5 -55 Efficiency (%) ACPR (dBc) -35 PTMA180402EL PTMA180402FL 0 31 32 33 34 35 36 37 38 39 0. 0 5 Output Power (dBm) 0. 45 Broadband Circuit Impedance 3 D RAT O 0. 2 -3.62 1700 18008.89 -3.62 7.27 -2.99 1800 7.27 -2.99 1900 6.26 -2.13 2000 5.59 -1.19 2100 21005.14 5.14 -0.27 -0.27 2200 22004.89 0.67 4.89 0.67 1900 GE N E 6.26 -2.13 5.59 -1.19 0.5 0.4 0.5 0.4 1700 MHz Z Load 1700 MHz 5 of 11 Rev. 08, 2009-08-31 <--- 0.1 0.3 0.3 0.2 2200 MHz 0.2 0.1 0.1 0.0 2200 MHz Z Load 0.1 Data Sheet 8.89jX 2000 W ARD LOAD S TO GTHD LOAD LE WNAR SA VTEO H T W G N E LE 0.0 W AV W AV ELE NGT H - W AV E-LE NGT HS T S T OW A R D Z0 = 50 Z0 = 50 1700 R Z Load 0 .1 S jX MHz MHz Z Load R Frequency Z Load R --> IN Frequency 0. Broadband Circuit Impedance 0. 2 0. 45 0 5 .0 0. 3 4 .5 0. Data Sheet 6 of 12 Rev. 09.1, 2013-07-30 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Reference Circuit Circuit Reference VD1 VD2 C1 100F 50V C2 10F C3 1F C4 0.1F C19 12pF C5 12pF C20 0.1F C21 1F C22 10F 8 C23 100F 50V DUT 1 2 3 J1 4 1 PTMA18040 C31 12pF 8 2 3 5 6 7 VG1 C6 10F C7 1F C8 0.1F C9 12pF C10 10F C11 1F C12 0.1F C13 12pF 5 6 7 C27 10F C28 100F 50V J2 C30 2.7pF C14 12pF C15 0.1F 9 C16 1F VG2 4 C29 2.2pF C17 10F C18 100F 50V C24 12pF C25 0.1F C26 1F Reference circuit schematic for = 1930 - 1990 MHz Reference circuit schematic for = 1930 - 1990 MHz Circuit Assembly Assembly Specifications Specifications Circuit DUT PTMA180402EL or PTMA180402FL LDMOS Integrated Power Amplifier DUT PTMA180402EL or PTMA180402FL LDMOS Integrated Power Amplifier Test Fixture Part No. LTN/PTMA180402EFL Test Fixture Part No. LTN/PTMA180402EFL PCB Rogers 4350, 0.76 mm [.030"] thick, 1 oz. copper, = 3.48 PCB Rogers 4350, 0.76 mm [.030"] thick, 1 oz. copper, rr = 3.48 Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Microstrip Microstrip 11 22 33 44 55 66 77 8,8, 99 Data Sheet Data Sheet Electrical Characteristics Characteristics at at 1960 1960 MHz MHz Electrical 0.224 , 49.8 0.224 , 49.8 0.022 , 10.4 0.022 , 10.4 0.027 , 10.4 0.027 , 10.4 0.035 , 34.1 0.035 , 34.1 0.048 , 34.1 0.048 , 34.1 0.153 , 44.5 0.153 , 44.5 0.046 , 49.8 0.046 , 49.8 0.136 , 61.1 0.136 , 61.1 Dimensions: LL xx W W (mm) (mm) Dimensions: Dimensions: LL xx W W (in.) (in.) Dimensions: 7 of 12 7 of 12 20.75 x 1.70 20.75 x 1.70 1.85 x 13.00 1.85 x 13.00 2.26 x 13.00 2.26 x 13.00 3.18 x 3.00 3.18 x 3.00 4.29 x 3.00 4.29 x 3.00 14.07 x 2.03 14.07 x 2.03 4.27 x 1.70 4.27 x 1.70 12.83 x 1.19 12.83 x 1.19 0.817 x 0.067 0.817 x 0.067 0.073 x 0.512 0.073 x 0.512 0.089 x 0.512 0.089 x 0.512 0.125 x 0.118 0.125 x 0.118 0.169 x 0.118 0.169 x 0.118 0.554 x 0.080 0.554 x 0.080 0.168 x 0.067 0.168 x 0.067 0.505 x 0.047 0.505 x 0.047 Rev. 09.1, 2013-07-30 Rev. 09, 2011-12-13 PTMA180402EL PTMA180402EL PTMA180402FL PTMA180402FL Confidential, Limited Internal Distribution Reference Circuit Circuit (cont.) (cont.) Reference Reference circuit circuit asembly asembly diagram* diagram* (not (not to to scale)* scale)* Reference Component Component Description Description Suggested Manufacturer Suggested SupplierElectronic Components Panasonic C1, C18, C23, C28 Electrolytic capacitor, 100 F, 50 V C1, C18, C23, C28 Electrolytic capacitor, C2, C6, C10, C17, C22, C27 