AUIRGP65G40D0 AUIRGF65G40D0 AUTOMOTIVE GRADE ULTRAFAST IGBT WITH ULTRAFAST SOFT RECOVERY DIODE CooliRIGBT TM Features * * * * * * Designed And Qualified for Automotive Applications Ultra Fast Switching IGBT:70-200kHz Extremely Low Switching Losses Maximum Junction Temperature 175 C Square RBSOA Positive VCE (on) Temperature Coefficient C VCE(on) typ. = 1.8V IC@TC=100C = 41A G E Package Type AUIRG P65G40D0 AUIRG F65G40D0 TO -247AC TO -247AD CE G TO-247AD AUIRGF65G40D0 G C TO-247AC AUIRGP65G40D0 G G a te Base part number TJ max = 175C E n-channel Benefits * Optimized High Frequency Switching Applications * Rugged Transient Performance for Increased Reliability * Excellent Current Sharing in Parallel Operation Applications * DC-DC Converter * PFC VCES = 600V C C o lle c t o r E E m it t e r O rderable Part Number Standard Pack Form Quantity Tube 25 Tube 25 AUIRG P65G40D0 AUIRG F65G40D0 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter V CES IC @ TC = 25C IC @ TC = 100C INOMINAL ICM Collector-to-Emitter Voltage Continuous Collector Current h Continuous Collector Current h Nominal Current @ 200kHz i Units 600 V 62 41 A 20 ILM Pulse Collector Current Clamped Inductive Load Current IF @ TC = 25C Diode Continous Forward Current IF @ TC = 100C Diode Continous Forward Current Maximum Repetitive Forward Current IFRM Max. 84 c 112 46.1 30 d 112 V GE Gate-to-Emitter Voltage 20 PD @ TC = 25C Maximum Power Dissipation 625 PD @ TC = 100C Maximum Power Dissipation 313 TJ Operating Junction and TST G Storage Temperature Range Soldering Temperature for 10 sec. V W -55 to +175 C 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf*in (1.1 N*m) Thermal Resistance Parameter Min. Typ. Max. --- --- 0.24 --- --- 1.78 RJC (Diode) f Junction-to-Case-(each Diode) f RCS Case-to-Sink (flat, greased surface) --- 0.24 --- RJA Junction-to-Ambient (typical socket mount) --- --- 40 --- 6.0 (0.21) --- Junction-to-Case-(each IGBT) RJC (IGBT) Units C/W g (oz) *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units 600 -- -- V -- 0.18 -- V/C -- 1.4 -- IC = 12A, VGE = 15V, TJ = 25C -- 1.8 2.2 IC = 20A, VGE = 15V, TJ = 25C -- 1.9 -- -- 2.6 -- -- 2.2 -- -- 3.0 -- Gate Threshold Voltage 3.0 -- 5.5 VGE(th)/TJ Threshold Voltage temp. coefficient -- -12 -- gfe Forward Transconductance -- 36 -- S VCE = 50V, I C = 20A ICES Collector-to-Emitter Leakage Current -- 3.2 25 A VGE = 0V, VCE = 600V -- 0.81 -- mA VFM Diode Forward Voltage Drop -- 1.7 2.45 V IF = 20A -- 1.4 -- IGES Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CES/ TJ Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VCE(on) VGE(th) Conditions VGE = 0V, I C = 500A e VGE = 0V, I C = 1.0mA (25C-175C) IC = 12A, VGE = 15V, TJ = 150C V IC = 20A, VGE = 15V, TJ = 150C IC = 12A, VGE = 15V, TJ = 175C IC = 20A, VGE = 15V, TJ = 175C V VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 1.0mA (25C - 175C) VGE = 0V, VCE = 600V, TJ = 175C IF = 20A, TJ = 175C Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Min. Typ. Max. -- 180 270 Qge Gate-to-Emitter Charge (turn-on) -- 28 42 Qgc Gate-to-Collector Charge (turn-on) -- 64 96 Eon Turn-On Switching Loss -- 298 389 Eoff Turn-Off Switching Loss -- 147 234 Etotal Total Switching Loss -- 445 623 td(on) Turn-On delay time -- 35 53 tr Rise time -- 12 29 163 td(off) Turn-Off delay time -- 142 tf Fall time -- 15 32 Eon Turn-On Switching Loss -- 630 -- Eoff Turn-Off Switching Loss -- 137 -- Etotal Total Switching Loss -- 767 -- td(on) Turn-On delay time -- 33 -- tr Rise time -- 12 -- Units Conditions IC = 20A nC VGE = 15V VCC = 400V IC = 20A, VCC = 400V, VGE = 15V J RG = 4.7, L = 485H, TJ = 25C Energy losses include tail & diode reverse recovery IC = 20A, VCC = 400V, VGE = 15V ns RG = 4.7, L = 485H, TJ = 25C J RG = 4.7, L = 485H, TJ = 175C IC = 20A, VCC = 400V, VGE=15V Energy losses include tail & diode reverse recovery IC = 20A, VCC = 400V, VGE = 15V ns RG = 4.7, L = 485H td(off) Turn-Off delay time -- 165 -- tf Fall time -- 16 -- Cies Input Capacitance -- 4673 -- Coes Output Capacitance -- 337 -- VCC = 30V Cres Reverse Transfer Capacitance -- 58 -- f = 1.0Mhz Effective Output Capacitance (Time Related) -- 406 -- VGE = 0V, VCE = 0V to 480V -- 162 -- Coes eff. (ER) g Effective Output Capacitance (Energy Related) g RBSOA Reverse Bias Safe Operating Area FULL SQUARE trr Diode Reverse Recovery Time -- -- 70 -- Qrr Diode Reverse Recovery Charge -- 116 -- -- 580 -- -- 4.8 -- -- 7.2 -- Coes eff. TJ = 175C pF VGE = 0V TJ = 175C, IC = 80A VCC = 480V, Vp 600V Rg = 4.7, V GE = +20V to 0V Peak Reverse Recovery Current Irr 41 -- ns TJ = 25C nC TJ = 25C I F = 20A, VR = 200V, TJ = 125C di/dt = 200A/s I F = 20A, VR = 200V, TJ = 125C di/dt = 200A/s A TJ = 25C I F = 20A, VR = 200V, TJ = 125C di/dt = 200A/s Notes through are on page 13 2 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 100 For both: Duty cycle : 50% Tj = 175C Gate drive as specified 90 Load Current ( A ) 80 Tc = 80C 70 Square Wave: 60 VCC 50 Tc = 110C I 40 Diode as specified 30 1 10 100 f , Frequency ( kHz ) 70 700 60 600 50 500 40 400 Ptot (W) IC (A) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 30 300 20 200 10 100 0 0 25 50 75 100 125 150 175 25 T C (C) 125 150 175 1000 OPERATION IN THIS AREA LIMITED BY V CE (on) 100 1msec 100sec 100 10 IC (A) IC, Collector-to -Emitter Current (A) 100 Fig. 3 - Power Dissipation vs. Case Temperature 10msec 1 10 0.1 Tc = 25C Tj = 175C Single Pulse DC 1 0.01 1 10 100 1000 VCE, Collector-to-Emitter Voltage (V) Fig. 4 - Forward SOA TC = 25C; TJ 175C; VGE = 15V 3 75 T C (C) Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 50 www.irf.com (c) 2015 International Rectifier 10 100 1000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175C; VGE =20V Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 100 60 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V VGE = 6.5V VGE = 6.0V 80 60 ICE (A) 80 ICE (A) 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V VGE = 6.5V VGE = 6.0V 40 40 20 20 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 100 60 IC, Collector-to-Emitter Current (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V VGE = 7.0V VGE = 6.5V VGE = 6.0V 80 ICE (A) 10 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25C; tp = 30s 100 40 20 80 60 T J = 25C 40 T J = 175C 20 0 0 0 2 4 6 8 0 10 4 6 8 10 Fig. 9 - Typ. Transfer Characteristics VCE = 50V; tp = 30s Fig. 8 - Typ. IGBT Output Characteristics TJ = 175C; tp = 30s 10 10 8 8 VCE (V) ICE = 10A ICE = 20A 6 2 VGE, Gate-to-Emitter Voltage (V) VCE (V) VCE (V) 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40C; tp = 30s ICE = 40A 4 ICE = 10A ICE = 20A 6 ICE = 40A 4 2 2 0 0 5 10 15 20 5 10 Fig. 10 - Typical VCE vs. VGE TJ = 25C www.irf.com (c) 2015 International Rectifier 15 20 VGE (V) VGE (V) 4 6 Fig. 11 - Typical VCE vs. VGE TJ = 175C Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 1600 100 1400 T J = 25C 80 1200 T J =175C 40 EON 1000 Energy (J) IF (A) 60 800 600 EOFF 400 20 200 0 0 0.0 1.0 2.0 0 3.0 5 10 15 VF (V) 20 25 30 35 40 IC (A) Fig. 12 - Typ. Diode Forward Characteristics tp = 30s Fig. 13 - Typ. Energy Loss vs. IC TJ = 175C; L = 0.49mH; VCE = 400V, RG = 4.7; VGE = 15V 1800 1000 1600 100 1400 1200 tF Energy (J) Swiching Time (ns) tdOFF tdON EON 1000 800 EOFF 600 10 400 tR 200 0 1 0 10 20 30 40 0 50 20 40 IC (A) 100 120 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V 35 10000 30 tdOFF 25 1000 Eoes (J) Swiching Time (ns) 80 RG () Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L = 0.49mH; VCE = 400V, RG = 4.7; VGE = 15V tdON tF 100 20 15 10 tR 5 0 10 0 20 40 60 80 100 120 RG () Fig. 16 - Typ. Switching Time vs. RG TJ = 175C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V 5 60 www.irf.com (c) 2015 International Rectifier 0 100 200 300 400 500 600 700 Voltage (V) Fig. 17- Typ. Output Capacitance Stored Energy vs. VCE Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 16 Capacitance (pF) 10000 VGE, Gate-to-Emitter Voltage (V) 100000 Cies 1000 Coes 100 Cres 14 V CES = 400V 12 10 8 6 4 2 0 10 0 100 200 300 400 0 500 50 100 150 200 Q G, Total Gate Charge (nC) VCE (V) Fig. 18 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 19 - Typical Gate Charge vs. VGE ICE = 20A; L = 200H 50 45 IRR (A) 40 35 30 25 20 0 10 20 30 40 50 60 RG () Fig. 20 - Typ. Diode IRR vs. RG TJ = 175C 6 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 120 30 V = 200V R TJ = 25C _____ TJ = 125C ---------- 100 25 20 IRRM (A) 80 trr (ns) V = 200V R T = 25C _____ J TJ = 125C ---------- 60 40 IF = 40A IF = 20A 15 IF = 10A 10 IF = 40A IF = 20A 20 5 IF = 10A 0 0 100 1000 100 1000 diF /dt (A/s) diF /dt (A/s) Fig. 22 - Typical Recovery Current vs. dif/dt Fig. 21 - Typical Reverse Recovery vs. dif/dt 2000 1600 1400 VR = 200V T = 25C _____ J T = 125C ---------J V = 200V R TJ = 25C _____ IF = 40A IF = 20A TJ = 125C ---------- IF = 10A 1600 di(rec)M / dt (A/s) 1200 Qrr (nC) 1000 800 600 1200 IF = 40A IF = 20A IF = 10A 800 400 400 200 0 0 100 1000 diF /dt (A/s) Fig. 23 - Typical Stored Charge vs. dif/dt 7 www.irf.com (c) 2015 International Rectifier 100 1000 diF/dt (A/s) Fig. 24 - Typical di(rec)M/dt vs. dif/dt, Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 R1 R1 0.05 0.01 J 0.02 0.01 0.001 J 1 1E-005 R3 R3 C 2 1 2 3 3 4 i (sec) Ri (C/W) R4 R4 4 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R2 R2 0.00604 0.000009 0.05590 0.000119 0.10879 0.003033 0.07706 0.018527 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 R1 R1 0.05 J 0.02 0.01 0.01 J 1 R2 R2 R3 R3 C 2 1 2 3 3 Ci= i/Ri Ci i/Ri 1E-005 0.0001 4 0.04565 0.000043 0.60669 0.000490 0.65528 0.004983 0.38139 0.041994 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 4 i (sec) Ri (C/W) R4 R4 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 8 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 L L DUT 0 80 V + VCC - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC -5V VCC DUT / DRIVER DUT VCC Rg SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM VCC DUT Rg Fig.C.T.5 - Resistive Load Circuit 9 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 70 tf 70 T EST CUR R E NT tr 600 500 50 500 50 400 40 400 40 300 I C E (A) 60 V C E (V) V C E (V) 600 700 30 90% ICE 200 5% V CE 10% ICE 100 0 300 20 200 10 100 10% test current 20 -100 -0.2 -10 -0.1 0 0.1 0.2 0.3 10 5% V CE 0 Eon Loss Eoff -100 -0.2 30 90% test current 0 0 60 I CE (A) 700 -0.1 0 time(s) -10 0.1 0.2 0.3 time (s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175C using Fig. CT.4 3 trr IF tb ta 0 2 Q rr I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 di f /dt 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of t rr Fig. WF3 - Reverse Recovery Waveform and Definitions 10 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Part Number AUGP65G40D0 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number AUGF65G40D0 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level TO-247AC N/A TO-247AD N/A Machine Model ESD Class M4 (+/- 400V) AEC-Q101-002 Human Body Model Charged Device Model Class H3B (+/- 8000V) AEC-Q101-001 Class C5 (+/- 1000V) AEC-Q101-005 Yes RoHS Compliant Qualification standards can be found at International Rectifiers web site: http://www.irf.com Highest passing voltage. Notes: VCC = 80% (VCES), VGE = 20V, L = 485H, RG = 4.7, tested in production ILM 400A. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ of approximately 90C. Coes eff. is a fixed capacitance that gives the same charging time as C oes while VCE is rising from 0 to 80% VCES . Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES . Calculated continuous current based on maximum allowable junction temperature. Nominal current limit is suggested for 400V, 200kHz operation. Actual current rating varies with application and is subjected to Tj and SOA limits. 13 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order acknowledgment. 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Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 14 www.irf.com (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 AUIRGP/F65G40D0 Revision History Date 9/8/2015 15 www.irf.com Comments * Removed "short circuit rating on page 1 & 2. (c) 2015 International Rectifier Submit Datasheet Feedback September 8, 2015 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: AUIRGP65G40D0 AUIRGF65G40D0