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Document No. S18529EJ3V0DS00 (3rd edition)

Date Published December 2008 NS

Printed in Japan

MOS INTEGRATED CIRCUIT

PD166007

DATA SHEET

SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE

2006

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

PACKAGE DRAWING (unit: mm)

6.5±0.2 2.3±0.1

0.5±0.1

0.6±0.1

0.5±0.1

6.1±0.2

1.52±0.12

10.3 MAX (9.8 TYP)

34 5

GAUGE PLANE

SEATING PLANE

NOTE

1. No Plating area

5.0 TYP

4.3 MIN

1.0 TYP

4.0 MIN (4.4 TYP)

0.8

1.14

0.508

0 to 0.25

GENERAL DESCRIPTION

The

PD166007 device is an N-channel high-side switch with charge

pump, current controlled input, diagnostic feedback with load current

sense and embedded protection functions.

FEATURES

• Built-in charge pump

• Low on-state resistance

• Short-circuit protection

- Shutdown by short-circuit detection

• Over-temperature protection

- Shutdown with auto-restart on cooling

• Small multi-chip package: JEDEC 5-pin TO-252

(MSL: 3, profile acc. J-STD-20C)

• Built-in diagnostic function

- Proportional load current sensing

- Defined fault signal in case of thermal shutdown and/or short circuit shutdown

ORDERING INFORMATION

Part Number Lead plating Packing Package

PD166007T1F-E1-AY Note Sn Tape 2500 p/reel 5-pin TO-252 (MP-3ZK)

Note Pb-free (This product does not contain Pb in the external electrode.)

QUALITY GRADE

Part Number Quality Grade

PD166007T1F-E1-AY Special

Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by

NEC Corporation to know the specification of quality grade on the devices and its recommended applications.

APPLICATION

• Light bulb (to 55 W) switching

• Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor

• Replacement for fuse and relay

<R>

Data Sheet S18529EJ3V0DS00

PD166007

Tab

1 2 3 45

BLOCK DIAGRAM

Charge pump

Current sense

Output voltage

sense

Control logic

Power supply

voltage sense

Temperature

Sensor

Current

detector

ESD

protection

ESD

protection

Fault signal

output

VCC

OUT

Internal

power supply

RIS

Load

1 & 5

3 & Tab

Dynamic

clamp

VOUT

Von

VIS

IIS

ICC

VIN

IIN

VCC - VINVCC Charge pump

Current sense

Output voltage

sense

Control logic

Power supply

voltage sense

Temperature

Sensor

Current

detector

ESD

protection

ESD

protection

Fault signal

output

VCC

OUT

Internal

power supply

RIS

Load

1 & 5

3 & Tab

Dynamic

clamp

VOUT

Von

VIS

IIS

ICC

VIN

IIN

VCC - VINVCC

PIN CONFIGURATION

Pin No. Terminal Name Function

1 OUT Output to load: pin 1 and 5 must be externally shorted.

2 IN Input; activates the power switch, if shorted to ground.

3&Tab VCC Supply Voltage: tab and pin 3 are internally shorted.

4 IS Sense Output: diagnostic feedback Note

5 OUT Output to load: pin 1 and 5 must be externally shorted.

Note If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor.

<R>

Data Sheet S18529EJ3V0DS00 3

PD166007

ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified)

Parameter Symbol Test Conditions Rating Unit

VCC voltage VCC1 28 V

VCC voltage for full short circuit

protection

VCC2 18 V

VCC voltage (Load Dump) VCC3 RI = 1 Ω, RL = 1.5 Ω, td = 400 ms,

RIS = 1 kΩ, IN = low or high 36 V

Load current IL DC, TC = 25°C 30 A

Load current (short circuit

current)

IL(SC) Self Limited A

Power dissipation PD TC = 25°C 59 W

Channel temperature Tch −40 to +150 °C

Storage temperature Tstg −55 to +150 °C

IN, IS ±2.0 kV

Electric discharge capability

(Human Body Model)

VESD R = 1.5 kΩ, C = 100pF

OUT ±4.0 kV

Voltage of IN pin (DC) VIN VCC = 14 V VCC+14 V, VCC–28 V V

Voltage of IS pin (DC) VIS VCC = 14 V VCC+14 V, VCC–28 V V

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Power supply voltage VCC Tch = −40 to 150°C 8 18 V

