IPI040N06N3G - Infineon Technologies

Id\Q IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

"%&$!"#™3 Power-Transistor

Features

P6? ABH>3 A53 C9693 1C9? >4A9E5B1>443 43 ,& ),

P G3 5<<5>C71C53 81A75GR9H"[Z#@A? 4D3 C ( & 

P.5AH<? F? >A5B9BC1>3 5R9H"[Z#

P' 3 81>>5<>? A=1<<5E5<

P E1<1>3 85A1C54

P* D1<9695413 3 ? A49>7C? $     )#6? AC1A75C1@@<93 1C9? >B

P)2 6A55@<1C9>7+ ? " ,3 ? =@<91>C

P" 1<? 75>6A5513 3 ? A49>7C? #         

Maximum ratings, 1CTV   S D><5BB? C85AF9B5B@53 96954

Parameter Symbol Conditions Unit

 ? >C9>D? DB4A19>3 DAA5>C I9T8   S *# 1( 6

T8    S 1(

)D<B544A19>3 DAA5>C

+# I9$\`X^Q T8   S +.(

 E1<1>3 855>5A7HB9>7<5@D<B5 E6H I9    R=H   ").- Y@

!1C5B? DA3 5E? <C175 V=H p*( J

)? F5A49BB9@1C9? > P_[_ T8   S )00 K

( @5A1C9>71>4BC? A175C5=@5A1CDA5 TVT^_S      S

#  3 <9=1C93 3 1C57? AH #' #           

*# DAA5>C9B<9=9C542 H2 ? >4F9A5F9C81>R_T@8   % / C853 89@9B12 <5C? 3 1AAH    

+#, 5569

DA5

,# 5E93 5? >  ==G  ==G  ==5@? GH)    +  F9C8 3 =

*? >5<1H5A  V =C893 ;3 ? @@5A1A516? A4A19>

3 ? >>53 C9? >)  9BE5AC93 1<9>BC9<<19A

Value

)#$ , -   1>4$  ,   

V9H .( J

R ,? >=1G, &   +&/ Y"

I91( 6

Product Summary

Type #)     '   '  ! #) #   '   '  ! #) )   '   '  !

Package E=%ID*.+%+ E=%ID*.*%+ E=%ID**(%+

Marking (+/C(.C (,(C(.C (,(C(.C

@A5E9? DB5>79>55A9>7

B1=@<53 ? 45B

?EE(,cC(.C

?E?(,cC(.C

?E7(,cC(.C

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

-85A=1<A5B9BC1>3 5:D>3 C9? >3 1B5 R_T@8 % % (&0 A'K

-85A=1<A5B9BC1>3 5 R_T@6 =9>9=1<6? ? C@A9>C    

:D>3 C9? >1=2 95>C  3 =U 3 ? ? <9>71A51,# % % ,(

Electrical characteristics, 1CTV   S D><5BB? C85AF9B5B@53 96954

Static characteristics

 A19>B? DA3 52 A51;4? F>E? <C175 V"7G#9HH V=H  .I9  = .( % % J

!1C5C8A5B8? <4E? <C175 V=H"_T# V9H4V=HI9   V  *+,

05A? 71C5E? <C1754A19>3 DAA5>C I9HH V9H   . V=H  . 

TV   S % (&) ) r6

V9H   . V=H  .

TV    S % )( )((

!1C5B? DA3 5<51;1753 DAA5>C I=HH V=H   . V9H  . % ) )(( Z6

 A19>B? DA3 5? >BC1C5A5B9BC1>3 5 R9H"[Z# V=H   . I9    % +&+ , Y"

V=H   . I9    

"HB9# % +&( +&/

!1C5A5B9BC1>3 5 R=% )&+ % "

