PT4800FE000F - SHARP - Product.Network

1Sheet No.: D1-A02201EN

Date: November 30, 2007

©SHARP Corporation

PT4800FE000F

PT4800FE000F Opaque Resin, Medium Directivity Angle,

Thin Package Phototransistor

Notice The content of data sheet is subject to change without prior notice.

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP

devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

■Features

1. Side view detection thin package

2. Plastic mold with opaque resin lens

3. Peak sensitivity wavelength: 860 nm (TYP.)

4. Medium directivity angle (Δθ ±35° TYP.)

5. Lead free and RoHS directive compliant

■Agency Approvals/Compliance

1. Compliant with RoHS directive (2002/95/EC)

2. Content information about the six substances

specified in “Management Methods for Control of

Pollution Caused by Electronic Information Prod-

ucts Regulation” (popular name: China RoHS)

(Chinese: );

refer to page 7.

■Applications

1. Telecommunications equipment

2. Home Appliances

3. Office automation equipment

4. Audio visual equipment

Sheet No.: D1-A02201EN

PT4800FE000F

■External Dimensions

3.5

1.6

1.65

0.8

1.50

(φ0.8)

φ1.0 E.PIN

φ1.50 E.PIN

8°

8°8°

2° 2°

(R0.45)

1.6

2-C0-.5

0.8

3.0

0.5 MIN.

1.7

(2.54)

17.5 ±0.5

1.8

2 - 0.9

1.0

0.8

0.2 MAX.

Burr Resin

0.1 MAX.

0.7

0.3 MAX.

Burr Resin

8°

2°

0.1 MAX.

2-0.25+0.3

-0.1 2-0.45+0.3

-0.1

Emitter

Collector

No. Name

Pin Arrangement

Terminal connection

NOTES:

1. Units: mm

2. Unspecified tolerence: ±0.2 mm

3. ( ): Reference dimensions

4. Package: Black (visible light cut-off resin)

5. The thin burr thickness (0.05 mm MAX.) is not included in outline dimensions

6. Resin protrusion: 0.3 mm MAX.

7. However, the thin burr adhering to the lead is 1.8 mm MAX. from the resin.

0.3 MAX.

Burr Gate

Sheet No.: D1-A02201EN

PT4800FE000F

■Absolute Maximum Ratings

*1 3 s (MAX.) at 1.8 mm from resin edge.

■Electro-optical Characteristics

*1 Ee: Irradiance by CIE standard light source A (tungsten lamp)

■Collector Current Ranking

*1 Quantities and ratios of any one ranking in any one shipment are at the

discretion of Sharp.

Parameter Symbol Rating Unit

Collector-emitter voltage VCEO 35 V

Emitter-collector voltage VECO 6V

Collector current IC20 mA

Collector power dissipation PC75 mW

Operating temperature Topr -25 to +85 °C

Storage temperature Tstg -40 to +85 °C

Soldering temperature *1 Tsol 260 °C

Parameter Symbol Conditions *1 MIN. TYP. MAX. Unit

Collector current ICEe = 1 mW/cm2, VCE = 5 V 0.08 0.25 0.75 mA

Dark current ICEO Ee = 0, VCE = 20 V – – 100 nA

Collector-emitter saturation voltage VCE(sat) Ee = 10 mW/cm2, IC = 0.5 mA – – 0.4 V

Collector-emitter breakdown voltage BVCEO IC = 0.1 mA, Ee = 0 35 – – V

Emitter-collector breakdown voltage BVECO IE = 0.01 mA, Ee = 0 6 – – V

Peak sensitivity wavelength λp––860–nm

Response time (Rise) tr VCE = 2 V, IC = 2 mA,

RL = 100 Ω

–3.0 – µs

Response time (Fall) tf – 3.5 – µs

Half intensity angle θ– – ±35 – degrees

Rank Collector Current Ic (mA)

A 0.08 to 0.19

B 0.15 to 0.38

C 0.3 to 0.75

(Ta = 25°C)

Sheet No.: D1-A02201EN

PT4800FE000F

Fig. 1 Collector Power Dissipation vs.