THERMAL CHARACTERISTICS

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Thermal Resistance Rth(ch-a) Device on 50 mm x 50 mm x 1.5 mm

epoxy PCB FR4 with 6 cm2 of 70

copper area

45 55 °C/W

ELECTRICAL CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Required current capability of

Input switch

IIH 0.7 2.2 mA

Input current for turn-off IIL

Tch = −40 to 150°C

Tch = 25°C 4 6

A Standby Current ICC(off) Iin = 0 A

Tch = −40 to 150°C 4 15

Tch = 25°C 8 10 On State Resistance Ron IL = 7.5 A

Tch = 150°C 14 18

mΩ

Turn On Time Ton 200 400

Turn Off Time Toff 250 700

Rise time Tr 150 300

Fall time Tf

RL = 2.2 Ω,

Tch = −40 to 150°C

refer to page 15

100 500

Slew rate on dV/dton 25 to 50% VOUT, RL = 2.2 Ω,

Tch = −40 to 150°C, refer to page 15 0.2 0.6 V/

Slew rate off -dV/dtoff 50 to 25% VOUT, RL = 2.2 Ω,

Tch = −40 to 150°C, refer to page 15 0.2 0.5 V/

Data Sheet S18529EJ3V0DS00

PD166007

PROTECTION FUNCTIONS (VCC = 12 V, Tch = 25°C, unless otherwise specified)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

VCC = −12 V, IL = −7.5 A, RIS = 1 kΩ

Tch = 25°C 0.8 0.84 V

Output voltage drop at reverse

battery condition Note

Vds(rev)

Tch = 150°C 0.6 0.63 V

Tch = −40°C 50 120

Tch = 25°C 50

IL6, 3(SC) Note VCC − VIN = 6 V,

Von = 3 V

Tch = 150°C 20 45

Tch = −40°C 35 110

Tch = 25°C 35

IL6, 6(SC) Note VCC − VIN = 6 V,

Von = 6 V

Tch = 150°C 10 35

Tch = −40°C 110 180

Tch = 25°C 76 105

IL12, 3(SC) VCC − VIN = 12 V,

Von = 3 V

Tch = 150°C 50 95

Tch = −40°C 90 160

Tch = 25°C 85

IL12, 6(SC) Note VCC − VIN = 12 V,

Von = 6 V

Tch = 150°C 40 80

Tch = −40°C 55 120

Tch = 25°C 50

IL12, 12(SC) Note VCC − VIN = 12 V,

Von = 12 V

Tch = 150°C 10 45

Tch = −40°C 130 200

Tch = 25°C 125

IL18, 3(SC) Note VCC − VIN = 18 V,

Von = 3 V

Tch = 150°C 60 110

Tch = −40°C 110 170

Tch = 25°C 110

IL18, 6(SC) Note VCC − VIN = 18 V,

Von = 6 V

Tch = 150°C 50 100

Tch = −40°C 75 120

Tch = 25°C 70

IL18, 12(SC) Note VCC − VIN = 18 V,

Von = 12 V

Tch = 150°C 30 65

Tch = −40°C 50 90

Tch = 25°C 50

Short circuit detection current

IL18, 18(SC) Note VCC − VIN = 18 V,

Von = 18 V

Tch = 150°C 5 45

Output clamp voltage

(inductive load switch off)

Von(CL) IL = 40 mA 30 34 40 V

Over load detection voltage VON(OvL) Tch = −40 to 150°C 0.65 1 1.45 V

Turn-on check delay after

input current positive slope

td(OC) Tch = −40 to 150°C 0.8 1.9 3.5 ms

Thermal shutdown

temperature

Tth 150 175 °C

Thermal hysteresis ΔTth 10 °C

Note Not subject to production test, specified by design.

