DSA50C100QB Schottky Diode Gen VRRM = 100 V I FAV = 2x VF = 25 A 0.72 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA50C100QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline compatible with TO-247 RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C100QB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 100 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 100 V IR reverse current, drain current VR = 100 V TVJ = 25C 450 A VR = 100 V TVJ = 125C 5 mA TVJ = 25C 0.90 V 1.07 V 0.72 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 125 C TC = 155C rectangular 0.90 V T VJ = 175 C 25 A TVJ = 175 C 0.45 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 7.3 m 0.95 K/W K/W 0.25 TC = 25C 12 V f = 1 MHz 160 440 289 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031a DSA50C100QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 C -55 150 C 150 C 1) Weight 5 MD mounting torque FC mounting force with clip Product Marking Logo Part No. Assembly Line Assembly Code g 0.8 1.2 Nm 20 120 N Part number D S A 50 C 100 QB IXYS Zyyww = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) abcd Date Code Ordering Standard Part Number DSA50C100QB Similar Part DSA50C100HB DSA60C100PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA50C100QB Package TO-247AD (3) TO-220AB (3) * on die level Delivery Mode Tube Code No. 504033 Voltage class 100 100 T VJ = 175 C Schottky V 0 max threshold voltage 0.45 V R 0 max slope resistance * 4.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C100QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C100QB Schottky 70 10 60 1 150C 50 IF 40 [A] 30 1000 TVJ=175C 800 125C IR CT 600 0.1 100C [mA] 20 10 75C [pF] 400 0.01 TVJ = 150C 125C 25C 50C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TVJ = 25C 25C 200 0.0001 0 0 20 40 60 80 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 0 20 40 60 80 100 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 70 80 70 60 DC 60 50 d = 0.5 IF(AV) 50 P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 40 [A] 100 [W] 30 30 20 20 10 10 0 0 0 50 100 150 200 0 10 20 TC [C] 30 40 50 60 70 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1.0 0.8 0.6 ZthJC Single Pulse 0.4 Rthi [K/W] 0.026 0.172 0.227 0.435 0.09 [K/W] 0.2 0.0 0.0001 0.001 0.01 0.1 1 ti [s] 0.0005 0.011 0.072 0.34 1.5 Note: All curves are per diode 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a