Ambient Temperature

Fig. 2 Spectral Sensitivity (TYP.)

-25 0 25

Ambient temperature Ta (°C)

50 75 85100

Collector power dissipation Pc (mW)

400 500 600 700 800 900

Ta = 25°C

1000 1100

Wavelength λ (nm)

100

Relative sensitivity (%)

Fig. 3 Collector Dark Current vs.

Ambient Temperature

Fig. 4 Relative Collector Current vs.

Ambient Temperature

-6

-7

-8

Collector dark current I

CEO

(A)

= 20 V

-9

-10

0 25 50 75 100

Ambient temperature Ta (°C)

10 20 30 40 7050 60

160

VCE = 5 V

Ee = 1 mW/cm2

100

120

140

Relative collector current (%)

Ambient temperature Ta (°C)

Sheet No.: D1-A02201EN

PT4800FE000F

Fig. 5 Collector Current vs. Irradiance

Fig. 6 Collector Current vs.

Collector-Emitter Voltage

VCE = 5 V

Ta = 25°C

110

0.1

Collector current IC (mA)

Irradiance Ee (mW/cm2)

0246810 12 14

Collector-emitter voltage VCE (V)

0.2

0.4

0.6

0.8

1.0

1.2

Collector current IC (mA)

0.8 mW/cm2

1.0 mW/cm2

1.5 mW/cm2

2.0 mW/cm2

2.5 mW/cm2

Ee = 3 mW/cm2

0.6 mW/cm2

Ta = 25°C

Fig. 7 Response Time vs. Load Resistance

Fig. 8 Test Circuit for Response Time

0.1 10

100

Load resistance RL (kΩ)

Response time tr, tf (µs)

VCE = 2 V

IC = 2 mA

Ta = 25°C

Output

VCC RL

Input

tdts

90%

10%

Sheet No.: D1-A02201EN

PT4800FE000F

Fig. 9 Sensitivity vs. Axis

Fig. 10 Collector-to-Emitter Saturation

Voltage vs. Irradience

Relative sensitivity (%)

100

+30°

-20°

-30°

-40°

-50°

-60°

-70°

-80°

-90°

-10° 0° +10° +20°

(Ta = 25°C)

+40°

+50°

+60°

+70°

+80°

+90°

Angular displacement θ

Ta = 25°C

= 0.05 mA

0.1 mA

0.5 mA

1.0 mA

1.5 mA

2.0 mA

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

Collector-emitter-emitter saturation voltage V

(sat) (V)

10.1 10

Irradiance Ee

(

mW/cm

)

Fig. 11 Relative Output vs Distance

110

100

(Emitter: GL4800E0000F)

Distance between emitter and detector (mm)

Relative output (%)

Graph data is for reference only and is not guaranteed data.

Sheet No.: D1-A02201EN

PT4800FE000F

■Design Notes

1. This product is not designed to resist electromagnetic and ionized-particle radiation.

■Manufacturing Guidelines

●Soldering Instructions

1. Sharp does not recommend soldering this part using preheat or solder reflow methods. Leads on this part are

pre-coated with lead-free solder.

2. If hand soldering, use temperatures ≤260°C for ≤3 seconds.

3. When mounting this device, care should be taken to prevent any boundary exfoliation (pad lifting) between the

solder, the pad, and the circuit board.

4. Do not subject the package to excessive mechanical force during soldering as it may cause deformation or

defects in plated connections. Internal connections may be severed due to mechanical force placed on the pack-

age due to the PCB flexing during the soldering process.

●Cleaning Instructions

1. Confirm this device's resistance to process chemicals before use, as certain process chemicals may affect the

optical characteristics.

2. Solvent cleaning: Solvent temperature should be 45°C or below. Immersion time should be 3 minutes or less.

3. Ultrasonic cleaning: The effect upon devices varies due to cleaning bath size, ultrasonic power output, cleaning

time, PCB size and device mounting circumstances. Sharp recommends testing using actual production condi-

tions to confirm the harmlessness of the ultrasonic cleaning methods.