Data Sheet S18529EJ3V0DS00 5

PD166007

DIAGNOSTIC CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

KILIS = IL/IIS

VIS < VOUT − 6 V, IIS < IIS,lim

IL = 30 A Tch = −40°C 8300 9350 11000

Tch = 25°C 8300 9400 10600

Tch = 150°C 8300 9450 10000

IL = 7.5 A Tch = −40°C 7500 9400 11400

Tch = 25°C 8000 9500 10800

Tch = 150°C 8200 9550 10200

IL = 2.5 A Tch = −40°C 6100 9600 14200

Tch = 25°C 6500 9600 12800

Current sense ratio KILIS

ch = 150°C 7600 9600 11500

Sense current offset current IIS,offset VIN = 0 V, IL = 0 A 0 60

Sense current under fault

condition

IIS,fault Under fault conditions

8 V < VCC − VIS < 12 V,

Tch = −40 to 150°C

3.5 6.0 12.0 mA

Sense current saturation

current

IIS,lim Vis < Vout − 6 V,

Tch = −40 to 150°C 3.5 7.0 12.0 mA

Fault sense signal delay after

short circuit detection Note

tsdelay(fault) Tch = −40 to 150°C 2 6

Sense current leakage current IIS(LL) IIN = 0 A 0.1 0.5

Current sense settling time

after input current positive

slope Note

tson(IS) IL = 0 A 20 A

250 1000

Current sense settling time

during on condition Note

Tsic(IS)

Tch = −40 to 150°C

IL = 10 A 20 A 50 100

Note Not subject to production test, specified by design.

Data Sheet S18529EJ3V0DS00

PD166007

IIN

VOUT

VCC

0 t

ON ON

OFF OFF

IIN

VOUT

VCC

IIS

IIN

VOUT

IIS

lim

IIN

Logic

VZ,IN

VCC

Rin0

FEATURES DESCLIPTION

Driver Circuit (On-Off Control)

The high-side output is turned on, if the input pin is shorted to ground. The input current is below IIH. The high-side

output is turned off, if the input pin is open or the input current is below IIL. Rin0 is 130 Ω typ. ESD protection diode:

46 V typ.

Switching a resistive load Switching lamps

Data Sheet S18529EJ3V0DS00 7

PD166007

IIN

VOUT

IIS

Von

(

)

ESD

VCC

Ris

OUT

Control

SW1

VCC

Switching an inductive load

Dynamic clamp operation at inductive load switch off

The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,

the voltage of OUT falls below 0 V. The gate voltage of SW1 is then nearly equal to GND because the IS terminal is

connected to GND via an external resister. Next, the voltage at the source of SW1 (= gate of output MOS) falls below

the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the

dynamic clamp circuit.

When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.

SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is

not activated.

Data Sheet S18529EJ3V0DS00

PD166007

VOUT/VCC

VBAT

IIN

IL IL(SC)

VON

IIS

fault

tsdela

fault

)

VCC

VOUT

Short circuit detection

Depending on the external impedance

(Evaluation circuit)

VCC

OUT

RIS IL

IIS

IIN

VOUT

VIS

Von

VBAT VIN

: Cable impedance

Short circuit protection

Case 1: IN pin is shorted to ground in an overload condition, which includes a short circuit condition.

The device shuts down automatically when either or both of following conditions (a, b) is detected. The

sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input.

(a) IL > IL(sc)

(b) Von > Von(OvL) after td(OC)

Case1-(a) IL > IL(sc)

Typical Short circuit detection current characteristics

The short circuit detection current changes according VCC voltage and Von voltage for the purpose of to be strength

of the robustness under short circuit condition.

100

120

140

160

0 5 10 15 20

Von [V]

L(SC)

[A]

-V

=18V

-V

=12V

-V

=6V

120

150

5 101520

VCC-VIN [V]

IL(SC) [A]

Von=3V

Von=6V

Von=12V

tsdelay(fault): Fault sense signal delay after short circuit detection

IL(SC): Short circuit detection current

IL(SC) vs. VCC − VIN

Data Sheet S18529EJ3V0DS00 9

PD166007

Case1-(b) Von > Von(OvL) after td(OC)

td(oc): Turn-on check delay after input current positive slope

(Evaluation circuit)

VCC

OUT

RIS IL

IIS

IIN

VOUT

VIS

Von

VBAT VIN

: Cable impedance

VBAT

IIN

VOUT/VCC

IL IL(SC)

VON

IIS

fault

(

)

VCC

VOUT

Short circuit detection

Von

(

OvL

)

Depending on the external impedance

Data Sheet S18529EJ3V0DS00

PD166007

Short circuit detection

IIN

VOUT

VCC

Depending on the external impedance

IIS

fault

IL(SC)

tsdela

fault

)

(Evaluation circuit)

VCC

OUT

RIS IL

IIS

IIN

VOUT

VIS

Von

VBAT VIN

: Cable impedance

Case 2: Short circuit during on-condition

The device shuts down automatically when either or both of following conditions (a, b) is detected. The

sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input.