Ceramic capacitor, 10 100 F F, 50 V C2, C6, C10, C17, C22, C27 Ceramic capacitor, 10 C3, C7, C11, C16, C21, C26 Ceramic capacitor, 1 FF Digi-Key Murata Murata TDK Corporation C3, C8, C7, C12, C11, C15, C16, C20, C21, C25 C26 C4, C4, C8, C12, C15, C20, C25 C5, C9, C13, C14, C19, C24, Digi-Key Kemet Digi-Key ATC Ceramic capacitor, Capacitor, 0.1 F 1 F Capacitor, 0.1 F 12 pF Ceramic capacitor, P/N or or Comment Comment P/N EEV-FK1H101GP PCE3718CT-ND GRM422Y5V106Z050AL GRM422Y5V106Z050AL C4532X7R2A105M230KA 445-1411-2-ND C1210C104K5RACTU C5, C9, C13, C14, C19, C24, Ceramic capacitor, 12 pF C31 C31 C29 Ceramic capacitor, 2.2 pF C29 Ceramic capacitor, capacitor, 2.7 2.2 pF pF C30 Ceramic ATC 399-1267-2-ND 600S120JT 600S120JT ATC ATC ATC 600S2R2CT 600S2R2CT 600S2R7BT C30 ATC 600S2R7BT Data Sheet Sheet Data Ceramic capacitor, 2.7 pF of 12 12 88 of Rev. 09, 2013-07-30 2011-12-13 Rev. 09.1, PTMA180402EL PTMA180402FL Package Specifications Package H-33265-8 Outline 15.24 [.600] 7.11 [.280] (45 X 2.03 [.08]) 4X R 0.13 [.05] MAX C L 2.540.51 [.100.020] 8 10.16 [.400] (2.73 [.107]) C L 1 2 3 4 9.78 [.385] 15.240.51 [.600.020] 5 6 7 4X R 0.63 [.025] MAX 2X 4.57 [.180] 2X 2.21 [.087] 6X 0.406 [.016] 0.76 [.030] 2X R1.59 [R.063] 2X 3.48 [.137] 9.55 [.376] REF C L SPH 1.57 [.062] 4X R1.52 [R.060] 10.16 [.400] 1.02 [.040] S H-33265-8_po_02_08-02-2013 3.68.38 [.145.015] 20.32 [.800] 6. CL CL Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: S - source; see Pinout Diagram for complete list. 5. Lead thickness: 0.1270.025 [.0050.001] 6. Exposed metal plane on bottom of ceramic insulator. 7. Gold plating thickness: 0.25 micron [10 microinch] max. Data Sheet 9 of 12 Rev. 09.1, 2013-07-30 PTMA180402EL PTMA180402FL Package Specifications (cont.) Package H-34265-8 Outline (45 X 2.03 [.08]) 7.11 [.280] C L 2.540.51 4X R 0.13 [.05] MAX 8 [.100.020] 10.16 [.400] 15.240.51 [.600.020] C L 1 2 3 4 5 6 7 4X R 0.63 [.025] MAX 2X 4.57 [.180] 2X 2.21 [.087] 0.76 [.030] 6X 0.406 [.016] 2X 3.48 [.137] 9.55 [.376] REF 10.16 [.400] SPH 1.57 [.062] 1.02 [.040] H-34265-8_po_03_08-02-2013 3.68.38 [.145.015] C L 10.16 [.400] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: S - source; see Pinout Diagram for complete list. 5. Lead thickness: 0.1270.025 [.0050.001] 6. Gold plating thickness: 0.25 micron [10 microinch] max. Data Sheet 10 of 12 Rev. 09.1, 2013-07-30 PTMA180402EL PTMA180402FL Pinout Diagram Pin Diagram for PTMA180402EL and PTMA180402FL Packages H-33265-8 and H-34265-8 Thermal FET 1 2 Pin # Function 3 S (flange, see Package Outlines) Source 1 Drain 1 2 FET_D 3 FET_G 4 RF In 5 Gate 1 6 Gate 2 7 NC 8 RF Out/D2 4 8 5 6 7 NC 1st 2nd a180402ef l PD pi nout 2007 12 12 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 11 of 12 Rev. 09.1, 2013-07-30 PTMA180402EFL V1 Revision History: Previous Version: 2013-07-30 2011-12-13, Data Sheet Data Sheet Page 3 8 9, 10 Subjects (major changes since last revision) Added operating voltage in Maximum Ratings table Revised manufacturer and part number in component list Minor cosmetic changes only We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2013-07-30 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 12 of 12 Rev. 09.1, 2013-07-30