4. Recommended solvent materials: Ethyl alcohol, Methyl alcohol, and Isopropyl alcohol.

■Presence of ODCs (RoHS Compliance)

This product shall not contain the following materials, and they are not used in the production process for this product:

• Regulated substances: CFCs, Halon, Carbon tetrachloride, 1,1,1-Trichloroethane (Methylchloroform). Specific

brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.

This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).

• Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl

ethers (PBDE).

• Content information about the six substances specified in “Management Methods for Control of Pollution

Caused by Electronic Information Products Regulation” (Chinese: )

NOTE: ✓ indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement

as described in SJ/T 11363-2006 standard.

Category

Toxic and Hazdardous Substances

Lead (Pb) mercury (Hg) Cadmium (Cd) Hexavalent

chromiun (Cr6+)

Polybrominated

biphenyls (PBB)

Polybrominated

diphenyl ethers

(PBDE)

Photo Transistor ✓✓✓✓✓✓

Sheet No.: D1-A02201EN

PT4800FE000F

■Packing Specifications

1. Parts are packed in a plastic zipper bag, with 1000 pieces per bag.

2. Bags are secured in a box as shown in Figure 12.

3. Product mass: 0.07 g (approximately)

Fig. 12 Packing Composition

Inner packing

Plastic zipper bag

Product (1000 pcs)

NOTES:

1. Inner packing material : Plastic zipper bag (Polyethylene)

2. Quantity: 1000 pcs/bag

Cellophane tape

Model No., Quantity, and Lot No.

NOTES:

1. Outer material : Packing case (Corrugated cardboard),

Cushioning material (Urethane), Cellophane tape

2. Quantity: 5000 pcs/box

3. Regular packaged mass: Approximately 460 g

4. Indication: Model No., Quantity, and Lot No.

Outer packing

Plastic zipper bag with products (5 bags)

Packing case

Cushioning material (2 sheets)

■Important Notices

· The circuit application examples in this publication are

provided to explain representative applications of

SHARP devices and are not intended to guarantee any

circuit design or license any intellectual property rights.

SHARP takes no responsibility for any problems

related to any intellectual property right of a third party

resulting from the use of SHARP’s devices.

· Contact SHARP in order to obtain the latest device

specification sheets before using any SHARP device.

SHARP reserves the right to make changes in the

specifications, characteristics, data materials, struc-

ture, and other contents described herein at any time

without notice in order to improve design or reliability.

Manufacturing locations are also subject to change

without notice.

· Observe the following points when using any devices

in this publication. SHARP takes no responsibility for

damage caused by improper use of the devices which

does not meet the conditions and absolute maximum

ratings to be used specified in the relevant specification

sheet nor meet the following conditions:

(i) The devices in this publication are designed for use

in general electronic equipment designs such as:

--- Personal computers

--- Office automation equipment

--- Telecommunication equipment (terminal)

--- Test and measurement equipment

--- Industrial control

--- Audio visual equipment

--- Consumer electronics

(ii) Measures such as fail-safe function and redundant

design should be taken to ensure reliability and safety

when SHARP devices are used for or in connection

with equipment that requires higher reliabilty such as:

--- Transportation control and safety equipment

(i.e., aircraft, trains, automobiles, etc.)

--- Traffic signals

--- Gas leakage sensor breakers

--- Alarm equipment

--- Various safety devices, etc.

(iii) SHARP devices shall not be used for or in connec-

tion with equipment that requires an extremely high

level of reliability and safety such as:

--- Space applications

--- Telecommunication equipment (trunk lines)

--- Nuclear power control equipment

--- Medical and other life support equipment (e.g.

scuba)

· If the SHARP devices listed in this publication fall

within the scope of strategic products described in the

Foreign Exchange and Foreign Trade Law of Japan, it

is necessary to obtain approval to export such SHARP

devices.

· This publication is the proprietary product of SHARP

duced or transmitted in any form or by any means,

electronic or mechanical, for any purpose, in whole or

in part, without the express written permission of

SHARP. Express written permission is also required

before any use of this publication may be made by a

third party.

· Contact and consult with a SHARP representative if

there are any questions about the contents of this pub-

lication.

Sheet No.: D1-A02201EN

PT4800FE000F