Single Phase PSB 25 IdAV = 21 A
Rectifier Bridge VRRM= 800-1800 V
Features
•Package with 1/4“ fast-on terminals
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
•UL registered E 148688
Applications
•Supplies for DC power equipment
•Input rectifier for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with one screw
•Space and weight savings
•Improved temperature and power
cycling capability
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refer to a single diode unless otherwise stated
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Symbol Test Conditions Characteristic Value
IRVR = VRRM, TVJ = TVJM ≤ 0.3 mA
VR = VRRM, TVJ = 25°C ≤ 5 mA
VFIF = 150 A, TVJ = 25 °C ≤ 2.2 V
VTO For power-loss calculations only 0.85 V
rT 12 mΩ
RthJC per Diode; DC 8.2 K/W
per module 2.05 K/W
RthJK per Diode; DC 9.4 K/W
per module 2.35 K/W
dsCreeping distance on surface 12.7 mm
dACreeping distance in air 9.4 mm
aMax. allowable acceleration 50 m/s²
~
~
-
+
VRSM VRRM Type
VDSM VDRM
(V) (V)
800 800 PSB 25/08
1200 1200 PSB 25/12
1400 1400 PSB 25/14
1600 1600 PSB 25/16
1800 1800 PSB 25/18
Preliminary Data Sheet
POWERSEM GmbH, W alpersdorfer Str . 53
D - 91126 Schwabach, Germany, www.powersem.net
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol Test Conditions Maximum Ratings
IdAV TC = 85 °C, (per module) 17 A
IdAVM TC = 63 °C, (per module) 21 A
IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 380 A
VR = 0 t = 8.3 ms (60 Hz), sine 440 A
TVJ = TVJM t = 10 ms (50 Hz), sine 360 A
VR = 0 t = 8.3 ms (60 Hz), sine 400 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 725 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 800 A²s
TVJ = TVJM t = 10 ms (50 Hz), sine 650 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 650 A²s
TVJ -40... + 150 °C
TVJM 150 °C
Tstg -40... + 150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V∼
IISOL ≤ 1 mA t = 1 s 3000 V∼
MdMounting torque (M5) 2 ± 10 % Nm
(10-32 UNF) 18 ± 10 % lb.in.
Weight typ. 22 g
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach, Germany
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 www.powersem.net
11.5
0
5
10
15
20
25
30
IF
VF
A
V
T=150°C
T=25°C
Fig. 1 Forward current versus
voltage drop per diode
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
380 340
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
2 4 6 10
TVJ=45°C
TVJ=150°C
t [m s]
1
10
10
2
3
As
2
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
20
0
10
20
30
40
50
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
9.95
3.95
1.95
0.95
0. 45-0 .0 5 = RT HC A [K/W ]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSB 25
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current
at case temperature
50 100 150 200
0
10
20
30 DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dA V
[A]
0.01 0.1 110
2
4
6
8
10
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated
