i aR F et a + Hi Type No. Use wPAisa | genome (NPN Dual Transistor | _#PARA ta was, BeMGS, 4>r-F> 2 re (P-ch Dual MOS FET) wPAMA | +a 7+<, mites (N-ch Dual MOS FET) PARA ye ort (NPN Dual Transistor } ePASTA | ade ty ( a wPARBA | Grape a" #PASIA ie eae { " } wPAMD | BMHEZ4o4>7 F "(Diode Array 16) wPAGD | AMiRMMIEAL > to 7 -{NIFN Quad Transistor) aPATD | ARMMREAL See 7 Nl x PAD | ARMM ote 7 ! ' ia ie ow al nPAdSA fires (PNP Dual Transistor ) PASSC et ee eee (Darrington Transistor Array) a PASH SMe A 4 PT (FAT FTE 1) (Diode Array 6) w PASC 7 A> FF 45(b Fe VAP TE 4) (Transistor Array 7) ePASTC | AINE RS > eae TE 4) (Darington Transistor Array) wPAGOA | 28yine [N-ch Dual Junetion FET) e PABA nat { o ) p PARC ews > > = MIX i j ePAGBH | Zee ( " | #PAGH Mim te (FA FT ) (Diode Array 6) | PAGIC RHE} Soe ae Pe st) (Darington Transistor Array) wPATDA | sahinen (N-eh Dual Junction FET)) ePATIA | #an0g i " 2SC794 mp Net (NPN Dual Transistor} 250603 BEMAL ote 7 ( " 25C 1265 EG, HABA a> FT f " ) esciesy | 2a, MAME RT Fo 7 ( i" ) 28C16s6 | MNO, MRBRAL FEF ( " ) 2SCl6) | BMW, MHRA FT r ) 75C 1662 EWG, HABA e Fos { " } 28C1731 | See, Meera to ee 7 " | 2sci7s2 | Ame, wa A, tor ite |< 2 7 25c1733 | tenes . 1 2SCi1924 ZS. HR@E*Z4 oe FoF { " } 25C1925 | Se. Bowe eS f " y 2SCi92 | SON, Mee te 7 r } 2SC1927 | we, eM A eS { s } LICR EMORMR REE, HRS Fic Ok 2 Lie EK SM tree, aERF Brave } 34227 -/ Bipolar Dual Transistor ey ie tt Absolute t 8 Type No. |Qealt Use jie | oe: - aw \ Vie i co icv) cv (nie) nia) (103 (Wi) MAX. 25294 | Qs | Diff. NPN.D.Si | TO-78A) | 25 12 5 SO SO 175) 10 | O.) 25C803 | Qr | Chop. NPN.E.Si | TO-mti| 7 *4.5 7 30 "200 150/6.0| 1.0 uPAISA | Qo | Diff NPN.D.Si | TO-7BIA) | 2 12 5 5 30 180) 10 | 0.1 = PAGA | Qo | Chop. NPN.E.Si | TO-smti| 7 5 7 50 *200 1506.0| 0.05 | wPAITA | Qa | Dif. SW. NPN. E. Si TO-7HA) 125 13 5 180 175) a5 | 0.1 pPama| Q@; |i. #$|NPNE Si |TO-781B) 60 40 5 50 300 175/ 15 | MOpA wPARIA | Qs | Dill. NPN.E.Si | TO-78(B) | 0 40 5 50 300 175) 15 | S00pA Tt oPAMGA | Qs | Dill. PNP.E.Si | TO-THB) -60-40 -5 50 300 175|30) 0.1 THEME GU wal wPATTA-A, oPASA-A, oPAGSA-A * Vien @ fil: @F a7 FET. Dual FET ' ea = iA, rH OE a &f - (Ta= Be pee | | mw | manlnen Rete CTE) a) | tens, A) Type No. \Qusity! Use Siete | Ou tek aW Tas Von grade | (Wi (WW) con junit! CTC) CW )) MAK JV )) TYP MAX wPAI3A | Qs | Chop. Pech MOS Deal) TO-TeiC} | +30 -30 -20 100 125 |M) 10 wPAMA | Qs | Chop. Diff. | Neh MOS Dual|TO-78(C) | +30 20 10 100 125 | 10) 10 | 0) 06 2.5 wPABDA | Qs | Diff. Nich. J, Qual | TO-78(D) *_ * %% 2 175 |-20| -000 | 10] 20 5. wPASIA | Qs | Diff. | Nch. J, Dual | TO-78/D) #49 so so 250 173 |-20) -100 | | 20 5.0 ePAGIC | H | Mix. Nech.J.Duel| DIP(A) |*-20 32 350 125 |8|S0nA| 10 | 16 82 PAGSH | #2 | Dift. Nich. J. Dual | SIP(A) * 60 *. 0 20 12h |-20/-10nA) 10/ 6.0 wPATOA | Qs | Diff. Neh.J.Dual|TO-71 *-40 "90 "S30 250 175 |20) -100 | 1 | 2.0 5.0 wPATiA | Gs | Diff. Nich. J. Dual | TO-71 * wots "0 1o Ws |20|/ -o |] | 20 645.0 ent 7 - F Ge iA ate Leh @Vcou * Vise #lc ) BALE Qa HIER KETESUCEBLSERREATYT, BRAINSTEM EKTIML ST, Ms F BY Package Dimensions (Unit : mm) 2 TO-70\A! To-45 Bu TO-78/B) TO-79(C,D) @40MAX yy M.0MAL 4. 4uAL aoe ' a wouMatla = a. OMAK. ig 4. SMAX)- == 4 ' 13 mak il al = . tz _ = 1s = a} mF = Fr S15 * s et = Tt ay Cy ., : : & +) Ie : 18 (. Cannection 6. Connection . a L Seerce | lL, Sauron 1 iE . peel 2 Dram I & Draie 1 Conmeciae, Diagrem 2 Collector 1 1 Gate i 2 Gate 1 wes? c 1. Bose 1 4 Suh Cone 1 4. Seb (Come) d Soh (Cane! Case)? Base 2 & Collector 2 5. Gate 2 = Sere? a 4 Emitter 2 i Baas 2 & Dram 2 & Drei 2 if & Esitier | 7. Emitter 2 7. Source 7 7. Gate 2 3E & Collector! Cane) & Sub. Case 2 & NC B Sub. (Cane! ; Bias <> TC-SA, TE-3C FIAJ EIA): TC-SA. TE-c feb SEDC Wo-aiacito-re) | JEDEC:MO-AG(TO.Te IEC ~ rc | OL are Lt &} BPA teehee Lat, ERT Electrical Characteristics (Ta=25T } bee She Ventens () Vio (mV) " " -s Vee , le "| Te) In ry te Remarks Type Ma Vi (mA)| MIN. TYP MIN.|imA) (mA)|/ TYP MAX) (Vi'(mA)| TYP MAX. Lo/to0| ) 0 6a oe) ms be 0.4) Loy 1.0 10 | f+ 200MHs, Ca%4.5pF isch |o5/0.1 | 5 bo bec 15 25003 (1.0/1.0) 0 10] 0.8) 0 / 10 04 fr 200MHr w PAISA _O5/ Lo} wm 80 | 08 | Foy OD [0085 0.15 bec#l?2, AV a S0WV uo PARA (3.0/0) Iw) o.7) w/a os Oe tee 150, tape 2Ons, to ns | ePASTA } 3.0 / 1.0 | 300 50) O=<.8 | WY a) Oe O86) 80 eA) 0.5 20 | AMAT 2] 1500/C. NES 1008 | PAA /$.0/ 1.0) 300 40/08) 0/40) 04 0.8) 5:0 eA) 20 58 AVe/AT=iieV/C, AF=i0d8 | PARA =1.0/=1.0) 8 180) 0.8 | 10/ 120) - 0.95 -0.5) =1.0/=1.0) 0:5 3.0 | teere2S0MHz, NF < 3.008 PAGA hee = bres Electrical Characteristics | Tae ST | Vesum (V) [Foot Camel } Civ (pF) a = = & Vou + Io Vos , Ip 1 Vins y Nes | Remarks Type No. (V)(eA)| MIN, TYP MAX) (V)(mA)) MIN. TYP.) (V)(V) | TYPOMAX. / 10|-2.5 25 5.5] 10/-1.0)'1.0 2.0) 00 #0 | 25 = 20 | Ayeis10%, Rosasoog PAIIA mw / SO 5.0) 10 flog } 030.6 | 10 7 0 | a0 Ci 44pF, Sinss&0.1 mA oPAMA if 0 |-0.2 -1.0 -2.5) 10/05) 1.0 20) 0 / 0 | 2.5) 5.0 |) MesrVesried 0m wPAGOA wo / 0 |-0.2 -1.0 -2.5) 0/05) 1.0 20) W/O | 2.5 5.0 |) Wess Velsdimv oPAGIA | mo / j-O 2.2] 0 / 8.0) 12.5 15 | 0 /*3,0| 7.5 Geax =12d6 TYP (400MHz) | uPAGIC ' 0 / @ |-0.9 -1.5 -4.2] wo 1.0) 2.0 407 10/0 | 6.0 6.0 | e50nW He (10H) a PAGSH | 10 / @ |-O2 -1.0 -2.5) 0/05] 1.0 2.0) 10 / 0 | 2.5. 5.0 || osuVesrisS.Omv nPATOA [0 ew [-0.2 -10-25) wyos {te 20) wy oO | 5 80 |e Veor le We ePATIA #* Ip Di iA) SIP (A) TO-T1 4. MAT. #4 MAX TNT ted ai} | |i is im | | |e ee = 2 = . io) i a = 1.05 5 * Gas. Le he : Se <a a, Suh 2 Dram 1 Si (rp Sa 5. Seerce 7 2 Gate 1 Livck i & Serce 3 i. Gate 2 i, Source 2 felaed & Gate 2 7. Drain 2 5S. Drain 2 3. Gate | 7, Telond & Gate 2 4 Souree 1 2 Dram 2