(a) IL > IL(sc)

(b) Von > Von(OvL) after td(oc)

Case2-(a) IL > IL(sc)

tsdelay(fault): Fault sense signal delay after short circuit detection

IL(SC): short circuit detection current

Data Sheet S18529EJ3V0DS00 11

PD166007

Case2-(b) Von > Von(OvL) after td(OC)

(Evaluation circuit)

VCC

OUT

RIS IL

IIS

IIN

VOUT

VIS

Von

VBAT VIN

: Cable impedance

td(oc): Turn-on check delay after input current positive slope

tsdelay(fault): Fault sense signal delay after short circuit detection

IL(SC): Short circuit detection current

Depending on the external impedance

Short circuit detection

IIN

VOUT/VCC

VBAT

IIS

fault

IL(SC)

tsdela

fault

)

VOUT

VCC

Von

(

OvL

)

(

)

Data Sheet S18529EJ3V0DS00

PD166007

IIN

VOUT

Tch

IIS

IIS,fault

Tth

Over-temperature protection

The output is switched off if over-temperature is detected. The device switches on again after it cools down.

Power dissipation under reverse battery condition

In the case of a reverse battery condition, the intrinsic body diode causes power dissipation. Additional power is

dissipated by the internal resister. The following is the formula for estimation of total power dissipation Pd(rev) in a

reverse battery condition.

Pd(rev) = Vds(rev) x IL + (VCC – Vf – Iin(rev) x Rin) x Iin(rev) + (VCC − Iis(rev) x Ris) x Iis(rev)

Iin(rev) = (VCC − ( Vf +Vf,IN)) / (Rin0 + Rin)

Iis(rev) = (VCC − Vf,IS) / (Ris0 + Ris)

Vf,IN: Forward voltage of Vz,IN

Vf,IS: Forward voltage of Vz,IS

Vf: Forward voltage of parasitic diode of external input switch

The reverse current through the intrinsic body diode has to be limited by the connected load. The current through

sense pin IN is limited by Rin0 130 Ω typ.. (Please refer to Current sense output). The current through input pin IS is

limited by Ris0 130 Ω typ. and external Ris. (Please refer to Driver Circuit (On-Off Control)).

Data Sheet S18529EJ3V0DS00 13

PD166007

Device behavior at low voltage condition

If the voltage supply goes down, the device cannot keep a fully ON state under 4.6 V(typ.), and Von voltage is going

to increase. Then, if Von voltage goes over Von(OvL), the device shuts down the output. Shutdown is latched until the

next reset via input. Shutdown does not work during td(oc) after input is active. VON(OvL) goes down under 4.6 V.

Over load detection voltage characteristics under low voltage supply condition

0.2

0.4

0.6

0.8

1.2

0 5 10 15 20

Voltage supply Vcc - VIN [V]

Over load detection voltage Von(OvL) [V]

IIN

VOUT/Vcc

VBAT

0 t

VOUT

Vcc

Von

(

OvL

)

(

)

Data Sheet S18529EJ3V0DS00

PD166007

IIS

lim

IIS

offset

KILIS=IL/IIS

VIS<Vout-6 V, IIS<IIS,lim

lim

IIS

VZ,IS

IIS

VCC

Ris0

Ris

Ris0 is 130 Ω typ. Vz,IS = 46 V (typ.), RIS = 1 kΩ nominal.

IS can be only driven by the internal circuit as long as Vis <

Vout–6 V. Ris should be less than 20 kΩ for any

application. Even If current sense and diagnostic features

are not used, Ris has to be connected.

Current sense output

Current sense ratio

4000

6000

8000

10000

12000

14000

16000

0 5 10 15 20 25 30 35

Load Current IL[A]

Current Sense Ration KILIS

Tch = -40degreeC

Tch = 150degreeC

Data Sheet S18529EJ3V0DS00 15

PD166007

VOUT

90% 90%

10% 10%

ton

toff

25%

50%

dV/dton

25%

50%

-dV/dtoff

IIS

tson(IS) tSIC

(

)

tSIC

(

)

Measurement condition

Switching waveform of OUT Terminal

Switching waveform of IS terminal

Data Sheet S18529EJ3V0DS00

PD166007

Truth table

Input Current State Output Sense Current

L − OFF IIS(LL)

Normal Operation ON IL/KILIS

Over-temperature or Short circuit OFF IIS,fault

Open Load ON IIS,offset

Application example in principle

1) In order to prevent leakage current through at IN terminal via PCB,

it is recommended to pull up the IN terminal to VCC using around 1 to10 kΩ (approx.) resistor.

