2SK1670 - Hitachi Semiconductor

2SK1670

Silicon N-Channel MOS FET

ADE-208-1311 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• Built-in fast recovery diode (trr = 90 ns)

• Suitable for motor control, switching regulator and DC – DC converter

Outline

TO-3PFM

1. Gate

2. Drain

3. Source

123

2SK1670

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 250 V

Gate to source voltage VGSS ±30 V

Drain current ID30 A

Drain peak current ID(pulse)*1120 A

Body to drain diode reverse drain current IDR 30 A

Channel dissipation Pch*260 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

2SK1670

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0

Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0

Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0

Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance RDS(on) — 0.075 0.095 ΩID = 15 A, VGS = 10 V *1

Forward transfer admittance |yfs|1220—S I

= 15 A, VDS = 10 V *1

Input capacitance Ciss — 3100 — pF VDS = 10 V, VGS = 0,

Output capacitance Coss — 1330 — pF f = 1 MHz

Reverse transfer capacitance Crss — 190 — pF

Turn-on delay time td(on) — 45 — ns ID = 15 A, VGS = 10 V,

Rise time tr— 170 — ns RL = 2 Ω

Turn-off delay time td(off) — 270 — ns

Fall time tf— 150 — ns

Body to drain diode forward

voltage VDF — 1.0 — V IF = 30 A, VGS = 0

Body to drain diode reverse

recovery time trr — 90 — ns IF = 30 A, VGS = 0,

diF/dt = 100 A/µs

Note 1. Pulse test

See characteristic curves of 2SK1669.

2SK1670

120

0 50 100 150

Case Temperature TC (°C)

Power vs. Temperature Derating

Channel Dissipation Pch (W)

1,000

100

0.1 10 100 1,000

Drain to Source Voltage VDS (V)

Drain Current ID (A)

Maximum Safe Operation Area

300

1 3 30 300

Ta = 25°C

10 µs

100 µs

DC Operation (T

= 25°C)

Operation in this area

is limited by R

DS (on)

1 ms

PW = 10 ms (1 Shot)

0.3

TPW

PDM

D = T

θch–c (t) = γS (t) · θch–c

θch–c = 2.08°C/W, TC = 25°C

Pulse Width PW (s)

Normalized Transient Thermal Impedance γS (t)

1.0

0.1

0.3

D = 1

10 µ

0.03

0.01 100 µ10 m 100 m 1 101 m

TC = 25°C

0.5

0.2

0.1

0.05

0.02

0.01

1 Shot Pulse

Normalized Transient Thermal Impedance vs. Pulse Width

2SK1670

Package Dimensions

0.66

15.6 ± 0.3 5.5 ± 0.3

3.2 ± 0.3

5.45 ± 0.5

4.0 ± 0.3

5.0 ± 0.3

2.7 ± 0.3

19.9 ± 0.3

21.0 ± 0.5

1.6

0.86

φ3.2

+ 0.4

– 0.2

2.6

0.86

5.45 ± 0.5

5.0 ± 0.3

+ 0.2

– 0.1

2.0 ± 0.3

0.9

+ 0.2

– 0.1

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

TO-3PFM

—

5.2 g

As of January, 2001

Unit: mm

2SK1670

Cautions

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Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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