phase-out
© 2006 IXYS All rights reserved
0604
1 - 2
Advanced Technical Information GWM 70-01P2
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
VDSS = 100 V
ID25 = 70 A
RDSon typ. = 11 mΩΩ
ΩΩ
Ω
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 100 V
VGS ±20 V
ID25 TC = 25°C 70 A
ID90 TC = 90°C 50 A
IF25 TC = 25°C (diode) 130 A
IF90 TC = 90°C (diode) 85 A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon on chip level at TVJ = 25°C 11 14 mΩ
VGS = 10 V; ID = 35 A TVJ = 125°C 24 mΩ
VGSth VDS = 20 V; ID = 1 mA 2 4 V
IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C 1 µA
TVJ = 125°C 0.1 mA
IGSS VGS = ±20 V; VDS = 0 V 0.2 µA
Qg110 nC
Qgs 18 nC
Qgd 44 nC
td(on) 35 ns
tr85 ns
td(off) 150 ns
tf70 ns
VF(diode) IF = 35 A; VGS= 0 V 0.8 1.25 V
trr (diode) IF = 75 A; -di/dt = 100 A/µs; VDS = 30 V80 ns
RthJC 0.85 K/W
RthJH with heat transfer paste 1.7 K/W
VGS= 10 V; VDS = 80 V; ID = 25 A
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10 Ω
IXYS reserves the right to change limits, test conditions and dimensions.
Power Pins
Gate Pins
L +
G1
S1
G2
S2
L -
G3
S3
G4
S4
G5
S5
G6
S6
L1
L2
L3
phase-out
© 2006 IXYS All rights reserved
0604
2 - 2
Advanced Technical Information GWM 70-01P2
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (L+, L-, L1, L2, L3)300 A
may be additionally limited by external connections
TVJ -40...+175 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min 1000 V~
FCMounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Rpin to chip 0.6 mΩ
CPcoupling capacity between shorted 160 pF
pins and mounting tab in the case
Weight typ. 25 g
Equivalent Circuits for Simulation
Thermal Response
junction - case (typ.)
C
th1
= 0.039 J/K; R
th1
= 0.28 K/W
C
th2
= 0.069 J/K; R
th2
= 0.57 K/W
Dimensions in mm (1 mm = 0.0394")
S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1
L3 L2 L1 L- L+