2) If output current is over destruction current characteristics for inductive load at a single off,

it must be connected through an external component for protection purpose.

3) If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor.

VCC

IN OUT

Load

Vbat

PD166007

Ris

Micro.

GND

OUT

ADC PORT

5 V

OUTPUT PORT

Data Sheet S18529EJ3V0DS00 17

PD166007

TYPICAL CHARACTERISTICS

REQUIRED CURRENT C APABIRIT Y OF INPUT SWITCH

V S. AM BIENT T EM PERAT URE

0.5

1.5

2.5

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Requires Current Capability of Input Switch

IIH[mA]

Vcc=12V

INPUT CURRENT FOR TURN OFF VS.

AMBIENT TEMPERATURE

100

120

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Input Currnt for Turn Off IIL[uA]

Vcc=12V

STANDBY CURRENT VS. AMBIENT TEMPERATURE

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Standby Current Icc(off) [uA]

Vcc=12V

IIN=0A

TURN ON TIME VS. AMBIENT TEMPERATURE

100

200

300

400

500

600

700

800

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Turn On Time ton[us]

Vcc=6V

Vcc=12V

Vcc=18V

RL=2.2ohm

TURN OFF TIME VS. AMBIENT TEMPERATURE

100

200

300

400

500

600

700

800

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Turn Off Time toff[us]

Vcc=6V

Vcc=12V

Vcc=18V

RL=2.2ohm

Data Sheet S18529EJ3V0DS00

PD166007

RISE TIME VS. AMBIENT TEMPERATURE

100

200

300

400

500

600

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Rise Time tr[us]

Vcc=6V

Vcc=12V

Vcc=18V

RL=2.2ohm

FALL TIME VS. AMBIENT TEMPERATURE

100

200

300

400

500

600

-50 0 50 100 150 200

Ambient Temperature Ta[deg]

Fall Time tf[us]

Vcc=6V

Vcc=12V

Vcc=18V

RL=2.2ohm

OUTPUT CLAMP VOLTAGE (INDUCTIVE LOAD SWITCH OFF)

VS. AMBIENT TEMPERATURE

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Output Clamp Voltage (inductive load switch off)

Von(CL) [V]

Vcc=12V

IL=40mA

SENSE CURRENT OFFSET CURRENT

VS. AMBIENT TEMPERATURE

-80

-60

-40

-20

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Sense Current Offset Current IIS.offset[uA]

SENSE CURRENT LEAKAGE CURRENT VS.

AMBIENT TEMPERATURE

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Sense Current Leakage Current

IIS(LL) [uA]

Vcc=12V

Iin=0A

Data Sheet S18529EJ3V0DS00 19

PD166007

SENSE CURRENT UNDER FAULT CONDITION

VS. AMBIENT TEMPERATURE

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Sense Current under Fault Condition IIS.fault[mA]

Vcc-Vis=12V

Vcc-Vis=8V

SENSE CURRENT SATURATION CURRENT

VS. AMBIENT TEMPERATURE

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

Sense Current Saturation Current IIS.lim[mA]

Vis<VOUT-6V

ON STATE RESISTENCE VS. VCC - VIN VOLTAGE

0 5 10 15 20

VCC-VIN Voltage[V]

On State Resistance Ron[mΩ]

Tch=25degreeC

ON STATE RESISTANCE VS. AMBIENT TEMPERATURE

-50 0 50 100 150 200

Ambient Temperature Ta[degreeC]

On State Resistance Ron[mΩ]

SLEW RATE VS. AMBIENT TEMPERATURE

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

-50 0 50 100 150 200

Ambient Tempereture Ta[degreeC]

Slew rate dV/dt[V/us]

-dV/dtoff

dV/dton

Data Sheet S18529EJ3V0DS00

PD166007

THERMAL CHARACTERISTICS

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

0.1

100

1000

0.001 0.01 0.1 1 10 100 1000

Pulse width (s)

