HOKURIKU
L
b
c
W
h
f
LWabcde f gh
PAT-530 50 30 DC - 4G 1.35 20.6 9.0 14.6 3.5 3.01.0 2.6 2.9 0.1 2.4
a
b
L
W
GND
a
d
e
g
LWabc h
SAT-530 50 30 DC - 4G 1.35 8.9 8.9 0.15 1.55 1.051.2
NSATA-520 50 20 DC - 2G 1.20
DC - 4G 1.35 8.65 6.7 0.8 1.8 1.050.9
h
Attenuators
IC Substrate for MicroWave
Item
Specifications
Substrates
Resitive Film
Electrode
Min.(Line/Space)
Features
99.5% Al
2
O
3
t=0.20, 0.25, 0.38, 0.635mm
Ta
2
N designed resistance 25, 50, 100㱅/䂔
NiCr-Au, Au thickness 1㨪5Ǵm by customer's request
r5Ǵm, The pattern form is custom-made
Bonding is applicable
c
䂓 Features
䊶㩷 Environmentally friendly, using Alminium Nitride (N Series)
䊶㩷 Non-cut resistance trimming for high frequency characteristic and stability (Thin film type)
䊶㩷 A variety of custom designs are available
䂓 Flange Type
䂓 SMD Type
Microwave Components
Type
Power Rating
㧔W㧕
Attenuation
㧔dB㧕
Frequency Characteristics
Freq.(Hz) VSWR
Dimensions (mm)
Type
Power Rating
㧔W㧕
Attenuation
㧔dB㧕
Frequency Characteristics
Freq.(Hz) VSWR
Dimensions (mm)
Details are subject to change without notice.