I]MZ^O[ZP`O_MZOQ gR^

fV9Hf5*fI9fR9H"[Z#YMc

I9    .) )*) % H

Values

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

#>@DC3 1@13 9C1>3 5 CU^^ % 0((( ))((( \<

( DC@DC3 1@13 9C1>3 5 C[^^ % )/(( *+((

+ 5E5AB5CA1>B65A3 1@13 9C1>3 5 C]^^ % -0 0/

-DA>? >45<1HC9=5 tP"[Z# % +( % Z^

+ 9B5C9=5 t]% /( %

-DA>? 6645<1HC9=5 tP"[RR# % ,( %

1<<C9=5 tR% - %

!1C5 81A

5 81A13 C5A9BC93 B

!1C5C? B? DA3 53 81A75 QS^ % ,* % Z8

!1C5C? 4A19>3 81A75 QSP % 1 %

,F9C3 89>73 81A75 Q^b % */ %

!1C53 81A75C? C1< QS% 10 %

!1C5@<1C51DE? <C175 V\XM_QM` % -&+ % J

( DC@DC3 81A75 Q[^^ V99   .V=H  . % /1 % Z8

Reverse Diode

 9? 453 ? >C9>? DB6? AF1A43 DAA5>C IH% % 1( 6

 9? 45@D<B53 DAA5>C IH$\`X^Q % % +.(

 9? 456? AF1A4E? <C175 VH9 V=H  . I<    

TV   S % (&1/ )&* J

+ 5E5AB5A53 ? E5AHC9=5 t]] % )*- % Z^

+ 5E5AB5A53 ? E5AH3 81A75 Q]] % ))( % Z8

-#, 55697DA5  6? A71C53 81A75@1A1=5C5A4569>9C9? >

VG   .#<    

Pi<'Pt     V B

T8   S

Values

V=H  . V9H   . 

f  & " I

V99   . V=H   .

I9    R=   "

V99   . I9    

V=H  C?   .

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

1 Power dissipation 2 Drain current

P_[_4R"T8#I94R"T8V=H"  .

3 Safe operating area 4 Max. transient thermal impedance

I94R"V9HT8   S D4( Z_T@84R"t\#

@1A1=5C5At\@1A1=5C5AD4t\'T

 V B

  V B

   V B

 =B

  =B

102

101

100

10-1

103

102

101

100

10-1

VDS [V]

ID[A]

<9=9C542 H? >BC1C5

]Q^U^_MZOQ

B9>7<5@D<B5

(&()

(&(*

(&(-

(&)

(&*

(&-

100

10-1

10-2

10-3

10-4

10-5

100

10-1

10-2

tp[s]

ZthJC [K/W]

120

160

200

0 50 100 150 200

TC[°C]

Ptot [W]

100

0 50 100 150 200

TC[°C]

ID[A]

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

5 Typ. output characteristics 6 Typ. drain-source on resistance

I94R"V9HTV   S R9H"[Z#4R"I9TV   S

@1A1=5C5AV=H @1A1=5C5AV=H

7 Typ. transfer characteristics 8 Typ. forward transconductance

I94R"V=HJV9Hf5*fI9fR9H"[Z#YMc gR^4R"I9TV   S

@1A1=5C5ATV

  .

 .   .

 .

  .

 .

 .

  .

0 50 100 150

ID[A]

RDS(on) [m ]

  S

   S

160

240

320

0 2 4 6

VGS [V]

ID[A]

120

160

200

0 50 100 150

ID[A]

gfs [S]

  .

 .

  .

 .

  .

 .

 .

  .

160

240

320

012345

VDS [V]

ID[A]

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

R9H"[Z#4R"TVI9    V=H   . V=H"_T#4R"TVV=H4V9H

@1A1=5C5AI9

11 Typ. capacitances 12 Forward characteristics of reverse diode

C4R"V9HV=H  .f  & " I I<4R"VH9#

@1A1=5C5ATV

)(J

10!

-60 -20 20 60 100 140 180

Tj[°C]

RDS(on) [m ]

  V 

   V 

0.5

1.5

2.5

3.5

-60 -20 20 60 100 140 180

Tj[°C]

VGS(th) [V]

8U^^

8[^^

8]^^

104

103

102

101

0 20 40 60

VDS [V]

C[pF]

  S

   S

  S   

   S   

103

102

101

100

0 0.5 1 1.5 2

VSD [V]

IF[A]

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

13 Avalanche characteristics 14 Typ. gate charge

I6H4R"t6JR=H   "V=H4R"QSM_QI9    @D<B54

@1A1=5C5ATV"^_M]_# @1A1=5C5AV99

15 Drain-source breakdown voltage 16 Gate charge waveforms

V7G"9HH#4R"TVI9  =

  .

  .

  .

0 20 40 60 80 100

Qgate [nC]

VGS [V]

-60 -20 20 60 100 140 180

Tj[°C]

VBR(DSS) [V]

gate

S ^"_T#

S"_T#

S ^

S P

  S

   S

   S

100

1 10 100 1000

tAV [µs]

IAS [A]

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

PG-TO220-3

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

PG-TO262-3 (I²-Pak)

+ 5E   @175        

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

PG-TO263 (D²-Pak)

+ 5E   @175         

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IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

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including without limitation, warranties of non-infringement of intellectual property rights

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contact the nearest Infineon Technologies Office (www.infineon.com).

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Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

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the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

+ 5E   @175         

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