Transient Thermal Resistance Rth (degreeC/W

)

Rth(ch-a)=55.0degreeC/W

Rth(ch-c)=3.17degreeC/W

MAXIMUM ALLOWABLE LOAD INDUCTANCE FOR A SINGLE SWITCH OFF

INDUCTIVE LOAD SWITCH-OFF ENERGY DISSIPATION FOR A SINGLE PULSE

Maximum allowable load inductance for a single switch off

100

0.01 0.1 1 10

L[mH]

IAS[A

]

The energy dissipation for an inductive load switch-off single pulse in device (EAS1) is estimated by the following

formula as RL = 0 Ω.

⎟

⎠

⎞

⎜

⎝

⎛

−

⋅⋅=

VCCVon(CL)

Von(CL)

EAS1

<R>

Tch,start≤150degreeC, VCC=12V

Data Sheet S18529EJ3V0DS00 21

PD166007

TAPING INFORMATION

This is one type (E1) of direction of the device in the career tape.

Draw-out side

MARKING INFORMATION

This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position

aren't indicated.

66007

Pb-free plating marking

Internal administrative code

Lot code Note

Week code (2 digit number)

Year code (last 1 digit number)

Note Composition of the lot code

<R>

Data Sheet S18529EJ3V0DS00

PD166007

REVISION HISTORY

Revision Major changes since last version Page

1st edition Released 1st edition November 2006

Released 2nd edition April 2007

Revised ton, tr characteristics 3

Add dV/dton, -dV/dtoff characteristics 3

Add VON(OvL) characteristics 4

Add td(OC) characteristics 4

Add explanation device behavior at switching a inductive load 7

Add Short circuit protection Case 1-(b) 9

Add Short circuit protection Case 2-(b) 11

Add explanation device behavior at low voltage condition 13

Revised Measurement condition waveform 15

Revised application example in principle 16

2nd edition

Add maximum allowable load inductance for a single switch off 20

Released 3rd edition December 2008

Add description MSL to Features, revised Ordering information 1

Revised Block diagram 2

Revised Maximum allowable load inductance for a single switch off graph 20

3rd edition

Add Taping information, Marking information 21

Data Sheet S18529EJ3V0DS00 23

PD166007

VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the

CMOS device stays in the area between V

(MAX) and V

(MIN) due to noise, etc., the device may

malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,

and also in the transition period when the input level passes through the area between V

(MAX) and

(MIN).

HANDLING OF UNUSED INPUT PINS

Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is

possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS

devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed

high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to V

or GND

via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must

be judged separately for each device and according to related specifications governing the device.

PRECAUTION AGAINST ESD

A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as

much as possible, and quickly dissipate it when it has occurred. Environmental control must be

adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that

easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static

container, static shielding bag or conductive material. All test and measurement tools including work

benches and floors should be grounded. The operator should be grounded using a wrist strap.

Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for

PW boards with mounted semiconductor devices.

STATUS BEFORE INITIALIZATION

Power-on does not necessarily define the initial status of a MOS device. Immediately after the power

source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does

not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the

reset signal is received. A reset operation must be executed immediately after power-on for devices

with reset functions.

POWER ON/OFF SEQUENCE

In the case of a device that uses different power supplies for the internal operation and external

interface, as a rule, switch on the external power supply after switching on the internal power supply.

When switching the power supply off, as a rule, switch off the external power supply and then the

internal power supply. Use of the reverse power on/off sequences may result in the application of an

overvoltage to the internal elements of the device, causing malfunction and degradation of internal

elements due to the passage of an abnormal current.

The correct power on/off sequence must be judged separately for each device and according to related

specifications governing the device.

INPUT OF SIGNAL DURING POWER OFF STATE

Do not input signals or an I/O pull-up power supply while the device is not powered. The current

injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and

the abnormal current that passes in the device at this time may cause degradation of internal elements.

Input of signals during the power off state must be judged separately for each device and according to

related specifications governing the device.

NOTES FOR CMOS DEVICES

PD166007

The information in this document is current as of December, 2008. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC Electronics data

sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not

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representative for availability and additional information.

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(Note)

•

M8E 02. 11-1

(1)

(2)

"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its

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"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as

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"Standard":

"Special":

"Specific":