Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Shottky barrier diode
RB706D-40
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Small mold type. (SMD3)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io mA
IFSM mA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
VF1- - 0.37 V IF=1mA
IR1--1μAV
R=10V
Ct1 - 2.0 - pF VR=1V , f=1MHz
Parameter Limits
Reverse voltage (repetitive peak) 45
Reverse voltage (DC) 40
Average rectified forward voltage (*1) 30
Forward current surge peak (60Hz・1cyc) (*1) 200
Junction temperature 125
Storage temperature 40 to 125
(*1) Rating of per diode : lo/2
Parameter
Reverse current
Capacitance between terminals
Forward voltage
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
1.35±0.1
3.2±0.1
φ1.05MIN
3.2±0.1
0.3±0.1
5.5±0.2
0～0.5
JEDEC :S0T-346
0.4
＋0.1
－0.06
2.9±0.2
2.8±0.2
1.9±0.2
1.6
＋0.2
－0.1
0.95 0.95
＋0.1
－0.05
各リードとも
同寸法
0～0.1
0.15
1.1±0.2
0.01
0.8±0.1
(2) (1)
(3)
0.3～0.6
1.1
0.2
0.1
Each lead has same dimension
ROHM : SMD3
JEITA : SC-59
week code
SMD3
1.0MIN.
0.8MIN.
2.4
0.95
1.9
1/3 2011.03 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB706D-40
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.001
0.01
0.1
1
10
100
1000
0102030
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm 1cyc
0
5
10
15
20
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
1 10 100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00 0.01 0.02 0.03 0.04 0.05
Sin(θ＝180)
D=1/2
DC
0
0.001
0.002
0.003
0102030
Sin(θ＝180)
DC
D=1/2
0.1
1
10
0102030
f=1MHz
250
260
270
280
290
300
AVE:267.4mV
Ta=25℃
IF=1mA
n=30pcs
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.083uA
Ta=25℃
VR=10V
n=30pcs
1
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
0
1
2
3
4
5
6
7
8
9
10
AVE:2.00pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
2/3 2011.03 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB706D-40
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
Per chip
DC
Sin(θ＝180)
D=1/2
0
0.02
0.04
0.06
0.08
0.1
0 25 50 75 100 125
Per chip
DC
Sin(θ＝180)
D=1/2
T Tj=125℃
D=t/T
tVR
Io
VR=20V
0A
0V
T Tj=125℃
D=t/T
tVR
Io
VR=20V
0A
0V
3/3 2011.03 - Rev.C
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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